检索结果-南通市图书馆

Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

Journal of Semiconductors 2010年第8期31卷 78-83页

作者：李劲刘红侠李斌曹磊袁博 Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian University

For the first time,a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator（DMG SSOI） MOSFETs is *** investigate the improved short channel effect（SCE）,hot carrier effect（HCE）,drain-induced barrier-lowering（DIBL） and carrier transport efficiency for the novel structure *** analytical model takes into account the effects of different metal gate lengths,work functions,the drain bias and Ge mole fraction in the relaxed SiGe *** surface potential in the channel region exhibits a step potential,which can suppress SCE,HCE and ***,strained-Si and SOI structure can improve the carrier transport efficiency,with strained-Si being particularly ***, the threshold voltage model correctly predicts a＂rollup＂in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe *** validity of the two-dimensional analytical model is verified using numerical simulations.

关键词： SOI MOSFETs strained-Si dual-material gate short channel effect hot carrier effect the drain-induced barrier-lowering two-dimensional model

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs

引用

Journal of Semiconductors 2011年第4期32卷 70-76页

作者：李劲刘红侠袁博曹磊李斌 Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian University School of Information and Electrical Engineering Hunan University of Science and Technology

On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical *** offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.

关键词： dual material gate double-gate MOSFET strained-Si short-channel effect the drain-induced barrier-lowering

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：