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spin injection into heavily-doped n-GaN via Schottky barrier

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Journal of Semiconductors 2023年第8期44卷 57-61页

作者： Zhenhao Sun Ning Tang Shuaiyu Chen Fan Zhang Haoran Fan Shixiong Zhang Rongxin Wang Xi Lin Jianping Liu Weikun Ge Bo Shen State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China Frontiers Science Center for Nano-optoelectronics&Collaboration Innovation Center of Quantum Matter Peking UniversityBeijing 100871China Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO) Chinese Academy of SciencesSuzhou 215123China International Center for Quantum Materials Peking UniversityBeijing 100871China

spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts.The spin injection efficiency of 21%was achieved at 1.7 K.It was confirmed that the thin Schottky barrier formed between the heavily ndoped GaN and Co was conducive to the direct spin tunneling,by reducing the spin scattering relaxation through the interface states.

关键词： GaN spin injection Schottky barrier magnetoresistance

spin injection in a ferromagnet/resonant tunneling diode heterostructure

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Journal of University of Science and Technology Beijing 2008年第5期15卷 638-643页

作者： Jin Bao Fang Wan Yu Wang Xiaoguang Xu Yong Jiang School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China

The spin transport property of a ferromagnet （FM）/insulator （Ⅰ）/resonant tunneling diode （RTD） heterostructure was studied. The transmission coefficient and spin polarization in a multilayered heterostructure was calculated by a Schrdinger wave equation. An Airy function formalism approach was used to solve this equation. Based on the transfer matrix approach,the transmittivity of the structure was determined as a function of the Feimi energy and other parameters. The result shows that the spin polarization induced by the structure oscillates with the increasing Fermi energy of the FM layer. While the thickness of the RTD is reduced,the resonant peaks become broad. In the heterostructure,the spin polarization reaches as high as 40% and can be easily controlled by the external bias voltage.

关键词： spin injection resonant tunneling diode heterostructure spin polarization

spin injection from Ferromagnetic Semiconductor CoZnO into ZnO

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Journal of Materials Science & Technology 2008年第3期24卷 415-418页

作者： Gang JI Shishen YAN Yanxue CHEN Qiang CAO Wei XIA Yihua LIU Institute of Microstructure and Properties of Advanced Materials Beijing University of Technology Beijing 100124 China School of Physics and Microelectronics and National Key Laboratory of Crystal Materials Shandong University Jinan 250100 China School of Information Science and Engineering and National Key Laboratory of Crystal Materials Shandong University Jinan 250100 China

2x （FeNi/CoZnO）/ZnO/（CoZnO/Co） x2 spin-injection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2x（FeNi/CoZnO） and （CoZnO/Co）x2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-injection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.

关键词： spin injection Magnetoresistance Ferromagnetic semiconductor

Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions

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Acta Metallurgica Sinica(English Letters) 2009年第2期22卷 153-160页

作者： Gang JI Ze ZHANG Yanxue CHEN Shishen YAN Yihua LIU Liangmo MEI Institute of Microstructure and Properties of Advanced Materials Beijing University of Technology Beijing 100124 China Institute of Biophysics Chinese Academy of Sciences Beijing 100101 China School of Physics and National Key Laboratory of Crystal Materials Shandong University Jinan 250100 China

[FeNi（3 nm）/Zn1-xCoxO（3 nm）]2/ZnO（d nm）/[Zn1-xCoxO（3 nm）/Co（3 nm）]2 （d=3 and 10） semiconductor junctions were prepared by magnetron sputtering system and photolithography. The spin valve effect was observed in these junctions because the utility of the ferromagnetic composite layers acted as soft and hard magnetic layers. The electrical detection was performed by measuring the magnetoresistance of these junctions to investigate the current spin polarization asc in the ZnO layer and the spin injection efficiency η of spin-polarized electrons. asc was reduced from 11.7% （and 10.5%） at 90 K to 7.31% （and 5.93%） at room temperature for d=3 （and d=10）. And η was reduced from 39.5% （and 35.5%） at 90 K to 24.7% （and 20.0%） at room temperature for d=3 （and d=10）.

关键词： spin injection Electrical detection Magnetoresistance Room temperature ferromagnetic semiconductor Ferromagnetic composite layers

Thermal stability of the spin injection in Co/Ag/Co lateral spin valves

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Chinese Physics B 2018年第9期27卷 495-499页

作者：王乐陈鹭琛刘雯雨韩烁王伟伟卢占杰陈珊珊 Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Natual Materials & Micro-nano Devices Renmin University of China Department of Physics Xiamen University

spin injection, spin diffusion, and spin detection are investigated in Co/Ag/Co lateral spin valves at room temperature.Clear spin accumulation signals are detected by the non-local measurement. By fitting the results to the one-dimensional diffusion equation,8.6% spin polarization of the Co/Ag interface and -180 nm spin diffusion length in Ag are obtained.Thermal treatment results show that the spin accumulation signal drastically decreases after 100℃ annealing, and disappears under 200℃ annealing. Our results demonstrate that, compared to the spin diffusion length, the decrease and the disappearance of the spin accumulation signal are mainly dominated by the variation of the interfacial spin polarization of the Co/Ag interface.

关键词： spin injection spin diffusion length Co/Ag contact lateral spin valve

spin-polarized injection into a p-type GaAs layer from a Co_2 MnAl injector

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Chinese Physics B 2013年第4期22卷 406-409页

作者：袁思芃申超郑厚植刘奇王丽国孟康康赵建华 State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences

Electric luminescence and its circular polarization in a Co2 MnAl injector-based light emitting diode （LED） has been detected at the transition of e–A0 C , where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p ＋ -GaAs layer. The large volume of the p ＋ -GaAs layer can facilitate the detection of weak electric luminescence （EL） from e–A 0C emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p＋ -GaAs layer, where the spin polarization of injected electrons is destroyed by a very effective electron–hole exchange scattering （BAP mechanism）, the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.

关键词： spin injection Co 2 MnAl Heusler alloy electric luminescence

Molecular design for enhanced spin transport in molecular semiconductors

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Nano Research 2023年第12期16卷 13457-13473页

作者： Tingting Yang Yang Qin Xianrong Gu Xiangnan Sun Key Laboratory of Nanosystem and Hierarchical Fabrication CAS Center for Excellence in NanoscienceNational Center for Nanoscience and TechnologyBeijing 100190China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Material Science and Engineering Zhengzhou UniversityZhengzhou 450001China

Molecular semiconductors(MSCs),characterized by a longer spin lifetime than most of other materials due to their weak spin relaxation mechanisms,especially at room temperature,together with their abundant chemical tailorability and flexibility,are regarded as promising candidates for spintronic applications.Molecular spintronics,as an emerging subject that utilizes the unique properties of MSCs to study spin-dependent phenomena and properties,has attracted wide attention.In molecular spintronic devices,MSCs play the role as medium for information transport,process,and storage,in which the efficient spin inject–transport process is the prerequisite.Herein,we focus mainly on summarizing and discussing the recent advances in theoretical principles towards spin transport of MSCs in terms of the injection of spin-polarized carriers through the ferromagnetic metal/MSC interface and the subsequent transport within the MSC layer.Based on the theoretical progress,we cautiously present targeted design strategies of MSCs that contribute to the optimization of spin-transport efficiency and give favorable approaches to exploring accessional possibilities of spintronic materials.Finally,challenges and prospects regarding current spin transport are also presented,aiming to promote the development and application of the rosy and energetic field of molecular spintronics.

关键词： molecular spintronics molecular semiconductors spin transport spin injection molecular design

Progress in organic spintronics

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Chinese Physics B 2014年第5期23卷 9-26页

作者：杨福江韩士轩解士杰 School of Physics State Key Laboratory of Crystal MaterialsShandong University

Recent progress in organic spintronics is given an informative overview, covering spin injection, detection, and trans-port in organic spin valve devices, and the magnetic field effect in organic semiconductors （OSCs）. In particular, we focus on our own recent work in spin injection and the organic magnetic field effect （OMFE）.

关键词： organic material spintronics spin injection organic magnetic field effect

Effects of magnetic field orientation and injected current density on the output of nano-structured Co/Cu/Fe junctions

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Science China Mathematics 2001年第12期44卷 1615-1620页

作者：陈延学王守国王智河陈强陈敬林沈鸿烈刘宜华解士杰梅良模 Deparbnent of Physics Shandong University Jinan China Shanghai Metallurgy Institute Chinese Academy of Sciences Shanghai China Institute of Plasma Physics Chinese Academy of Sciences Hefei China

Co/Cu/Fe nano-sized sandwich thin films have been prepared by electron beam evaporation. 5 μm × 5 μm Co/Cu/Fe sandwich heterojunction was made using photolithography and lift-off process. The bipolar output signal of Co/Cu/Fe junctions has been measured and analyzed. The effects of applied magnetic field angle (referring to the normal of the junction plane) and injecting spin-polarized current on the output signals have been studied, and the measured results were discussed.

关键词： nano-structured junction spin injection bipolar output.