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Study on electrical defects level in single layer two-dimensional Ta2O5

Chinese Physics B 2016年第4期25卷 339-343页

作者：李大海宋雄飞胡林峰王子仪张荣君陈良尧张卫周鹏 Department of Optical Science and Engineering Fudan University Shanghai 200433 China ASIC & System State Key Laboratory School of Microelectronics Fudan University Shanghai 200433 China Department of Materials Science and Engineering Fudan University Shanghai 200433 China

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta205 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta205 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2Os. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2Os, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5.

关键词： single layer electronic defects spectroscopic ellipsometry

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SnO_2 hollow nanospheres assembled by single layer nanocrystals as anode material for high performance Li ion batteries

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Chinese Chemical Letters 2015年第1期26卷 124-128页

作者： Wei Wei Ling-Xiao Song Lin Guo School of Chemistry and Chemical Engineering Shangqiu Normal University School of Chemistry and Environment Beijing University of Aeronautics & Astronautics College of Chemistry and Molecular Engineering Zhengzhou University

SnO2 hollow nanospheres were successfully synthesized via a facile one-step solvothermal *** show that the as-prepared SnO2 spheres are of hollow structure with a diameter at around 50 nm,and especially,the shell of the spheres is assembled by single layer SnO2 *** surface area of the material reaches up to 202.5 m^2/*** an anode material for Li ion batteries,the sample exhibited improved electrochemical performance compared with commercial SnO2 *** cycled at high current rate of 0.5 C,1 C and 0.5 C for 20 cycles,respectively,the electrode can maintain a capacity of 509 mAh/*** suitable shell thickness/diameter ratio endows the good structural stability of the material during cycling,which promises the excellent cycling performance of the *** large surface area and the ultra thin shell ensure the high rate performance of the material.

关键词： SnO2 Hollow nanospheres single layer Li ion batteries

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A single layer zero skew clock routing in X architecture

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Science in China(Series F) 2009年第8期52卷 1466-1475页

作者： SHEN WeiXiang CAI YiCi HONG XianLong HU Jiang LU Bing Electronic Design Automation Laboratory Departmeat of Computer Science and Technology Tsinghua University Beijing 100084 China Electrical and Computer Engineering Texas A&M University College Station TX 77843 USA Cadence Design Systems Inc 35 Spring Street New Providence NJ 07974 USA

With its advantages in wirelength reduction and routing flexibility compared with conventional Manhattan routing, X architecture has been proposed and applied to modern IC design. As a critical part in high-performance integrated circuits, clock network design meets great challenges due to feature size decrease and clock frequency increase. In order to eliminate the delay and attenuation of clock signal introduced by the vias, and to make it more tolerant to process variations, in this paper, we propose an algorithm of a single layer zero skew clock routing in X architecture （called Pianar-CRX）. Our Planar- CRX method integrates the extended deferred-merge embedding algorithm （DME-X, which extends the DME algorithm to X architecture） with modified Ohtsuki＇s line-search algorithm to minimize the total wirelength and the bends. Compared with planar clock routing in the Manhattan plane, our method achieves a reduction of 6.81% in total wirelength on average and gets the resultant clock tree with fewer bends. Experimental results also indicate that our solution can be comparable with previous non-planar zero skew clock routing algorithm.

关键词： clock routing single layer X architecture zero skew

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Domain Decomposition for Wavelet single layer on Geometries with Patches

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Applied Mathematics 2016年第15期7卷 1798-1823页

作者： Maharavo Randrianarivony Pappelweg 7 Zimmer 21 Sankt Augustin Germany

We focus on the single layer formulation which provides an integral equation of the first kind that is very badly conditioned. The condition number of the unpreconditioned system increases exponentially with the multiscale levels. A remedy utilizing overlapping domain decompositions applied to the Boundary Element Method by means of wavelets is examined. The width of the overlapping of the subdomains plays an important role in the estimation of the eigenvalues as well as the condition number of the additive domain decomposition operator. We examine the convergence analysis of the domain decomposition method which depends on the wavelet levels and on the size of the subdomain overlaps. Our theoretical results related to the additive Schwarz method are corroborated by numerical outputs.

关键词： Wavelet single layer Patch Domain Decomposition Convergence Graph Partitioning Condition Number

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