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Surface Oxygen Injection in tin disulfide Nanosheets for Efficient CO_(2) Electroreduction to Formate and Syngas

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Nano-Micro Letters 2021年第11期13卷 441-451页

作者： Tao Chen Tong Liu Tao Ding Beibei Pang Lan Wang Xiaokang Liu Xinyi Shen Sicong Wang Dan Wu Dong Liu Linlin Cao Qiquan Luo Wei Zhang Wenkun Zhu Tao Yao National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029People’s Republic of China State Key Laboratory of Environmentally Friendly Energy Materials School of National Defense Science and TechnologySouthwest University of Science and TechnologyMianyang 621010People’s Republic of China Institutes of Physical Science and Information Technology Anhui UniversityHefei 230601People’s Republic of China School of Materials Sun Yat-Sen UniversityGuangzhou 510275People’s Republic of China

Surface chemistry modification represents a promising strategy to tailor the adsorption and activation of reaction intermediates for enhancing ***,we designed a surface oxygen-injection strategy to tune the electronic structure of SnS_(2) nanosheets,which showed effectively enhanced electrocatalytic activity and selectivity of CO_(2) reduction to formate and syngas(CO and H_(2)).The oxygen-injection SnS_(2) nanosheets exhibit a remarkable Faradaic efficiency of 91.6%for carbonaceous products with a current density of 24.1 mA cm^(−2) at−0.9 V vs RHE,including 83.2%for formate production and 16.5%for syngas with the CO/H_(2) ratio of 1:*** operando X-ray absorption spectroscopy,we unravel the in situ surface oxygen doping into the matrix during reaction,thereby optimizing the Sn local electronic *** synchrotron radiation infrared spectroscopy along with theoretical calculations further reveals that the surface oxygen doping facilitated the CO_(2) activation and enhanced the affinity for HCOO**** result demonstrates the potential strategy of surface oxygen injection for the rational design of advanced catalysts for CO_(2) electroreduction.

关键词： Oxygen injection tin disulfide CO_(2)electroreduction Formate Syngas

Single-and few-layer 2H-SnS_(2)and 4H-SnS_(2) nanosheets for high-performance photodetection

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Chinese Chemical Letters 2022年第5期33卷 2611-2616页

作者： Lin Wang Xinzhe Li Chengjie Pei Cong Wei Jie Dai Xiao Huang Hai Li Key Laboratory of Flexible Electronic(KLOFE)&Institute of Advanced Materials(IAM) Nanjing Tech UniversityNanjing 211816China

The properties of two-dimensional(2D)materials are highly dependent on their phase and *** phases exist in tin disulfide(SnS_(2)),resulting in promising electronic and optical ***,accurately identifying the phase and thickness of SnS_(2)nanosheets is prior to their optoelectronic ***,layered 2H-SnS_(2)and 4H-SnS_(2)crystals were grown by chemical vapor transportation and the crystalline phase of SnS_(2)was characterized by X-ray diffraction,ultralow frequency(ULF)Raman spectroscopy and high-resolution transmission electron ***-grown crystals were mechanically exfoliated to single-and few-layer nanosheets,which were investigated by optical microscopy,atomic force microscopy and ULF Raman *** the 2H-SnS_(2)and 4H-SnS_(2)nanosheets have similar optical contrast on SiO_(2)/Si substrates,their ULF Raman spectra obviously show different shear and breathing modes,which are highly dependent on their phases and ***,the SnS_(2)nanosheets have shown phase-dependent electrical *** 4H-SnS_(2)nanosheet shows a current on/off ratio of 2.58×10^(5) and excellent photosensitivity,which are much higher than those of the 2H-SnS_(2)*** work not only offers an accurate method for identifying single-and few-layer SnS_(2)nanosheets with different phases,but also paves the way for the application of SnS_(2)nanosheets in highperformance optoelectronic devices.

关键词： tin disulfide 2H and 4H phases Phase-dependent behavior Ultralow-frequency Raman spectroscopy Photodetection

Controlled growth and photoconductive properties of hexagonal SnS2 nanoflakes with mesa-shaped atomic steps

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Nano Research 2017年第4期10卷 1434-1447页

作者： Yi Hu Tao Chen Xiaoqi Wang Lianbo Ma Renpeng Chen Hongfei Zhu Xin Yuan Changzeng Yan Guoyin Zhu Hongling Lv Jia Liang Zhong Jin Jie Liu Key Laboratory of Mesoscopic Chemistry of MOE and Collaborative Innovation Center of Chemistry for Life Sciences School of Chemistry and Chemical Engineering Nanjing University Nanjing 210093 China Department of Chemistry Duke University Durham NC27708 USA

We demonstrated the controlled growth of two-dimensional （2D） hexagonal tin disulfide （SnS2） nanoflakes with stacked monolayer atomic steps. The morphology was similar to flat-topped and step-sided mesa plateaus or step pyramids. The SnS2 nanoflakes were grown on mica substrates via an atmospheric-pressure chemical vapor deposition process using tin monosulfide and sulfur powder as precursors. Atomic force microscopy （AFM）, electron microscopy, and Raman characterizations were performed to investigate the structural features, and a sequential layer-wise epitaxial growth mechanism was revealed. In addition, systematic Raman characterizations were performed on individual SnS2 nanoflakes with a wide range of thicknesses （1-100 nm）, indicating that the A1g peak intensity and Raman shifts were closely related to the thickness of the SnS2 nanoflakes. Moreover, photoconductive AFM was performed on the monolayer-stepped SnS2 nanoflakes, revealing that the flat surface and the edges of the SnS2 atomic steps had different electrical conductive properties and photoconductive behaviors. This is ascribed to the dangling bonds and defects at the atomic step edges, which caused a height difference of the Schottky barriers formed at the interfaces between the PtIr-coated AFM tip and the step edges or the flat surface of the SnS2 nanoflakes. The 2D SnS2 crystals with regular monolayer atomic steps and fast photoresponsivity are promising for novel applications in photodetectors and integrated optoelectronic circuits.

关键词： tin disulfide metal dichalcogenides two-dimensional materials atomic steps photoconductivity and light-sensing

Strongly coupled Te-SnS_(2)/MXene superstructure with self-autoadjustable function for fast and stable potassium ion storage

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Journal of Energy Chemistry 2021年第10期30卷 416-424,I0011页

作者： Hongyang Sun Yelong Zhang Xiaodan Xu Jianwen Zhou Fan Yang Hao Li Hao Chen Yucheng Chen Zheng Liu Zhenping Qiu Da Wang Lipo Ma Jiawei Wang Qingguang Zeng Zhangquan Peng School of Applied Physics and Materials Wuyi UniversityJiangmen 529020GuangdongChina Jiangmen Advanced Battery Material Engineering and Technology Research Center Jiangmen 529020GuangdongChina Laboratory of Advanced Spectro-Electrochemistry and Lithium-Ion Batteries Dalian National Laboratory for Clean EnergyDalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023LiaoningChina

Potassium-ion batteries(PIBs)are a promising candidate for next-generation electric energy storage applications because of the abundance and low cost of ***,the development of PIBs is limited by sluggish kinetics and huge volume expansion of anodes,leading to poor rate capability and cycling ***,an advanced superstructure anode,including Te-doped SnS_(2) nanosheets uniformly anchored on MXene surface(Te-SnS_(2)/MXene),is rationally designed for the first time to boost K^(+)storage *** with strong interface interaction and self-autoadjustable interlayer spacings,the Te-SnS_(2)/MXene can efficiently accelerate electron/ion transfer,accommodate volume expansion,inhibit crack formation,and improve pseudocapacitive contribution during ***,the novel Te-SnS_(2)/MXene anode delivers a high reversible capacity(343.2 mAh g^(-1) after 50 cycles at0.2 A g^(-1)),outstanding rate capability(186.4 mAh g^(-1) at 20 A g^(-1)),long cycle stability(165.8 mAh g^(-1)after 5000 cycles at 10 A g^(-1) with a low electrode swelling rate of only 15.4%),and reliable operation in flexible full *** present Te-SnS_(2)/MXene becomes among the best transition metal-based anode materials for PIBs reported to date.

关键词： tin disulfide MXene Tellurium doping Potassium-ion battery

Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition

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Nano Research 2017年第7期10卷 2386-2394页

作者： Gonglan Ye Yongji Gong Sidong Lei Yongmin He Bo Li Xiang Zhang Zehua Jin Liangliang Dong Jun Lou Robert Vajtai Wu Zhou Pulickel M. Ajayan Department of Materials Science & NanoEngineering Rice University Houston Texas 77005 USA Department of Chemistry Rice University Houston Texas 77005 USA Department of Applied Physics Rice University Houston Texas 77005 USA Materials Science & Technology Division Oak Ridge National Lab Oak Ridge TN 37831 USA School of Materials Science and Engineering Beihang University Beijing 100191 China

Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of -2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition （CVD） growth of atomic-layer SnS2 with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.

关键词： metal dichalcogenides tin disulfide two-dimensional materials chemical vapor deposition photodetector

Band-tailored van der Waals heterostructure for multilevel memory and artificial synapse

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InfoMat 2021年第8期3卷 917-928页

作者： Yanan Wang Yue Zheng Jing Gao Tengyu Jin Enlong Li Xu Lian Xuan Pan Cheng Han Huipeng Chen Wei Chen Department of Physics National University of SingaporeSingaporeSingapore SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhenChina Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityFuzhouChina National and Local United Engineering Lab of Flat Panel Display Technology Institute of Optoelectronic DisplayFuzhou UniversityFuzhouChina Department of Chemistry National University of SingaporeSingaporeSingapore National University of Singapore(Suzhou)Research Institute SuzhouChina

Two-dimensional(2D)van der Waals heterostructure(vdWH)-based floating gate devices show great potential for next-generation nonvolatile and multilevel data storage ***,high program voltage induced substantial energy consumption,which is one of the primary concerns,hinders their applications in lowenergy-consumption artificial synapses for neuromorphic *** this study,we demonstrate a three-terminal floating gate device based on the vdWH of tin disulfide(SnS2),hexagonal boron nitride(h-BN),and few-layer *** large electron affinity of SnS2 facilitates a significant reduction in the program voltage of the device by lowering the hole-injection barrier across *** floating gate device,as a nonvolatile multilevel electronic memory,exhibits large on/off current ratio(105),good retention(over 104 s),and robust endurance(over 1000 cycles).Moreover,it can function as an artificial synapse to emulate basic synaptic ***,low energy consumption down to7 picojoule(pJ)can be achieved owing to the small program *** linearity(<1)and conductance ratio(80)in long-term potentiation and depression(LTP/LTD)further contribute to the high pattern recognition accuracy(90%)in artificial neural network *** proposed device with attentive band engineering can promote the future development of energy-efficient memory and neuromorphic devices.

关键词： artificial synapse band engineering three-terminal floating gate memory tin disulfide van der Waals heterostructure

High-performance Top-gated Monolayer SnS2 Field-effect Transistors and Their Integrated Logic Circuits

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High-performance Top-gated Monolayer SnS2 Field-effect Trans...