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Direct synthesis of large-area Al-doped graphene by chemical vapor deposition:Advancing the substitutionally doped graphene family

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Nano Research 2022年第2期15卷 1310-1318页

作者： Sami Ullah Yu Liu Maria Hasan Wenwen Zeng Qitao Shi Xiaoqin Yang Lei Fu Huy Q.Ta Xueyu Lian Jingyu Sun Ruizhi Yang Lijun Liu Mark H.Rummeli College of Energy Soochow Institute for Energy and Materials Innovations Soochow UniversitySuzhou 215006China Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow UniversitySuzhou 215006China NUTECH School of Applied Sciences&Humanities and Computer Engineering Department National University of TechnologyIslamabad 42000Pakistan Centre of Polymer and Carbon Materials Polish Academy of SciencesM.Curie-Sklodowskiej 34Zabrze 41-819Poland School of Energy and Power Engineering Xian Jiaotong UniversityXian 710049China College of Chemistry and Molecular Science Wuhan UniversityWuhan 430072China Institute for Complex Materials IFW Dresden 20 Helmholtz Strasse Dresden 01069Germany Institute of Environmental Technology VSB-Technical University of Ostrava17.listopadu 15Ostrava 70833Czech Republic

Graphene doping continues to gather momentum because it enables graphene properties to be tuned,thereby affording new properties to,improve the performance of,and expand the application potential of *** can be chemically doped using various methods such as surface functionalization,hybrid composites(e.g.,nanoparticle decoration),and substitution doping,wherein C atoms are replaced by foreign ones in the graphene *** works have predicted that graphene could be substitutionally doped by aluminum(Al)atoms,which could hold promise for exciting applications,including hydrogen storage and evolution,and *** theoretical predictions suggest that Al substitutionally doped graphene(AIG)could serve as a material for gas sensors and the catalytic decomposition of undesirable ***,fabricating Al substitutionally doped graphene has proven challenging until ***,we demonstrate how controlled-flow chemical vapor deposition(CVD)implementing a simple solid precursor can yield high-quality and large-area monolayer AIG,and this synthesis is unequivocally confirmed using various characterization methods including local electron energy-loss spectroscopy(EELS).Detailed high-resolution transmission electron microscopy(HRTEM)shows numerous bonding configurations between the Al atoms and the graphene lattice,some of which are not theoretically ***,the produced AIG shows a CO_(2) capturability superior to those of other substitutionally doped graphenes.

关键词： aluminum-doped graphene single-solid precursor chemical vapor deposition carbon dioxide capture energy storage catalytic applications

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