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Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

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Chinese Physics B 2012年第12期21卷 403-407页

作者：林志宇张进成周昊李小刚孟凡娜张琳霞艾姗许晟瑞赵一郝跃 Key Laboratory of Wide Band-Gap Semiconductor Technology School of MicroelectronicsXidian University

In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

关键词： GaN A1N buffer layer metal-organic chemical vapour deposition threading dislocations

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Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

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Chinese Physics B 2023年第2期32卷 399-404页

作者：王闯高晓冬李迪迪陈晶晶陈家凡董晓鸣王晓丹黄俊曾雄辉徐科 School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou 215009China Shenyang National Laboratory for Materials Science Jiangsu Institute of Advanced SemiconductorsSuzhou 215000China Suzhou Nanowin Science and Technology Co. LtdSuzhou 215123China

A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. threading dislocations(TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.

关键词： hydride vapor phase epitaxy(HVPE) AlN threading dislocations nano-patterned sapphire substrate

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Mosaic Structure Evolution in GaN Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

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Chinese Physics Letters 2006年第5期23卷 1257-1260页

作者：陈志涛徐科郭立平杨志坚潘尧波苏月永张酣沈波张国义 School of Physics Peking University Beijing 100871 State Key Laboratory for Artificial Microstructure and Mesoscopic Physics Peking University Beijing 100871 Research Center for Wide-band Semiconductors Peking University Beijing 100871 Beijing Synchrotron Radiation Facility Institute of High Energy Physics Chinese Academy of Sciences Beijing 100049

We investigate mosaic structure evolution of GaN films annealed for a long time at 800℃ grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations （TDs） instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction （GIXRD） also support the proposed structure evolution.

关键词： threading dislocations DEFECT STRUCTURE EPITAXIAL GAN THIN-FILMS

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