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spin-dependent tunneling through a spin precession quantum dot

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Journal of Shanghai University(English Edition) 2008年第1期12卷 39-42页

作者：张爱芳辛子华宋红岩吴留坡施耀铭 Department of Physics College of Sciences Shanghai University Shanghai 200444 P. R. China

spin-polarized transport through a precessing magnetic spin coupled to ferromagnetic electrodes is studied using a non-equilibrium Green＇s function approach. The characteristic of conductance is obtained at zero temperature. We find that competition between spin-exchange interaction on the spin site and spin-orbit interaction in the barriers dominates the resonant behavior of conductance. In a parallel configuration, conductance peaks have identical amplitude. With the angle θ increasing, the width of resonant peaks is broadened or narrowed for different spin coherent states. In an anti-parallel case, spin-flip tunneling in the barriers will essentially enhance amplitude of the conductance peak.

关键词： spin-dependent transport precessing spin ferromagnetic electrodes

spin-dependent Electroresistance Behaviour of Nd_(0.67)Sr_(0.33)MnO_(3-δ) (0≤δ≤0.20)

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Journal of Rare Earths 2007年第S2期25卷 69-71页

作者： Zhou Zhihui Yang Changping Deng Heng Yang Fujun Provincial Key Laboratory of Piezoelectric Ceramics Materials and Apparatus Faculty of Physics&Electronic TechnologyHubei UniversityWuhan 430062China

Oxygen deficient Nd_(0.67)Sr_(0.33)MnO_(3-δ) ceramic samples were prepared using conventional ceramic technology.A colossal electroresistance(CER)effect was found in Nd_(0.67)Sr_(0.33)MnO_(3-δ) *** electrical transport is magnetically coupled and spin-dependent over grain or phase ***-field-induced changes of the spin array orientations inside of and between the magnetic domains by grain or phase boundaries have to be concluded for the strong electroresistive effect in Nd_(0.67)Sr_(0.33)MnO_(3-δ) series.

关键词： manganites spin-dependent transport electroresistance varistor rare earths

Huge Tunneling Magnetoresistance in Magnetic Tunnel Junction with Heusler Alloy Co_(2)MnSi Electrodes

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Chinese Journal of Chemical Physics 2021年第3期34卷 273-280,I0047页

作者： Yu-jie Hu Jing Huang Jia-ning Wang Qun-xiang Li Department of Chemical Physics&Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of ChinaHefei 230026China School of Materials and Chemical Engineering Anhui Jianzhu UniversityHefei 230601China

Magnetic tunnel junction with a large tunneling magnetoresistance has attracted great attention due to its importance in the spintronics *** performing extensive density functional theory calculations combined with the nonequilibrium Green’s function method,we explore the spin-dependent transport properties of a magnetic tunnel junction,in which a non-polar SrTiO_(3) barrier layer is sandwiched between two Heusler alloy Co_(2)MnSi *** results clearly reveal that the near perfect spin-filtering effect appears in the parallel magnetization *** transmission coefficient in the parallel magnetization configuration at the Fermi level is several orders of magnitude larger than that in the antiparallel magnetization configuration,resulting in a huge tunneling magnetoresistance(i.e.>10^(6)),which originates from the coherent spin-polarized tunneling,due to the half-metallic nature of Co_(2)MnSi electrodes and the significant spin-polarization of the interfacial Ti_(3)d orbital.

关键词： Magnetic tunnel junction spin-dependent transport First-principles Tunneling magnetoresistance

Current spin polarization of a platform molecule with compression effect

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Chinese Physics B 2022年第7期31卷 498-504页

作者： Zhi Yang Feng Sun Deng-Hui Chen Zi-Qun Wang Chuan-Kui Wang Zong-Liang Li Shuai Qiu Shandong Key Laboratory of Medical Physics and Image Processing&Shandong Provincial Engineering and Technical Center of Light Manipulations School of Physics and ElectronicsShandong Normal UniversityJinan 250358China Zao Zhuang University Zao Zhuang 277160China

Using the first-principles method,the spin-dependent transport properties of a novel platform molecule containing a freestanding molecular wire is investigated by simulating the spin-polarized scanning tunneling microscope experiment with Ni tip and Au substrate *** calculations show that the total current increases as the tip gradually approaches to the substrate,which is consistent with the conductance obtained from previous *** interestingly,the spin polarization(SP)of current modulated by compression effect has the completely opposite trend to the total *** analyses reveal that the reduction of SP of current with compression process originates from the promotion of spin-down electron channel,which is controlled by deforming the molecule *** addition,the density of states shows that the SP of current is directly affected by the organic–ferromagnetic *** weak orbital hybridization between the Ni tip and propynyl of molecule results in high interfacial SP,whereas the breaking of the C≡C triple of propynyl in favor of the Ni–C–C bond induces the strong orbital hybridization and restrains the interfacial *** work proposes a new way to control and design the SP of current through organic–ferromagnetic spinterface using functional molecular platform.

关键词： molecular spintronics spin-dependent transport spin polarization single-molecule junctions

spin filtering magnetic modulation and spin-polarization switching in hybrid ferromagnet/semiconductor structures

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Science China(Physics,Mechanics & Astronomy) 2014年第6期57卷 1057-1062页

作者： XU HuaiZhe WANG LiYing YAN QiQi ZHANG YaPing ZHANG ShiChao State Key Laboratory of Software Development Environment and Department of Physics Beihang University Faculty of Engineering The University of Nottingham Ningbo School of Materials Science and Engineering Beihang University

Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter *** dependencies of electron spin-polarization on the strip’s magnetization strength,width and position have been systematically investigated.A novel magnetic control spin-polarization switch is proposed by inserting a ferromagnetic metal(FM)strip eccentric in relation to off the center of the spin filter,which produces the first energy level spin-polarization *** is believed to be of significant importance for the realization of semiconductor spintronics multiple-value logic devices.

关键词： spin-dependent transport spin polarization switch magnetic manipulation spin filter