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Avalanche photodiodes on silicon photonics

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Journal of Semiconductors 2022年第2期43卷 11-23页

作者： Yuan Yuan Bassem Tossoun Zhihong Huang Xiaoge Zeng Geza Kurczveil Marco Fiorentino Di Liang Raymond G.Beausoleil Hewlett Packard Labs Hewlett Packard EnterpriseMilpitasCA 95035USA

silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated *** Ge-or III-V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication ***,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.

关键词： avalanche photodiode silicon photonics photonic integrated circuit

Quantum prospects for hybrid thin-film lithium niobate on silicon photonics

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Frontiers of Optoelectronics 2022年第1期15卷 73-79页

作者： Jeremy C.Adcock Yunhong Ding Center for silicon photonics for Optical Communication Technical University of Denmark2800 Kgs.LyngbyDenmark

photonics is poised to play a unique role in quantum technology for computation,communications and ***,integrated photonic circuits-with their intrinsic phase stability and high-performance,nanoscale components-offer a route to ***,each integrated platform has a unique set of advantages and pitfalls,which can limit their *** far,the most advanced demonstrations of quantum photonic circuitry has been in silicon ***,thin-film lithium niobate(TFLN)is emerging as a powerful platform with unique capabilities;advances in fabrication have yielded loss metrics competitive with any integrated photonics platform,while its large second-order nonlinearity provides efficient nonlinear processing and ultra-fast *** this short review,we explore the prospects of dynamic quantum circuits-such as multiplexed photon sources and entanglement generation-on hybrid TFLN on silicon(TFLN/Si)photonics and argue that hybrid TFLN/Si photonics may have the capability to deliver the photonic quantum technology of tomorrow.

关键词： Quantum photonics Quantum information Quantum communications Lithium niobate(LN) silicon photonics

silicon photonics for telecom and data‐com applications

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Opto-Electronic Advances 2020年第10期3卷 31-56页

作者： Kiyoshi Asakawa Yoshimasa Sugimoto Shigeru Nakamura Associate Program University of TsukubaTsukubaIbaraki 305-8571Japan. Nanotechnology Innovation Station National Institute for Materials Science(NIMS)1-2-1 SengenTsukubaIbaraki 305-0047Japan. Biometrics Research Laboratories NEC Corporation1131HinodeAbikoChiba 270-1198Japan.

In recent decades,silicon photonics has attracted much attention in telecom and data-com *** of high refractive-index contrast waveguides on silicon-on-insulator(SOI),a variety of integrated photonic passive and active devices have been implemented supported by excellent optical properties of silicon in the mid-infrared *** main advantage of the silicon photonics is the ability to use complementary metal oxide semiconductor(CMOS)process-compatible fabrication technologies,resulting in high-volume production at low *** the other hand,explosively growing traffic in the telecom,data center and high-performance computer demands the data flow to have high speed,wide bandwidth,low cost,and high energy-efficiency,as well as the photonics and electronics to be integrated for ultra-fast data transfer in *** practical applications,silicon photonics started with optical interconnect transceivers in the data-com first,and has been now extended to innovative applications such as multi-port optical switches in the telecom network node and integrated optical phased arrays(OPAs)in light detection and ranging(LiDAR).This paper overviews the progresses of silicon photonics from four points reflecting the recent advances mentioned ***-based silicon photonic platform technologies,applications to optical transceiver in the data-com network,applications to multi-port optical switches in the telecom network and applications to OPA in LiDAR system.

关键词： silicon photonics integration of photonics and electronics CMOS process-compatible fabrication optical interconnect transceiver optical multi-port switch optical phased array

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

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Advanced photonics 2021年第2期3卷 38-60页

作者： Abdul Rahim Artur Hermans Benjamin Wohlfeil Despoina Petousi Bart Kuyken Dries Van Thourhout Roel Baets Ghent University Photonics Research GroupDepartment of Information TechnologyGhentBelgium Ghent University IMEC and Center for Nano-and BiophotonicsGhentBelgium ADVA Optical Networking BerlinGermany

Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip *** scaling in data speed and span of the optical links demands modulators to be concurrently performant and *** photonics(SiPh),a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology,is well-positioned to deliver the performance,price,and manufacturing volume for the high-speed modulators of future optical communication *** has relied on the plasma dispersion effect,either in injection,depletion,or accumulation mode,to demonstrate efficient high-speed *** high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent *** years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh *** modulators are in the early years of their *** promise to extend the performance beyond the limits set by the physical properties of *** focus of our study is to provide a comprehensive review of contemporary(i.e.,plasma dispersion modulators)and new modulator implementations that involve the integration of novel materials with SiPh.

关键词： high-speed modulators silicon photonics plasma dispersion effect ferroelectrics graphene III-V on Si organic(electro-optic)materials.

Passive devices at 2 μm wavelength on 200 mm CMOS-compatible silicon photonics platform [Invited]

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Chinese Optics Letters 2021年第7期19卷 22-26页

作者：马辉杨浩天唐波魏茂良李钧颖吴江宏张鹏孙春雷李兰林宏焘 State Key Laboratory of Modern Optical Instrumentation College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310007China Institute of Microelectronics Chinese Academic SocietyBeijing 100029China Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of EngineeringWestlake UniversityHangzhou 310007China Institute of Advanced Technology Westlake Institute for Advanced StudyHangzhou 310023China

As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 μm *** development of the 2 μm silicon photonic platform mainly depends on the performance of passive *** this work, the passive devices were fabricated in the silicon photonic multi-project wafer *** designed micro-ring resonator with a 0.6 μm wide silicon ridge waveguide based on a 220 nm silicon-on-insulator platform achieves a high intrinsic quality factor of 3.0 × *** propagation loss is calculated as 1.62 d B/*** addition,the waveguide crossing, multimode interferometer, and Mach–Zehnder interferometer were demonstrated at 2 μm with good performances.

关键词： silicon photonics integrated photonics grating coupler multimode interferometer waveguide crossing

Optical signal processing based on silicon photonics waveguide Bragg gratings： review

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Frontiers of Optoelectronics 2018年第2期11卷 163-188页

作者： Saket KAUSHAL Rui Cheng Minglei Ma Ajay Mistry Maurizio Burla Lukas Chrostowski Jose Azana Institut National de la Recherche Scientifique Centre Energie Materiaux et Telecommunications (INRS-EMT) Varennes QC J3X 1 S2 Canada Department of Electrical and Computer Engineering University of British Columbia (UBC) Vancouver British Columbia V6T 1Z4 Canada Institute of Electromagnetic Fields ETH Zurich Gloriastrasse 35 Zurich 8092 Switzerland

This paper reviews the work done by research- ers at INRS and UBC in the field of integrated microwave photonics （IMWPs） using silicon based waveguide Bragg gratings （WBGs）. The grating design methodology is discussed in detail, including practical device fabrication considerations. On-chip implementations of various fun- darnental photonic signal processing units, including Fourier transformers, Hilbert transformers, ultrafast pulse shapers etc., are reviewed. Recent progress on WBGs- based IMWP subsystems, such as true time delay elements, phase shifters, real time frequency identification systems, is also discussed.

关键词： silicon photonics ultrafast optical signalprocessing integrated microwave photonics (IMWPs)

Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

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Journal of Semiconductors 2015年第12期36卷 1-13页

作者：陈弘达张赞黄北举毛陆虹张赞允 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Department of Electronics and Information Engineering Tianjin University School of Electronics and Information Engineering Tianjin Polytechnic University

silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits （OEICs） based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.

关键词： silicon photonics silicon LED grating coupler silicon modulator optoelectronic integrated circuits

On-chip wireless silicon photonics: from reconfigurable interconnects to lab-on-chip devices

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Light(Science & Applications) 2017年第1期6卷 517-527页

作者： Carlos García-Meca Sergio Lechago Antoine Brimont Amadeu Griol Sara Mas Luis Sánchez Laurent Bellieres Nuria S Losilla Javier Martí Nanophotonics Technology Center Universitat Politècnica de València46022 ValenciaSpain

Photonic integrated circuits are developing as key enabling components for high-performance computing and advanced networkon-chip,as well as other emerging technologies such as lab-on-chip sensors,with relevant applications in areas from medicine and biotechnology to *** demanding applications will require novel features,such as dynamically reconfigurable light pathways,obtained by properly harnessing on-chip optical *** this paper,we introduce a broadband,high directivity(4150),low loss and reconfigurable silicon photonics nanoantenna that fully enables on-chip radiation *** propose the use of these nanoantennas as versatile building blocks to develop wireless(unguided)silicon photonic devices,which considerably enhance the range of achievable integrated photonic *** examples of applications,we demonstrate 160 Gbit s−1 data transmission over mm-scale wireless interconnects,a compact low-crosstalk 12-port crossing and electrically reconfigurable pathways via optical beam ***,the realization of a flow micro-cytometer for particle characterization demonstrates the smart system integration potential of our approach as lab-on-chip devices.

关键词： integrated optics lab-on-a-chip devices nanoantenna sensing silicon photonics

On-chip light sources for silicon photonics

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Light(Science & Applications) 2015年第1期4卷 79-91页

作者： Zhiping Zhou Bing Yin Jurgen Michel State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer SciencePeking UniversityBeijing 100871China Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridgeMA 02139USA

Serving as the electrical to optical converter,the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been ***,we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength,pump condition,power consumption,and fabrication ***,the performance of each contender is also assessed with respect to thermal stability,which is a crucial parameter to consider in complex optoelectronic integrated circuits(OEICs)and optical ***,III-V-based silicon(Si)lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near ***,in the long term,direct hetero-epitaxial growth of III–V materials on Si seems more promising for low-cost,high-yield *** demonstration of high-performance quantum dot(QD)lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip *** superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density *** Germanium(Ge)-on-Si laser is also competitive for large-scale monolithic integration in the *** with a III-V-based Si laser,the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si ***,the versatility of Ge facilitates photon emission,modulation,and detection simultaneously with a simple process complexity and low cost.

关键词： on-chip light sources optical interconnections optoelectronic integrated circuit silicon photonics