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Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs

Chinese Physics B 2022年第9期31卷 397-403页

作者： Chen Wang Wenmo Lu Fengnan Li Qiaomei Luo Fei Ma State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong UniversityXi'an 710049China

Amorphous indium-gallium-zinc oxide(a-IGZO)thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor(TFT)***-situ x-ray photoelectron spectroscopy(XPS)illustrates that weakly bonded oxygen(O)atoms exist in a-IGZO thin films deposited at high O_(2) pressures,but these can be eliminated by vacuum *** threshold voltage(V_(th))of the a-IGZO TFTs is shifted under positive gate bias,and the Vth shift is positively related to the deposition pressure.A temperature variation experiment in the range of 20 K-300 K demonstrates that an activation energy of 144 meV is required for the Vth shift,which is close to the activation energy required for the migration of weakly bonded O atoms in a-IGZO thin ***,the Vth shift is attributed to the acceptor-like states induced by the accumulation of weakly bonded O atoms at the a-IGZO/SiO_(2) interface under positive gate *** results provide an insight into the mechanism responsible for the Vth shift of the a-IGZO TFTs and help in the production of reliable designs.

关键词： a-IGZO thin films weakly bonded O atoms threshold voltage shift

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Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET

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Chinese Physics B 2005年第3期14卷 565-570页

作者：郑中山刘忠立张国强李宁范楷张恩霞易万兵陈猛王曦 MicroelectronicsR&DCenter InstituteofSemiconductorsChineseAcademyofSciencesBeijing100083China MicroelectronicsR&DCenter InstituteofSemiconductorsChineseAcademyofSciencesBeijing100083China//DepartmentofPhysicsJinanUniversityJinan250022China ShanghaiInstituteofMicrosystemandInformationTechnology ChineseAcademyofSciencesShanghai200050China

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8×1015, 2×1016 and 1×1017cm?2) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5×105rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8×1015cm?2 is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2×1016 and 1×1017cm?2, for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

关键词： SOIPMOSFET radiation hardness nitrogen implantation threshold voltage shift

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Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process

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Chinese Physics B 2023年第12期32卷 628-635页

作者：巩伟泰李闫孙亚宾石艳玲李小进 Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering East China Normal UniversityShanghai 200241China

Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing gate oxide defects(ΔV_(HT)),and the generation of gate oxide defects(ΔV_(OT)).In this work,the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate(HKMG)process is thoroughly *** experimental results show that the degradation is enhanced at a larger stress bias and higher *** effects of the three underlying subcomponents are evaluated by using the comprehensive *** is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI ***,the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are *** dependence of operating lifetime on stress bias and temperature is also *** is observed that NBTI lifetime significantly decreases as the stress ***,the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.

关键词： negative bias temperature instability(NBTI) high-k metal gate(HKMG) threshold voltage shift interface trap gate oxide defect

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