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Low insertion loss silicon-based spatial light modulator with high reflective materials outside Fabry–Perot cavity

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Chinese Physics B 2019年第10期28卷 376-380页

作者：田立飞匡迎新樊中朝李智勇 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

The extinction ratio and insertion loss of spatial light modulator are subject to the material problem, thus limiting its applications. One reflection-type silicon-based spatial light modulator with high reflective materials outside the Fabry-Perot cavity is demonstrated in this paper. The reflectivity values of the outside-cavity materials with different film layer numbers are simulated. The reflectivity values of 6-pair Ta2O5/SiO2 films at 1550 nm are experimentally verified to be as high as 99.9%. The surfaces of 6-pair Ta2O5/SiO2 films are smooth: their root-mean-square roughness values are as small as 0.53 nm. The insertion loss of the device at 1550 nm is only 1.2 dB. The high extinction ratio of the device at 1550 nm and 11 V is achieved to be 29.7 dB. The spatial light modulator has a high extinction ratio and low insertion loss for applications.

关键词： spatial light modulator high reflective materials silicon-based Fabry-Perot cavity

Research Towards Terahertz Power Amplifiers in silicon-based Process

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ZTE Communications 2023年第2期21卷 88-94页

作者： CHEN Jixin ZHOU Peigen YU Jiayang LI Zekun LI Huanbo PENG Lin Southeast University Nanjing 211189China ZTE Corporation Shenzhen 518057China

In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this ***,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 *** on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 *** further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak *** the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.

关键词： power amplifier power combining SiGe silicon-based Terahertz

Influence of Al-doping on electroluminescence of silicon-based films

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Chinese Science Bulletin 2001年第24期46卷 2043-2045页

作者： WU Xuemei YE Chunnuan ZHUGE Lanjian DONG Yemin TANG Naiyun YU Yuehui NING Zhaoyuan YAO Weiguo Department of Physics Suzhou UniversitySuzhou 215006China Ion Beam Laboratory Shanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050China

A series of Al-doped silicon-rich silica (AlSiO) composite films have been prepared by a dual ion beam co-sputtering method with a Al, Si and SiO2 composite target. The content of Al and Si in the films can be adjusted by changing the surface area of Al and Si of the target. Visible electroluminescence (EL) from the samples is found to have only one luminescence band peaked at 510 nm (2.4 eV). Experimental results show that the doping of Al is beneficial to reducing the onset voltage and to increasing the intensity of EL.

关键词： Al-doped silicon-based films EL.

Organosilicon polymer-derived ceramics: An overview

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Journal of Advanced Ceramics 2019年第4期8卷 457-478页

作者： Shengyang FU Min ZHU Yufang ZHU School of Materials Science and Engineering University of Shanghai for Science and Technology

Polymer-derived ceramics(PDCs) strategy shows a great deal of advantages for the fabrication of advanced ceramics. Organosilicon polymers facilitate the shaping process and different silicon-based ceramics with controllable components can be fabricated by modifying organosilicon polymers or adding fillers. It is worth noting that silicate ceramics can also be fabricated from organosilicon polymers by the introduction of active fillers, which could react with the produced silica during pyrolysis. The organosilicon polymer-derived ceramics show many unique properties, which have attracted many attentions in various fields. This review summarizes the typical organosilicon polymers and the processing of organosilicon polymers to fabricate silicon-based ceramics, especially highlights the three-dimensional(3 D) printing technique for shaping the organosilicon polymerderived ceramics, which makes the possibility to fabricate silicon-based ceramics with complex structure. More importantly, the recent studies on fabricating typical non-oxide and silicate ceramics derived from organosilicon polymers and their biomedical applications are highlighted.

关键词： polymer-derived ceramics(PDCs) organosilicon polymers 3D printing silicon-based ceramics

Si/Cu3_Si@C Composite Encapsulated in CNTs Network as High Performance Anode for Lithium Ion Batteries

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Journal of Wuhan University of Technology(Materials Science) 2019年第5期34卷 1055-1061页

作者：鲁豪祺 CHEN Weilun LIU Qiaoyun PANG Chunlei 薛丽红张五星 State Key Laboratory of Material Processing and Die&Mould Technology School of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan 430074China BTR New Energy Materials Inc. Shenzhen 518106China

Si/Cu3Si@C composites encapsulated in CNTs network(SCC-CNTs) were synthesized via the combination of ball-milling and CVD methods. SCC-CNTs consist of conductive Cu3Si, amorphous carbon layer, cross-linked CNTs, and the etched pores, which can play the synergistic effects on the improvement of electronic conductivity and Li^+ diffusion. The volume expansion of Si anode is also suppressed during the electrochemical process. The SCC-CNTs composites demonstrate a remarkably improved electrochemical performance compared with pure Si, which can deliver a discharge capacity of 2 171 mAh·g^-1 at 0.4 A·g^-1 with ICE of 85.2%, and retain 1197 mAh· g^-1 after 150 cycles. This work provides a facile approach to massively produce the high-performance Si-based anode materials for next-generation LIBs.

关键词： lithium-ion battery anodes silicon-based composite CNTs Cu3Si

A 630dpi dynamic LED display array in standard Si-based CMOS technology

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Science China(Information Sciences) 2012年第10期55卷 2409-2416页

作者： DONG Zan ,WANG Wei,HUANG BeiJu,ZHANG Xu,GUAN Ning & CHEN HongDa State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing China

A novel silicon light emitting diode(LED) display array has been fabricated using 0.35 μm standard CMOS *** this array,an LED and static random access memory(SRAM) are integrated together in a special *** SRAM in each pixel can store the state of the pixel and ensure that the pixel remains lit without persistent *** a result,the control logic is perfectly integrated on the same *** power sources are used to drive the display array because the LEDs operate at high voltage(supply voltage of 9 V),and the current of the whole display array is about 30-60 mA to display common *** display circuit includes digital control logic circuits and SRAM,and requires a supply voltage of 3.3 *** area of a single pixel is 40×40 μm 2,the area of the whole 16×16 LED array is 1 mm 2,and the display density is 630 dpi.

关键词： light emitting diode silicon-based CMOS technology display array