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single-cluster electronics using metallic clusters:Fabrications,regulations,and applications

Nano Research 2024年第1期17卷 65-78页

作者： Caiyun Wei Wei Xu Shurui Ji Ruiyun Huang Junyang Liu Wenqiu Su Jie Bai Jiale Huang Wenjing Hong State Key Laboratory of Physical Chemistry of Solid Surfaces National Engineering Research Centre of Chemicals for Electronic ManufacturingCollege of Chemistry and Chemical Engineering&Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province(IKKEM)Xiamen UniversityXiamen 361005China

Metallic clusters,ranging from 1 to 2 nm in size,have emerged as promising candidates for creating nanoelectronic devices at the single-cluster *** the intermediate quantum properties between metals and semiconductors,these metallic clusters offer an alternative pathway to silicon-based electronics and organic molecules for miniaturized electronics with dimensions below 5 *** progress has been made in studies of single-cluster electronic ***,a clear guide for selecting,synthesizing,and fabricating functional single-cluster electronic devices is still *** review article provides a comprehensive overview of single-cluster electronic devices,including the mechanisms of electron transport,the fabrication of devices,and the regulations of electron transport ***,we discuss the challenges and future directions for single-cluster electronic devices and their potential applications.

关键词： single-cluster junctions electronic properties electron transport metallic clusters structure regulation

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Halide Anchors for single-cluster Electronics

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CCS Chemistry 2023年第7期5卷 1574-1582页

作者： Caiyun Wei Jingyao Ye Yuming Su Jueting Zheng Siqiang Xiao Jiawei Chen Saisai Yuan Chengyang Zhang Jie Bai Han Xu Jia Shi Jiale Huang Wenjing Hong State Key Laboratory of Physical Chemistry of Solid Surfaces College of Chemistry and Chemical EngineeringXiamen UniversityXiamen 361005

Due to their unique electronic structure,well-defined metal clusters at the atomic level are promising materials for single-cluster ***,coupling between the electrode and the cluster remains challenging mainly due to the coverage of bulky ligands on the noble *** the scanning tunneling microscopy break junction(STM-BJ)technique,we have developed a“direct contact”approach to fabrication and investigation of the charge transport through single-cluster junctions of AgCu bimetallic metal clusterswith different halide *** that the electrodes could make contact directly with the surface halides of the single-cluster junctions and experience different contact resistance from different halogen *** and calculations reveal that the halide anchors provided efficient coupling between the cluster and the electrode,and the enhanced coupling with various halide anchors promoted electron transport and improved transmission *** work offers a“direct contact”strategy for interface design between clusters of noble metals and electrodes,an essential step in progress toward single-cluster electronics.

关键词： single-cluster junctions metal clusters halide anchoring site coupling strength

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