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Fano-Kondo Effect in a Triple Quantum Dots Coupled to Ferromagnetic Leads

Chinese Physics Letters 2008年第8期25卷 3028-3031页

作者：毕爱华吴绍全侯涛孙威立 College of Physics and electronic Engineering Sichuan Normal University Chengdu 610068

Using the Keldysh nonequilibrium Green function and equation-of-motion technique, we have qualitatively studied the spin-dependent transport of a triple-QD system in the Kondo regime. It is shown that the Kondo resonance and Fang interference coexist, and in this system the Fang Kondo effect shows dip behaviours richer than that in the T-shaped QDs. The interdot coupling, the energy level of the side coupled QDs and the spin polarization strength greatly influence the DOS of the central quantum dot QDo. Either the increase of the coupling strength between the two QDs or that of the energy levels of the side coupled QDs enhances the Kondo resonance. Especially, the Kondo resonance is strengthened greatly when the side dot energy is fixed at the Fermi energy. Meanwhile, the Kondo resonance splits for the spin-up and spin-down configurations due to the polarization： the down-spin resonance is enhanced, and the up-spin resonance is suppressed.

关键词： single-electron transistor MESOSCOPIC RING TRANSPORT RESONANCE SYSTEM

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Demonstration and operation of quantum harmonic oscillators in an AlGaAs–GaAs heterostructure

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Frontiers of physics 2023年第1期18卷 63-69页

作者： Guangqiang Mei Pengfei Suo Li Mao Min Feng Limin Cao School of Physics and Technology Center for Nanoscience and Nanotechnologyand Key Laboratory of Artificial Micro-and Nano-structures of Ministry of EducationWuhan UniversityWuhan 430072China

The quantum harmonic oscillator(QHO),one of the most important and ubiquitous model systems in quantum mechanics,features equally spaced energy levels or *** we present a new class of nearly ideal QHOs formed by hydrogenic substitutional dopants in an AlGaAs/GaAs *** the basis of model calculations,we demonstrate that,when aδ-doping Si donor substitutes the Ga/Al lattice site close to AlGaAs/GaAs heterointerface,a hydrogenic Si QHO,characterized by a restoring Coulomb force producing square law harmonic potential,is *** gives rise to QHO states with energy spacing of~8–9 *** experimentally confirm this proposal by utilizing gate tuning and measuring QHO states using an aluminum single-electron transistor(SET).A sharp and fast oscillation with period of~7–8 mV appears in addition to the regular Coulomb blockade(CB)oscillation with much larger period,for positive gate biases above 0.5 *** observation of fast oscillation and its behavior is quantitatively consistent with our theoretical result,manifesting the harmonic motion of electrons from the *** results might establish a general principle to design,construct and manipulate QHOs in semiconductor heterostructures,opening future possibilities for their quantum applications.

关键词： quantum harmonic oscillator AlGaAs/GaAs semiconductor heterostructure single-electron transistor gate tuning

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Persistent Current in a Mesoscopic Ring Side-Attached with a Quantum Dot

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Chinese Physics Letters 2005年第11期22卷 2918-2921页

作者：周波谌雄文李铁聂喻梅吴绍全 School of Mathematics and Physics Chongqing Institute of Technology Chongqing 400050 Department of Physics College of Huaihua Huaihua 418008 Department of Physics Sichuan Normal University Chengdu 610066

We theoretically investigate properties of the ground state of a closed dot-ring system with a magnetic flux in the Kondo regime by means of a tight-banding Anderson Hamiltonian, using the Slave-Boson mean-field approach. The persistent current shows interesting dependences on the parity and on the size of the system. The signature of Kondo resonance at ζk/L = 0.15 is expected to be observed experimentally in the future. With the intensity of the coupling tD changes from weak to strong, the properties of the system changes largely, which are different from the in-line one because of the attached dot.

关键词： single-electron transistor

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