检索结果-南通市图书馆

Highly efficient solution-processed CZTSSe solar cells based on a convenient sodium-incorporated post-treatment method

引用

Journal of Energy Chemistry 2020年第1期29卷 196-203,I0007页

作者： Biwen Duan Linbao Guo Qing Yu Jiangjian Shi Huijue Wu Yanhong Luo Dongmei Li Sixin Wu Zhi Zheng Qingbo Meng Key Laboratory for Renewable Energy(CAS) Beijing Key Laboratory for New Energy Materials and DevicesInstitute of PhysicsChinese Academy of SciencesBeijing 100190China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China Songshan Lake Materials Laboratory Dongguan 523808GuangdongChina Key Laboratory for Special Functional Materials of MOE Henan UniversityKaifeng 475004HenanChina Key Laboratory for Miao-Nano Energy Storage and Conversion Materials of Henan Province College of Advanced Materials and EnergyInstitute of Surface Micro and NanomaterialsXuchang UniversityXuchang 461000HenanChina

In CZTSSe solar cells,a simple sodium-incorporation post-treatment method toward solution-processed Cu2Zn Sn S4precursor films is presented in this *** ultrathin NaCl film is deposited on Cu2Zn Sn S4precursor films by spin-coating NaCl *** subsequent selenization process,the introduction of Na Cl is found to be benefacial for the formation of Cu2-xSe,which can further facilitate the element transportation,leading to dense and smooth CZTSSe films with large grains and less impurity Cu2Sn(S,Se)*** depth profiles confirm the gradient distribution of the sodium element in Na-doped *** spectra show that the introduction of appropriate sodium into the absorber can inhibit the band tail *** high as 11.18% of power conversion efficiency(PCE)is achieved for the device treated with 5 mg mL^-1 NaCl solution,and an average efficiency of Na-doped devices is 10.71%,13%higher than that of the control groups(9.45%).Besides,the depletion width and the charge recombination lifetime can also have regular variation with sodium *** work offers an easy modification method for high-quality Na-doped CZTSSe films and high-performance devices,in the meantime,it can also help to further understand the effects of sodium in CZTSSe solar cells.

关键词： thin film solar cell CZTSSe Sodium doping Post-treatment Spin-coating method

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Lithium-assisted synergistic engineering of charge transport both in GBs and GI for Ag-substituted Cu2ZnSn(S,Se)4 solar cells

引用

Journal of Energy Chemistry 2020年第11期29卷 9-15页

作者： Xiangyun Zhao Xiaohuan Chang Dongxing Kou Wenhui Zhou Zhengji Zhou Qingwen Tian Shengjie Yuan Yafang Qi Sixin Wu The authors contributed equally to this work Key Lab for Special Functional MaterialsMinistry of EducationNational&Local Joint Engineering Research Center for High-Efficiency Display and Lighting TechnologySchool of Materials Science and EngineeringCollaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004HenanChina

Although silver(Ag) substitution offers several benefits in eliminating bulk defects and facilitating interface type inversion for Cu2ZnSn(S,Se)4(CZTSSe) photovoltaic(PV) technology, its further development is still hindered by the fairly low electrical conductivity due to the significant decrease of acceptors *** this work, a versatile Li–Ag co-doping strategy is demonstrated to mitigate the poor electrical conductivity arising from Ag through direct incorporating Li via postdeposition treatment(PDT) on top of the Ag-substituted CZTSSe absorber. Depth characterizations demonstrate that Li incorporation increases ptype carrier concentration, improves the carrier collection within the bulk, reduces the defects energy level as well as inverts the electric field polarity at grain boundaries(GBs) for Ag-substituted CZTSSe system. Benefiting from this lithium-assisted complex engineering of electrical performance both in grain interior(GI) and GBs, the power conversion efficiency(PCE) is finally increased from 9.21% to 10.29%. This systematic study represents an effective way to overcome the challenges encountered in Ag substitution,and these findings support a new aspect that the synergistic effects of double cation dopant will further pave the way for the development of high efficiency kesterite PV technology.

关键词： Cu2ZnSn(S,Se)4 thin film solar cell Ag substitution Alkali doping Post-treatment

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Synthesis of the CuInSe_2 thin film for solar cells using the electrodeposition technique and Taguchi method

引用

International Journal of Minerals,Metallurgy and Materials 2009年第1期16卷 101-107页

作者： Wei-long Liu Shu-huei Hsieh Wen-jauh Chen Pei-i Wei Jing-herng Lee Department of Materials Science and Engineering Huwei Institute of Technology Yunlin China Taipei Graduate Institute of Materials Science Yunlin University of Science and Technology Yunlin China Taipei

The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature, current density, CuCl2 concentration, FeCl3 concentration, H2SeO3 concentration, TEA amount, pH value, and deposition time. The experiments were carried out according to an L18（2^13^7） table An X-ray diffractometer （XRD） and a scanning electron microscope （SEM） were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment. The results showed that the CuInSe2 phase was deposited with a preferred plane （112） parallel to the substrate surface. The optimum parameters are as follows： current density, 7 mA/cm^2; CuCl2 concentration, 10 mM; FeCl3 concentration, 50 mM; H2SeO3 concentration, 15 mM; TEA amount, 0 mL; pH value, 1.65; deposition time, 10 min; and annealing temperature, 500℃.

关键词： CuInSe2 (CIS) thin film solar cell electrodeposition Taguchi method

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Impact of oxygen incorporation on interface optimization and defect suppression for efficiency enhancement in Cu_(2)ZnSn(S,Se)_(4)solar cells

引用

Journal of Energy Chemistry 2024年第8期95卷 77-85,I0003页

作者： Shicheng Deng Songfan Wang Yuanyuan Wang Qian Xiao Yuena Meng Dongxing Kou Wenhui Zhou Zhengji Zhou Zhi Zheng Sixin Wu Key Laboratory for Special Functional Materials of MOE National&Local Joint Engineering Research Centre for High-efficiency Display and Lighting TechnologySchool of MaterialsHenan UniversityKaifeng 475004HenanChina Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province Institute of Surface Micro and Nano MaterialsCollege of Chemical and Materials EngineeringXuchang UniversityXuchang 461000HenanChina

Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from severe carrier recombination,limiting the photovoltaic *** energy band alignment at the p-n junction and defective front interface are two main ***,oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the *** optimized oxygen incorporation conditions,the carrier separation and collection behavior at the front interface of the device is *** particular,it is found that oxygen incorporated absorber exhibits increased band bending,larger depletion region width,and suppressed absorber *** indicate the dynamic factors for carrier separation become ***,the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier *** a consequence,the champion efficiency of CZTSSe solar cells has been improved from 9.74%to 12.04%with significantly improved open-circuit voltage after optimized air-annealing *** work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.

关键词： Kesterite thin film solar cell Interface optimization Surface oxidation Defect suppression

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Effects of Sn Concentration in Indium Tin Oxide Back Contacts on the Device Performance of Cu(In1-xGax)Se2 thin film solar cells

Effects of Sn Concentration in Indium Tin Oxide Back Contact...

引用

第十五届国际光伏科学与工程大会

作者： Naoomi Yamada Tsukasa Tatejima Hiroki Ishizaki Tokio Nakada Department of Electrical Engineering and Electronics Aoyama Gakuin University 5-10-1 Fuchinobe Sagamihara Kanagawa 229-8558 Japan

Cu(InGa)Se (CIGS)-based thin film solar cells have been fabricated using indium tin oxide (ITO) back contacts. The device performance was affected by Sn/In atomic ratio in ITO back contact. In particular, V and FF were improved by an increase in Sn/In atomic ratio. The morphology and grain size of the back contacts depended on the Sn/In atomic ratio. These results indicate that the device performance was enhanced with a decrease in grain size and a modification on morphology of ITO back contacts. The improvements of V and FF should be attributed to the increase in Na content in the CIGS layers, because the rate of the Na diffusion through ITO films into CIGS layers is affected by the microstructure of ITO back contacs.

关键词： Cu(In1-xGax)Se2 thin film solar cell Transparent Conductive Oxide Back Contacts Indium Tin Oxide

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

Progress of photovoltaic technology in China

引用

Engineering Sciences 2009年第2期7卷 72-79页

作者： Zhao Yuwen Wang Sicheng Zhao Ying Beijing solar Energy Researe~h Institute Beijing 100053 China Energy Research Institute National Development and Reform Commission Beijing 100038 China The Institute of Photoelectronic thin film Devices and Technology Nankai University Tianjin 300071 China

Chinese government has been devoting itself to the development of renewable energy sources. This paper describes the history, achievement and future trends of photovoltaie technology, and suggestions axe proposed for ... 详细信息

关键词： photovoltaic technology renewable energy crystalline silicon solar cell thin film solar cell new type solar cell

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Potential of nanocrystalline germanium for solar cells with long operating wavelengths

Potential of nanocrystalline germanium for solar cells with ...

引用

第四届新型太阳能电池学术研讨会

作者： Chang Li Jian Ni Xiaoxiang Sun Xinyu Wang Zhenglong Li Hongkun Cai Juan Li Jianjun Zhang College of Electronic Information and Optical Engineering Nankai University

To absorb the infrared part of the solar spectrum more efficiently, narrow bandgap hydrogenated nanocrystalline germanium(nc-Ge:H) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition at a low temperature of 180 ℃.While the incubation layer of the nc-Ge:H was reduced to less than 5 nm by using the ultra-high hydrogen dilution, the negative photoconductivity behavior was still observed as the thickness of nc-Ge:H up to 30 ***, as the best candidate for solar cells application, the nc-Ge:H(20 nm)/nc-Si:H(10 nm) periodic multilayer structure was prepared and used as the absorption layer of nc-Ge:H nip solar *** importantly, the spectral sensitivities extending into the wavelength of 1450 nm was achieved in the nc-Ge:H nip solar *** addition, the annealing for the nc-Ge:H nip solar cells was carried *** the overall short circuit current density of device is improved after 500 ℃ annealing, the spectral sensitivities in the infrared region is decreased due to the the coalescence of Ge crystallites.

关键词： thin film solar cell hydrogenated nanocrystalline germanium Negative photoconductivity Long wavelength

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

Systematic efficiency improvement for Cu2ZnSn(S,Se)4 solar cells by double cation incorporation with Cd and Ge

Systematic efficiency improvement for Cu2ZnSn(S,Se)4 solar c...

引用

第八届新型太阳能材料科学与技术学术研讨会

作者： Mingrui He Jialiang Huang Jianjun Li Xiaojing Hao School of Photovoltaic and Renewable Energy Engineering University of New South WalesNew South Wales

The performance of kesterite Cu2 ZnSn(S,Se)4(CZTSSe) solar cell is known to be severely limited by the nonradiative recombination near the heterojunction interface and within the bulk of the CZTSSe absorber resulting from abundant recombination centers and limited carrier collection efficiency. Herein, we simultaneously reduce nonradiative recombination by incorporating small amounts of Ge and Cd into the CZTSSe absorber. Incorporation of Ge effectively increases the p-type doping, thus successfully improving the bulk conductance and reducing the recombination in the CZTSSe bulk via enhanced quasiFermi level splitting, whilst incorporation of Cd greatly reduces defects near the junction region, enabling larger depletion region width and better carrier collection efficiency. The combined effects of Cd and Ge incorporation give rise to systematic improvement in opencircuit voltage(V), short-circuit current density(J) and fill factor(FF), enabling a high conversion efficiency of 11.6%. This work highlights the multiple cation incorporation strategy for systematically manipulating the opto-electronic properties of kesterite materials, which may be also applicable to other semiconductors.

关键词： CZTSSe thin film solar cell non-radiative recombination carrier collection multiple cations incorporation

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：