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Determination of the absolute ^(32)S/^(34)S ratio of IAEA-S-1 reference material and V-CDT sulfur isotope standard

Science China Earth Sciences 1999年第1期42卷 45-51页

作者：丁悌平白瑞梅李延河万德芳邹晓秋张青莲

The absolute 32S/34S ratios of IAEA-S-1 reference material and V-CDT standard.are determined. For cross-checking, two sets of synthetic isotope mixtures are prepared from high purity 32S and 34S-enriched materials in different forms: the first set is prepared from BaSO4 whereas the second is prepared from Ag2S. The sulfur isotope analyses are done by using SF6 method with a MAT-251 EM mass spectrometer. The resulting 32S/34S ratio of IAEA-S-1 reference material is 22.656 4± 0.006 0, and that of V-CDT is 22.649 6± 0.006 0.

关键词： sulfur isotope absolute ratio measurement international standard.

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THE USE OF SNAPPING TURTLE RED BLOOD CELLS FOR STANDA RDIZATION IN FLOW CYTOMETRY

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Chinese Science Bulletin 1989年第3期34卷 248-252页

作者：宋平根李岩曹莉李素文薛绍白 Department of Biology Beijing Normal University

Science flow cytometry measurement of intensity is relative measur, ement. The standard. are therefore necessary. There are two types of standard.. One is the instrumental standard.for adjustment FCM. Fluorescent microspheres or glutaraldehyde fixed chicken red blood cells are commonly used for this purpose. The other is the DNA internal standard.of nuclear DNA ploidy analysis for correcting the changes in preparation and staining condition and instrument drift during measurement.

关键词： flow cytometry snapping turtle red blood DNA internal standard.

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Discussion on the relationship between Δ VEB and IE presented in thermal resistance standard.IEC60747-7 Version 2000

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Progress in Natural Science:Materials International 2005年第4期 93-97页

作者： MIAO Qinghai 1*, MIAO Yuan 2, ZHU Yangjun 1, ZHANG Xinghua 1, YANG Lieyong 2, YANG Zhiwei 2, ZHANG Dejun 1, CHEN Fengxia 3 and LU Shuojin 1(1. School of Physics and Microelectronics, Shandong University, Jinan 250100, China 2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 3. The 13th Research Institute, CETC, Shijiazhuang 050051, China) School of Physics and Microelectronics Shandong University Jinan 250100 China School of Electrical and Electronic Engineering Nanyang Technological University Singapore The 13th Research Institute CETC Shijiazhuang 050051 China

This paper points out an error in the principle figure and the waveform figure of the thermal resistance standard.IEC747 7, which describes the relation between the I V curves and the temperature. It theoretically proves that the I V T curve of the standard.contradicts the physical law. This contradiction is also revealed by experimental results. Finally, the correct I V T characteristic curve and the waveform figure at two different temperatures for the same transistor is given, which serves as the reference to correct the standard.

关键词： transistor thermal resistance standard.

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