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Ultrahigh quantum efficiency photodetector and ultrafast reversible surface wettability transition of square in2o3 nanowires

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Nano Research 2017年第8期10卷 2772-2781页

作者： Ming Meng Xinglong Wu Xiaoli Ji Zhixing Gan Lizhe Liu Jiancang Shen Paul K. Chu School of Physics and Telecommunication Engineering Zhoukou Normal University Zhoukou 466001 China Key Laboratory of Modern Acoustics MOE Institute of Acoustics Collaborative Innovation Center of Advanced Microstructures Notional Laboratory of Solid State Microstructures Nanjing University Nonjing 210093 China School of Electronic Science and Engineering Nanjing University Nanjing 210093 China Key Laboratory of optoelectronic Technology of Jiangsu Province School of Physical Science and Technology Nanjing Normal University Nanjing 210023 China Department of Physics and Materials Science City University ofHong Kong Tat Chee Avenue Kowloon Hong Kong China

Due to a large surface-to-volume ratio, the optoelectronic performance of low- dimensional semiconductor nanostructure-based photodetectors depends in principle on chemisorption/photodesorption at the exposed surface, but practical examples that show such an effect are still unavailable. Some theoretical calculations have predicted that the {001} facets of in2o3 can effectively accumulate photogenerated holes under irradiation, providing a model material to examine whether the facet cutting of nanowires （NWs） can boost their optoelectronic performance. Herein, we present the design and construction of a novel nanowire-based photodetector using square in2o3 NWs with four exposed {001} crystal facets. The photodetector delivers excellent optoelectronic performance with excellent repeatability, fast response speed, high spectral responsivity （Rλ）, and high external quantum efficiency （EQE）. The Rλ and EQE values are as high as 4.8 × 10^6 A/W and 1.46 × 10^9%, respectively, which are larger than those of other popular semiconductor photodetectors. In addition, the square in2o3 NWs show hydrophobic wettability as manifested by a contact angle of 118° and a fast photoinduced reversible switching behavior is observed.

关键词： square in2o3 nanowires crystal facet photodetector reversible wettability transition

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