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Comparison of single-event upset generated by heavy ion and pulsed laser

Science China(Information Sciences) 2017年第7期60卷 243-251页

作者： Bin LIANG Ruiqiang SONG Jianwei HAN Yaqing CHI Rui CHEN Chunmei HU Jianjun CHEN Yingqi MA Shipeng SHANGGUAN College of Computer National University of Defense Technology Center for Space Science and Applied Research Chinese Academy of Sciences

single-event upset(SEU) is investigated using heavy ion and pulsed laser. The measured SEU cross sections of D and DICE flip-flops are compared. Measurement results indicate pulsed laser is capable of inducing similar SEU to those induced by heavy ion. 3D-TCAD simulation is performed to investigate the factors to impact pulsed laser induced SEU. Simulation results show that the beam spot size significantly impacts SEU cross sections in both low and high laser energy while the variation of the equivalent LET only impacts SEU cross sections in the low laser energy.

关键词： single-event upset charge sharing cross sections heavy ion pulsed laser

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Flip-flops soft error rate evaluation approach considering internal single-event transient

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Science China(Information Sciences) 2015年第6期58卷 159-170页

作者： SONG RuiQiang CHEN ShuMing HE YiBai DU YanKang College of Computer Science National University of Defense Technology Science and Technology on Parallel and Distributed Processing Laboratory

The internal single-event transient(SET) induced upset in flip-flops is becoming significant with the increase of the operating frequency. However, the conventional soft error rate(SER) evaluation approach could only produce an approximate upset prediction result caused by the internal SET. In this paper, we propose an improved SER evaluation approach based on Monte Carlo simulation. A novel SET-based upset model is implemented in the proposed evaluation approach to accurately predict upsets caused by the internal SET. A test chip was fabricated in a commercial 65 nm bulk process to validate the accuracy of the improved SER evaluation approach. The predicted single-event upset cross-sections are consistent with the experimental data.

关键词： soft error rate Monte Carlo internal SET single-event upset flip-flops

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Bitstream decoding and SEU-induced failure analysis in SRAM-based FPGAs

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Science China(Information Sciences) 2012年第4期55卷 971-982页

作者： WANG ZhongMing 1,2,YAO ZhiBin 2,GUO HongXia 2 & LV Min 1 1 Department of Engineering Physics,Tsinghua University,Beijing 100084,China 2 Northwest Institute of Nuclear Technology,Xi'an 710024,China Department of Engineering Physics Tsinghua University Beijing China Northwest Institute of Nuclear Technology Xi’an China

Reconfigurable SRAM-based FPGAs are highly susceptible to radiation induced single-event upsets (SEUs) in space *** bit flip in FPGAs configuration memory may alter user circuit permanently without proper bitstream reparation,which is a completely different phenomenon from upsets in traditional memory *** is important to find the relationship between a programmable resource and corresponding control bit in order to understand the impact of this *** this paper,a method is proposed to decode the bitstream of FPGAs from Xilinx Corporation,and then an analysis program is developed to parse the netlist of a specific design to get the configuration state of occupied programmable logic and *** that,an SEU propagation rule is established according to the resource type to identify critical logic nodes and paths,which could destroy the circuit topological *** decoded relationship is stored in a *** database is queried to get the sensitive bits of a specific *** result can be used to represent the vulnerability of the system and predict the on orbit system failure *** analysis tool was validated through fault injection and accelerator irradiation experiment.

关键词： radiation effect single-event effect single-event upset SRAM-based FPGA fault injection

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