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Evaluation of the passivation effect and the first-principles calculation on surface termination of germanium detector

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Nuclear Science and Techniques 2021年第9期32卷 40-51页

作者： Sha-Sha Lv Yuan-Yuan Liu Wei-You Tang Li He Xiu-Xia Li Jian-Ping Cheng Key Laboratory of Beam Technology of Ministry of Education College of Nuclear Science and TechnologyBeijing Normal UniversityBeijing 100875China Department of Engineering Physics Tsinghua UniversityBeijing 100084China Joint Research Center Nuctech Company LimitedBeijing 100084China

The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event ***,the performance of HPGe must be further improved to achieve superior energy resolution,low noise,and long-term *** this study,we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of *** surface passivation effect is calculated and inferred from the band structure and density of interface states,and further con-firmed by the minority carrier *** first-principles method based on the density functional theory was adopted to systematically study the lattice structure,band structure,and density of state(DOS)of four different systems:Ge–H,Ge–Ge-NH 2,Ge-OH,and Ge-SiO_(x).The electronic char-acteristics of the Ge(100)unit cell with different passi-vation groups and Si/O atomic ratios were *** shows that H,N,and O atoms can effectively reduce the surface DOS of the Ge *** passivation effect of the SiO_(x) group varied with increasing O atoms and Si/O atomic ***,SiO and SiO_(2) passivation films were fabricated by electron beam evaporation on a Ge substrate,and the valence state of Si and resistivity was measured to characterize the *** minority carrier lifetime of Ge-SiO_(2) is 21.3 ls,which is approximately quadruple that of *** passivation effect and mechanism are discussed in terms of hopping conduction and surface defect *** study builds a relationship between the passivation effect and different termination groups,and provides technical support for the potential passivation layer,which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.

关键词： Germanium detector Passivation surface termination

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The Role of surface termination in Halide Perovskite for Efficient Photocatalytic Synthesis

The Role of Surface Termination in Halide Perovskite for Eff...

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第七届新型太阳能电池材料科学与技术学术研讨会

作者： Qi Chen Yuanyuan Dong Yujing Li

Halide perovskites have received extensive attention in the field of photocatalysis owing to their excellent optoelectronic ***,the semiconductor properties of halide perovskite surface and the influences on the photocatalytic performances have not been systematically *** we employ the conversion of triose(e.g.1,3-dihydroxyacetone(DHA)) as a model reaction to explore the surface termination of *** rational design of the surface termination for MAPbI,we substantially improve the production rate of butyl lactate to 7719 μg/g cat./h under visible light *** reveals that MAI-terminated MAPbI surface governs the photocatalytic ***,MAI-terminated surface is susceptible to iodide oxidation,which thus promotes the exposure of Pb(II) as active sites for this photocatalysis ***,MAI-termination induces p-doping effect near the surface for MAPbI,which facilitates the carrier transport and thus *** understanding of the surface termination in MAPbI photocatalyst suggests a new avenue to engineer halide perovskite semiconductor materials for future photocatalysis.

关键词： halide perovskite surface termination iodine vacancies photocatalysis triose

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Cs-content-dependent organic cation exchange in FA1-xCsxPbI3 perovskite

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Journal of Energy Chemistry 2022年第9期31卷 539-544,I0015页

作者： Meng Ren Jielin Shi Yuetian Chen Yanfeng Miao Yixin Zhao School of Environmental Science and Engineering Shanghai Jiao Tong UniversityShanghai 200240China

FA-Cs mixed-cation perovskite has been reported as a promising candidate for obtaining highly efficient and stable photovoltaic *** iodide(PEAI)post-treatment is a widely used and effective method for surface passivation of FA-Cs perovskite layer in ***,it is still controversial whether the PEAI post-treatment would form two-dimensional(2D)perovskite PEA_(2)PbI_(4) capping layer or just result in PEA+terminated *** in this work,the function of PEAI post-treatment on FA-Cs mixed-cation perovskite FA_(1-x)Cs_(x)PbI_(3)(x=0.1–0.9)with varied Cs contents is *** increased Cs content,the FA-Cs perovskite shows higher resistance to the cation exchange between FA+and PEA+.This Cs-content-dependent cation exchange results in the different PEAI reaction preferences with FA-Cs mixed-cation ***,higher Cs content with stronger resistance to cation exchange reaction leads to a wider processing window for post-treatment and defect passivation,which is beneficial for the fabrication of large-scale photovoltaic devices.

关键词： FA-Cs mixed-cation perovskite Cation exchange 2D PEA2PbI4 surface termination

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CsPbBr_(x)I_(3-x)thin films with multiple ammonium ligands for low turn-on pure-red perovskite light-emitting diodes

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Nano Research 2021年第1期14卷 191-197页

作者： Maowei Jiang Zhanhao Hu Luis K.Ono Yabing Qi Energy Materials and surface Sciences Unit(EMSSU) Okinawa Institute of Science and Technology Graduate University(OIST)1919-1 TanchaOnna-sonOkinawa 904-0495Japan

All-inorganic α-CsPbBr_(x)I_(3-x)perovskites featuring nano-sized crystallites show great potential for pure-red light-emitting diode(LED)***,the CsPbBr_(x)I_(3-x)LEDs based on nano-sized α-CsPbBr_(x)I_(3-x)crystallites have been fabricated mainly via the classical colloidal route including a tedious procedure of nanocrystal synthesis,purification,ligand or anion exchange,film casting,*** the usually adopted conventional LED device structure,only high turn-on voltages(>2.7)have been achieved for CsPbBrxl3-x ***,this mix-halide system may suffer from severe spectra-shift under *** this report,CsPbBr_(x)I_(3-x)thin films featuring nano-sized crystallites are prepared by incorporating multiple ammonium ligands in a one-step spin-coating *** multiple ammonium ligands constrain the growth of CsPbBr_(x)I_(3-x)*** CsPbBr_(x)I_(3-x)thin films benefit from quantum *** corresponding CsPbBr_(x)I_(3-x)LEDs,adopting a conventional LED structure of indium-doped tin oxide(ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)/CsPbBr_(x)I_(3-x)/[6,6]-phenyl C61 butyric acid methyl ester(PCBM)/bathocuproine(BCP)/AI,emit pure-red color at Commission Internationale de I'eclairage(CIE)coordinates of(0.709,0.290),(0.711,0.289),etc.,which represent the highest color-purity for reported pure-red perovskite LEDs and meet the Rec.2020 requirement at CIE(0.708,0.292)very *** CsPbBr_(x)I_(3-x)LED shows a low turn-on voltage of 1.6 V,maximum external quantum efficiency of 8.94%,high luminance of 2,859 cd·m^(-2),and good color stability under bias.

关键词： CsPbBr_(x)I_(3-x)thin film nano-sized crystallites surface termination pure-red color perovskite light-emitting diode low turn-on voltage

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