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Reverse current reduction of Ge photodiodes on Si without post-growth annealing

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Chinese Optics Letters 2009年第4期7卷 286-290页

作者： Sungbong Park Shinya Takita Yasuhiko Ishikawa Jiro Osaka Kazumi Wada Department of Materials Engineering University of Tokyo

A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to -10 mA/cm^2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented ＂non-thermal＂ approach to reduce reverse current should accelerate electronics-photonics convergence by using Oe on the Si complementary metal oxide semiconductor （CMOS） platform.

关键词： CMOS integrated circuits Electric fields Germanium Metals MOS devices Oxide semiconductors Photodiodes silicon silicon on insulator technology

Effect of Hydrogen Implantation on SIMOX SOI Materials

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Chinese Physics Letters 2004年第1期21卷 149-152页

作者：易万兵陈静陈猛王曦邹世昌 IonBeamLaboratory ShanghaiInstituteofMicrosystemandInformationTechnologyChineseAcademyofSciencesShanghai200050

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%–79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.

关键词： silicon on insulator technology

Compact and broadband waveguide taper based on partial bandgap photonic crystals

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Chinese Optics Letters 2009年第4期7卷 309-311页

作者：侯金郜定山吴华明周治平 Wuhan National Laboratory for Optoelectronics College of Optoelectronic Science and EngineeringHuazhong University of Science and Technology State Key Laboratory on Advanced Optical Communication Systems and Networks Peking University School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta

Partial bandgap characteristics of parallelogram lattice photonic crystals are proposed to suppress the radiation modes in a compact dielectric waveguide taper so as to obtain high transmittance in a large wavelength range. Band structure of the photonic crystals shows that there exists a partial bandgap, The photonie crystals with partial bandgap are then used as the cladding of a waveguide taper to reduce the radiation loss efficiently. In comparison with the conventional dielectric taper and the complete bandgap photonic crystal taper, the partial bandgap photonic crystal taper has a high transmittance of above 85% with a wide band of 170 nm.

关键词： Crystal atomic structure Energy gap Photonics silicon on insulator technology Waveguides

Performance testing of log pile photonic crystal fast-fabricated by direct femtosecond laser writing

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Chinese Optics Letters 2008年第11期6卷 864-867页

作者：杨海峰周明戴娟狄建科赵恩兰 Photonics Fabrication Science Center Jiangsu UniversityZhenjiang 212013

Great efforts has been made on fabricating photonic crystals （PCs） with photonic band gaps （PBGs） during the past decade. Three-dimensional （3D） log pile PC was fabricated fast by direct femtosecond laser writing in ORMOCER. Qualitative analysis of the errors of PC was investigated using the Image Pro Plus. Surface qualities such as bending, distortion, and surface roughness were shown, and the band gap in the infrared wavelength region was observed. Meanwhile, the theory was experimentally verified that the center of PBG diminishes as the crystal lattice period reduces. Therefore, it is possible to fabricate PCs whose band gap range is from the near-infrared to visible wave band.

关键词： Crystal atomic structure Crystallography Energy gap Gallium alloys Microcomputers Photonic band gap Photonics Piles Pulsed laser applications silicon on insulator technology Surface roughness Three dimensional Ultrashort pulses

Fabrication of Thermo-Optic Switch in silicon-on-insulator

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Chinese Physics Letters 2003年第12期20卷 2185-2187页

作者：王章涛夏金松樊中朝陈少武余金中 StateKeyLaboratoryonIntegratedOptoelectronics InstituteofSemiconductorsChineseAcademyofSciencesBeijing100083

silicon-on-insulator technology has been used to fabricate 2×2 thermo-optic switches. The switch shows crosstalk of -23.4dB and extinction ratio of 18.1dB in the bar-state. The switching speed is less than 30μs and the power consumption is about 420mW. The measured excess loss is 1.8dB. These merits make the switch more attractive for applications in wavelength division multiplexing.

关键词： silicon on insulator technology

Relation between EL2 Groupand EL6 Group in SI-GaAs

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Rare Metals 1996年第3期15卷 191-195页

作者：吴凤美赵周英南京大学物理系江苏南京电子部南京电子器件所江苏南京 210016

The annealing behavior for EL2 and EL6 groups as dominant deep levels in semi-insulating GaAs was presented using Photo Induced Transient Spectroscopy measurement (PITS). During rapid thermal annealing, a relation was identified between EL2 group at 0.79 and 0.82 eV and EL6 group at 0.24, 0.27 and 0.82 eV below the conduction band. It is found that they may be close in structure, and belong to the EL2 and EL6 groups, respectively. In rapidly annealed samples, the quantity of all defects in the EL2 group increases, while that in the EL6 group decreases. However, by furnace annealing at 950°C for 5 h, some of the defects in the EL2 group break up, and the quantity of all defects in the EL6 group increases. It is suggested that the EL2 group and EL6 group are related in their microscopy structures. The relation between the two groups and origins was also discussed.

关键词： Annealing Crystal defects Electron energy levels silicon on insulator technology Spectrometry

Design and fabrication of the star coupler based on SOI material

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Chinese Optics Letters 2003年第8期1卷 465-467页

作者：江晓清李柏阳唐衍哲杨建义王明华王文辉杨艺榕吴亚明王跃林 Department of Information Science and Electronic Engineering Zhejiang University Hangzhou 310027 State Key Laboratories of Transducer technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 Department of Information Science and Electronic Engineering Zhejiang University Hangzhou 310027State Key Laboratories of Transducer Technology Shanghai Institute of Microsystem andInformation Technology Chinese Academy of Sciences Shanghai 200050

A 1 x 25 star coupler is designed through calculation and beam propagation method (BPM) simulation. Improvement methods are focused on the design of the tapered waveguides in the device, improving the uniformity of the output light power of the star coupler. Utilizing the conventional Si process technology, the device is fabricated based on silicon-on-insulator (SOI) material. The test result shows that the star coupler has a perfect function of power splitting.

关键词： Optical fibers silicon on insulator technology Wave propagation Waveguides

SOI thermo-optic modulator with fast response

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Chinese Optics Letters 2003年第9期1卷 527-528页

作者：王小龙刘敬伟严清峰陈绍武余金中 Research Center for Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functions on a silicon wafer. In this letter, a 1 x 1 multimode interference (MMI) Mach-Zender interferometer (MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has an extinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response time is less than 30 us.

关键词： Interferometers Optoelectronic devices silicon on insulator technology

High-speed electrooptical VOA integrated in silicon-on-insulator

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Chinese Optics Letters 2003年第4期1卷 217-219页

作者：严清峰余金中夏金松刘忠立 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences Beijing 100083 Microelectronics R&D Center Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) integrated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption to achieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simulation tool PISCES-II were used to analyze the dc and transient characteristics of the device. The device has a response time (including rise time and fall time) less than 200 ns, much faster than the thermooptic and micro-electromechanical systems (MEMSs) based VOAs.

关键词： Attenuation Electrooptical effects silicon on insulator technology Waveguide attenuators