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Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum conversion

Frontiers of Chemical Science and Engineering 2020年第6期14卷 997-1005页

作者： Yu Cao Xinyun Zhu Xingyu Tong Jing Zhou Jian Ni Jianjun Zhang Jinbo Pang Key Laboratory of Modem Power System Simulation and Control&Renewable Energy Technology Northeast Electric Power UniversityJilin 132012China School of Electrical Engineering Northeast Electric Power UniversityJilin 132012China School of Chemical Engineering Northeast Electric Power UniversityJilin 132012China Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin Institute of Photo-electronic Thin Film Devices and TechnologyCollege of Electronic Information and Optical EngineeringNankai UniversityTianjin 300350China Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong Institute for Advanced Interdisciplinary Research(iAIR)University of JinanJinan 250022China

Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost,less material consumption and easy mass *** them,micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber *** individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific *** this work,w e designed a nd simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet,green,red as well as near infrared range,respectively.B y tuning the G e content,the record efficiency of 24.80%has been realized with the typical quadruple junction structure of a-Si:H/a-Si0.9Ge0.1:H/μc-Si:H/μc-Si0.5Ge0.5:*** further reduce the material cost,thickness dependent device performances have been *** can be found that the design of total thickness of 4μm is the optimal device design in balancing the thickness a nd the *** the design of ultrathin quadruple junction device with total thickness of 2μm is the optimized device design regarding cost and long-term stability with a little bit more reduction in *** results indicated that our solar cells combine the advantages of low cost and high *** work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.

关键词： thin films solar cells quadruple junction solar cell amorphous silicon silicon germanium alloy quantum efficiency

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Thermoelectric properties of n-type SiGe alloys with Sn incorporation

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Rare Metals 2022年第12期41卷 4156-4163页

作者： Ke Meng La-Mei Zhao Ning-Yuan Zhang Zhuang-Fei Zhang Wei-Xia Shen Yue-Wen Zhang Biao Wan Chao Fang Liang-Chao Chen Qian-Qian Wang Ju-Long He Xiao-Peng Jia Key Laboratory of Material Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China State Key Laboratory of Metastable Materials Science and Technology Yanshan UniversityQinhuangdao 066004China

In the past several decades,silicon germanium(SiGe)bulk alloys have been a research focus in addressing the current global energy crisis and environmental pollution problems due to their excellent high-temperature thermoelectric *** this study,n-type Si_(80)Ge_(20)P_(2)Sn_(x)bulk alloys were fabricated by spark plasma sintering(SPS)to investigate the effect of Sn *** addition,the optimal sintering conditions and Sn content were *** introduction of Sn improves the electrical conductivity and power factor of the n-type SiGe bulk alloys due to the doping and composite ***,the Si_(80)Ge_(20)P_(2)Sn_(2)bulk alloy could reach a high figure of merit(ZT)value of~1.26 at 800℃.Thus,this work provides a quick preparation method for obtaining n-type SiGe bulk alloys with outstanding thermoelectric properties by incorporating Sn,which is favorable for large-scale production.

关键词： Thermoelectric material Spark plasma sintering(SPS) silicon germanium alloy Composite

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