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Construction of three-dimensional carbon framework-loaded silicon nanoparticles anchored by carbon film for highperformance lithium-ion battery anode materials

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Nano Research 2022年第7期15卷 6168-6175页

作者： Fan Wu Zhichao He Mingqiang Wang Yudong Huang Fei Wang School of Chemistry and Chemical Engineering Harbin Institute of TechnologyHarbin 150001China State Key Laboratory of Electroanalytical Chemistry Changchun Institute of Applied ChemistryChinese Academy of SciencesChangchun 130022China Jiangsu Province Key Laboratory of Fine Petrochemical Engineering Changzhou UniversityChangzhou 213164China

Si materials are widely considered to be the next-generation anode to replace the current commercial graphite-based anode due to its high energy ***,the large volume variation of silicon during(de)lithiation process leads to rapid capacity decay,hindering its commercial *** the various hollow structure designs of Si nanomaterials have improved their cycling stability in the laboratory,the high-pressure calendering process in the current industrial electrode preparation process might collapse the hollow structure and weaken the structural advantages of hollow silicon anode *** this work,a silicon carbon composite material(Si@3DC)in which Si nanoparticles were anchored on a three-dimensional carbon framework through carbon films was prepared by a simple proton exchange *** three-dimensional carbon framework with multiple hierarchical pores of Si@3DC was compatible with the high-pressure calendering process,but also could provide expansion space for Si nanoparticles during the lithiation process,and ensure good electronic and ionic *** carbon film on the surface of Si nanoparticles promoted the formation of stable solid electrolyte interphase(SEI)films,ensuring the good cycle stability of Si@3DC.

关键词： three-dimensional carbon framework silicon silicon-carbon anode lithium-ion battery

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TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and silicon-Ion-Implantation Followed by Rapid Thermal Annealing

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Journal of Materials Science and Chemical Engineering 2017年第1期5卷 15-25页

作者： Junji Yamanaka Shigenori Inoue Keisuke Arimoto Kiyokazu Nakagawa Kentarou Sawano Yasuhiro Shiraki Atsushi Moriya Yasuhiro Inokuchi Yasuo Kunii Center for Crystal Science and Technology University of Yamanashi Kofu Japan Advanced Research Laboratories Tokyo City University Tokyo Japan Hitachi Kokusai Electric Inc. Toyama Japan

Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carrier mobility. In this study we carry out a basic investigation of the change in microstructure of ion-implanted Si-C solid solution caused by rapid thermal annealing, because it is very important to realize a field-effect transistor made of this new material. The microstructures of arsenic-ion-, boron-ion-, and silicon-ion-implanted Si0.99C0.01 specimens upon thermal annealing are observed using transmission electron microscopy, and it is revealed that the rate of solid-state crystallization of ion-implanted Si-C is slower than that of the ion-implanted Si.

关键词： Strained Heterodevice silicon-carbon Alloy Ion Implantation Transmission Electron Microscopy

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