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Time-domain and Frequency-domain Analyses of PETT Oscillation in Press Pack IGBTs

CSEE Journal of Power and Energy Systems 2023年第2期9卷 682-695页

作者： Jiayu Fan Xiang Cui Xinling Tang Cheng Peng Zhibin Zhao Xiangrui Meng Xuebao Li Zhong Chen State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electrical Power UniversityBeijing 102206China Power Semiconductor Devices Research Institute State Key Laboratory of Advanced Power Transmission TechnologyGlobal Energy Interconnection Research Institute Co.Ltd.Beijing 102209China Department of Electrical Engineering University of ArkansasFayettevilleAR 72701USA

Plasma extraction transit time(PETT)oscillation might appear in IGBT devices,which is harmful to the electromagnetic compatibility(EMC)of a renewable energy system.To eliminate this oscillation,its frequency-domain characteristics in wire-bonded IGBT devices have been extensively studied.However,the time-domain analysis of PETT oscillation,especially in Press Pack IGBT(PPI)devices,has not attracted enough attention yet.In this paper,PETT oscillations with multi-chips in PPI devices are systematically investigated by experiments.It is first reported there are multiple resonant oscillations at the tail period when multi-chips turn off.Oscillations overlap in the time domain waveforms,which lead PETT oscillation to be more serious in multi-chips.Then,PETT oscillation is divided into three different feedback states for the first time.For the IGBT chip in the PETT oscillation,its physical based model and behavior model are proposed,which further form the equivalent circuit as the two-port network.Moreover,it is indicated that only parallel resonances can lead to PETT oscillation,which is consistent with experiment results.

关键词： PETT oscillation press pack IGBTs timedomain analysis two-port network

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