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High-Quality and Wafer-Scale Cubic Silicon Carbide Single Crystals

energy & Environmental Materials 2024年第4期7卷 442-449页

作者： Guobin Wang Da Sheng Yunfan Yang Hui Li Congcong Chai Zhenkai Xie Wenjun Wang Jiangang Guo Xiaolong Chen Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China

Cubic silicon carbide(3C-SiC)has superior mobility and thermal conduction over that of widely applied hexagonal ***,much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices like metal-oxidesemiconductor field effect ***,the growth of high-quality and wafer-scale 3C-SiC crystals has remained a big challenge up to now despite decades-long efforts by researchers because of its easy transformation into other polytypes during growth,limiting the development of 3C-SiC-based ***,we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique,beyond what is expected by classical nucleation *** enables the steady growth of high-quality and large-size 3C-SiC crystals(2-4-inch in diameter and 4.0-10.0 mm in thickness)*** as-grown 3C-SiC crystals are free of other polytypes and have high-crystalline *** findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.

关键词： cubic SiC high-temperature solution growth high-temperature surface tension solid-liquid interfacial energy wide band gap semiconductor

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Kinetics of reactive wetting of graphite by liquid Al and Cu-Si alloys

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Transactions of Nonferrous Metals Society of China 2015年第7期25卷 2473-2480页

作者：张弟朱定一张腾王沁峰福州大学材料科学与工程学院福州350108 集美大学机械与能源工程学院厦门361000

In order to reveal the physical essence of the spreading process of reactive wetting,a sort of model of energy to explain the driving force and wetting mechanism was *** reactive wetting of molten A1 and Cu Si on graphite was studied by a modified sessile drop method under a vacuum,in which the contact angles were measured by ADSA *** thermodynamic and kinetic processes of the typical reactive wetting were focused on,the thermodynamic equations of energy relations were derived,the interfacial energy of graphite and solid-liquid interfacial energy versus time at the triple line were calculated,and the dynamics model of interface energy is *** presented dynamics model is verified by means of experimental results,and it is shown that solid liquid interfacial energy decreases with time in exponential *** provides a new method for reference to explain the process from the angle of energy.

关键词： reactive wetting solid-liquid interfacial energy contact angle graphite interface reaction

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