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Manipulating high-temperature superconductivity by oxygen doping in Bi2Sr2CaCu2O8+δ thin flakes

National Science Review 2022年第10期9卷 112-119页

作者： Bin Lei Donghui Ma Shihao Liu Zeliang Sun Mengzhu Shi Weizhuang Zhuo Fanghang Yu Genda Gu Zhenyu Wang Xianhui Chen Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences and Department of Physics University of Science and Technology of China CAS Center for Excellence in Quantum Information and Quantum Physics Department of Condensed Matter Physics and Materials Science Brookhaven National Laboratory CAS Center for Excellence in Superconducting Electronics (CENSE) Collaborative Innovation Center of Advanced Microstructures Nanjing University

Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density.Compared to other methods,oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides.Although several approaches,such as thermal annealing and oxygen migration,have been introduced to change the oxygen content,a continuous and reversible solution that can be integrated with modern electronic technology is much in demand.Here,we report a novel ionic field-effect transistor using solid Gd-doped CeO2as the gate dielectric,which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature.In Bi2Sr2CaCu2O8+δ(Bi-2212) thin flakes,we achieve a reversible superconductor-insulator transition by driving oxygen ions in and out of the samples with electric fields,and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level.Scaling analysis indicates that the reversible superconductor-insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition.Our work provides a route for realizing electric-field control of phase transition in correlated oxides.Moreover,the configuration of this type of transistor makes heterostructure/interface engineering possible,thus having the potential to serve as the next-generation all-solid-state field-effect transistor.

关键词： high-temperature superconductivity oxygen doping electric field effect all-solid-state field effect transistor superconductor–insulator transition

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Boosted on-chip energy storage with transistors

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National Science Review 2022年第10期9卷 56-57页

作者： Tongchao Liu Khalil Amine Chemical Sciences and Engineering Division Argonne National Laboratory Materials Science and Engineering Stanford University

On-chip energy-storage devices play an important role in powering wireless environmental sensors and microelectrome chanical systems [1,2].Starting from the 1980s,on-chip energy-storage devices,including microbatteries and super capacitors,have been applied to power the real-time clock on a chip [3].These tiny batteries/supercapacitors enable the real-time clock to keep working when the electronics are off.In this way,electronic devices can be restarted with a valid time.With the development of electronic devices,signal processing and communication have become much faster,while also requiring more powerful energy-storage devices to drive them [4-6].

关键词： high-temperature superconductivity oxygen doping electric field effect all-solid-state field effect transistor superconductor–insulator transition

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