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thermal expansion coefficients of Thin Crystal Films

Communications in Theoretical Physics 2005年第5X期44卷 921-924页

作者： HUANG Jian-Ping WU Xue-Zhong LI Sheng-Yi Mechatronics Engineering Institute National University of Defense Science and Technology Changsha 410073 China

The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

关键词： thermal expansion coefficients thin crystal film Green's function perturbation theory

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Temperature-dependent Raman spectroscopy studies of 1-5-layer WSe2

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Nano Research 2020年第2期13卷 591-595页

作者： Zhonglin Li Yingying Wang Jie Jiang Yao Liang Bo Zhong Hong Zhang Kai Yu Guangfeng Kan Mingqiang Zou Department of Optoelectronic Science Harbin Institute of Technology at WeihaiWeihai 264209China School of Marine Science and Techmology Harbin Institute of Technology at WeihaiWeihai 264209China School of Materials Science and Engineering Dalian Jiaotong University Dalian 116028China School of Materials Science and Engineering Harbin Institute of Technology at WeihaiWeihai 264209China Chinese Academy of Inspection and Quarantine(CAIQ) No.A3Gaobeidian RoadChaoyang DistrictBeijing 100123China

In this work,Raman measurements of 1-5-layer WSe2 supported on SiO2/Si in the temperature range of 133 to 533 K are reported.A physical model including both volume effect and temperature effect is used to quantitatively understand the nonlinear temperature dependence of E2g^1Raman *** is found this nonlinear dependence of Raman mode mainly originates from thermal expansion effect and three-phonon *** former effect increases with an increase in number of layers,which is inverse for the latter *** temperature-dependent thermal expansion coefficients of 1-5-layer WSe2 are also obtained from Raman *** full width at half maximum(FWHM)of E;g mode is also systematically studied both experimentally and theoretically in the temperature range of 133 to 413 *** is found that the increase in FWHM of E2g^1 mode originates from decaying of E2g^1 *** work will promote the understanding of anharmonic behaviors of phonons in WSe2 flakes with different thicknesses.

关键词： WSe2 thermal expansion coefficients temperature-dependent Raman spectroscopy

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