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Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM

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Chinese Physics B 2021年第3期30卷 394-401页

作者：莫莉华叶兵刘杰罗捷孙友梅蔡畅李东青赵培雄贺泽 Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China

Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power consumption.When used in atmospheric environments,3D ICs are irradiated inevitably by neutrons.In this paper,a 3D die-stacked SRAM device is constructed based on a real planar SRAM device.Then,the single event upsets(SEUs)caused by neutrons with different energies are studied by the Monte Carlo method.The SEU cross-sections for each die and for the whole three-layer die-stacked SRAM device is obtained for neutrons with energy ranging from 1 MeV to 1000 MeV.The results indicate that the variation trend of the SEU cross-section for every single die and for the entire die-stacked device is consistent,but the specific values are different.The SEU cross-section is shown to be dependent on the threshold of linear energy transfer(LETth)and thickness of the sensitive volume(Tsv).The secondary particle distribution and energy deposition are analyzed,and the internal mechanism that is responsible for this difference is illustrated.Besides,the ratio and patterns of multiple bit upset(MBU)caused by neutrons with different energies are also presented.This work is helpful for the aerospace IC designers to understand the SEU mechanism of 3D ICs caused by neutrons irradiation.

关键词： neutron three-dimension ICs single event upset multi-bit upset Geant4

Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

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Chinese Physics B 2017年第8期26卷 536-541页

作者：叶兵刘杰王铁山刘天奇罗捷王斌殷亚楠姬庆刚胡培培孙友梅侯明东 Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences(UCAS) Beijing 100049China Lanzhou University Lanzhou 730000China

This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset （SEU） test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.

关键词： single event upset energy straggle proton irradiation nanodevice

Impact of temperature on single event upset measurement by heavy ions in SRAM devices

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Journal of Semiconductors 2014年第8期35卷 98-103页

作者：刘天奇耿超张战刚赵发展古松童腾习凯刘刚韩郑生侯明东刘杰 Institute of Modern Physics Chinese Academy of Sciences University of Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences

The temperature dependence of single event upset （SEU） measurement both in commercial bulk and silicon on insulator （SOI） static random access memories （SRAMs） has been investigated by experiment in the Heavy Ion Research Facility in Lanzhou （HIRFL）. For commercial bulk SRAM, the SEU cross section measured by 12C ions is very sensitive to the temperature. The temperature test of SEU in SOl SRAM was conducted by 209Bi and 12C ions, respectively, and the SEU cross sections display a remarkable growth with the elevated temperature for 12C ions but keep constant for 209Bi ions. The impact of temperature on SEU measurement was analyzed by Monte Carlo simulation. It is revealed that the SEU cross section is significantly affected by the temperature around the threshold linear energy transfer of SEU occurrence. As the SEU occurrence approaches saturation, the SEU cross section gradually exhibits less temperature dependency. Based on this result, the experimental data measured in HIRFL was analyzed, and then a reasonable method of predicting the on-orbit SEU rate was proposed.

关键词： single event upset temperature dependence static random access memory Monte Carlo simulation

Recovery of single event upset in advanced complementary metal-oxide semiconductor static random access memory cells

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Chinese Physics B 2012年第2期21卷 624-628页

作者：秦军瑞陈书明梁斌刘必慰 College of Computer National University of Defense TechnologyChangsha 410073China

Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.

关键词： single event upset multi-node charge collection static random access memory angulardependence

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

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Chinese Physics B 2014年第8期23卷 415-419页

作者：耿超习凯刘天奇古松刘杰 Institute of Modern Physiscs Chinese Academy of Sciences University of Chinese Academy of Sciences

Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis （MUFPSA）, we study the temporal characteristics of ion-velocity susceptibility to the single event upset （SEU） effect, including the deposited energy, traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of 2~9Bi have a wider distribution of energy deposition than 132Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer （LET） of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.

关键词： ion-velocity single event upset deposited energy traversed time

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

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Chinese Physics B 2014年第11期23卷 612-615页

作者：肖尧郭红霞张凤祁赵雯王燕萍张科营丁李利范雪罗尹虹王园明 State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Northwest Institute of Nuclear Technology Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences State Key Laboratory of Electronic Thin Films and Integrated Devices

Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.

关键词： single event upset total dose static random access memory imprint effect

Design of a high-performance 12T SRAM cell for single event upset tolerance

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Science China(Information Sciences) 2021年第11期64卷 251-252页

作者： Chunhua QI Yanqing ZHANG Guoliang MA Chaoming LIU Tianqi WANG Liyi XIAO Mingxue HUO Guofu ZHAI Laboratory for Space Environment and Physical Sciences Harbin Institute of Technology School of Electrical Engineering and Automation Harbin Institute of Technology

Dear editor,As an important part of a cache, static random-access memory(SRAM) has been extensively utilized to satisfy the application requirements in modern embedded processors.It plays an important role in data interaction between the central processing unit and internal memory. Moreover,these data interactions are safety critical requiring highly reliable SRAM. However, owing to complementary metaloxide-semiconductor(CMOS) manufacturing processes entering the nanoscale era, SRAM is increasingly vulnerable to a single event upset(SEU).

关键词： Reliability single event upset SRAM radiation hardened by design single event effect

Selected Crosstalk Avoidance Code for Reliable Network-on-Chip

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Journal of Computer Science & Technology 2009年第6期24卷 1074-1085页

作者：张颖李华伟李晓维 Key Laboratory of Computer System and Architecture Institute of Computing Technology Chinese Academy of Sciences Graduate School of the Chinese Academy of Sciences

With the shrink of the technology into nanometer scale, network-on-chip （NOC） has become a reasonable solution for connecting plenty of IP blocks on a single chip. But it suffers from both crosstalk effects and single event upset （SEU）, especially crosstalk-induced delay, which may constrain the overall performance of NOC. In this paper, we introduce a reliable NOC design using a code with the capability of both crosstalk avoidance and single error correction. Such a code, named selected crosstalk avoidance code （SCAC） in our previous work, joins crosstalk avoidance code （CAC） and error correction code （ECC） together through codeword selection from an original CAC codeword set. It can handle possible error caused by either crosstalk effects or SEU. When designing a reliable NOC, data are encoded to SCAC codewords and can be transmitted rapidly and reliably across NOC. Experimental results show that the NOC design with SCAC achieves higher performance and is reliable to tolerate single errors. Compared with previous crosstalk avoidance methods, SCAC reduces wire overhead, power dissipation and the total delay. When SCAC is used in NOC, it can save 20% area overhead and reduce 49% power dissipation.

关键词： crosstalk avoidance codeword selection reliable network-on-chip single event upset

A novel radiation hardened by design latch

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Journal of Semiconductors 2009年第3期30卷 118-121页

作者：黄正峰梁华国 School of Computer and Information Hefei University of Technology

Due to aggressive technology scaling, radiation-induced soft errors have become a serious reliability concern in VLSI chip design. This paper presents a novel radiation hardened by design latch with high single-eventupset （SEU） immunity. The proposed latch can effectively mitigate SEU by internal dual interlocked scheme. The propagation delay, power dissipation and power delay product of the presented latch are evaluated by detailed SPICE simulations. Compared with previous SEU-hardening solutions such as TMR-Latch, the presented latch is more area efficient, delay and power efficient. Fault injection simulations also demonstrate the robustness of the presented latch even under high energy particle strikes.

关键词： soft error single event upset radiation hardened by design latch