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Raman investigation of air-stable silicene nanosheetson an inert graphite surface

Nano Research 2018年第11期11卷 5879-5889页

作者： Paola Castrucci Filippo Fabbri Tiziano Delise Manuela Scarselli Matteo Salvato Sara Paseale Roberto Francini Isabelle Berbezier Christoph Lechner Fatme Jardali Holger Vach Maurizio De Crescenzi Dipartimento di Fisica Universita di Roma 'Tor Vergata' Roma 00133 Italy Center for Nanotechnology Innovation c/o NEST Istituto Italiano di Tecnologia Pisa 55127 Italy Consorzio di Ricerca Hypatia c/o Italian Space Agency Roma O0133 Italy Dipartimento di Ingegnefia Industfiale Universita di Roma "For Vergata" Roma O0133 Italy CNRS Aix-Marseille UniversitY IM2NP UMR 7334 Marseille 13397 France EDF R&D Department Matefials and Mechanics of Components (MMC) Moret-sur-Loing 77818 France CNRS-LPICM Ecole Polytechnique Universitd Paris-Saclay Palaiseau 91128 France

The fascinating properties of two dimensional (2D) crystals have gained increasing interest for many applications. The synthesis of a 2D silicon structure, namely silicene, is attracting great interest for possible development of next generation electronic devices. The main difficulty in working with silicene remains its strong tendency to oxidation when exposed to air as a consequence of its relatively highly buckled structure. In this work, we univocally identify the Raman mode of air-stable low-buckled silicene nanosheets synthesized on highly oriented pyrolytic graphite (HOPG) located at 542.5 cm-1. The main focus of this work is Raman spectroscopy and mapping analyses in combination with ab initio calculations. Scanning tunneling microscopy images reveal the presence of a patchwork of Si three-dimensional (3D) clusters and contiguous Si areas presenting a honeycomb atomic arrangement, rotated by 30 degrees with respect to the HOPG substrate underneath, with a lattice parameter of 0.41 +/- 0.02 nm and a buckling of the Si atoms of 0.05 nm. Raman analysis supports the co-existence of 3D silicon clusters and 2D silicene. The Raman shift of low-buckled silicene on an inert substrate has not been reported so far and it is completely different from the one calculated for free-standing silicene and the ones measured for silicene grown on Ag(111) surfaces. Our experimental results are perfectly reproduced by our ab initio calculations of deposited silicene nanosheets. This leads us to conclude that the precise value of the observed Raman shift crucially depends on the strain between the silicene and the HOPG substrate.

关键词： 2D materials silicene Raman spectroscopy ab initio calculations scanning tunneling microscopy scanning tunneling spectroscopy

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Multifunctional silicene/CeO_(2)heterojunctions:Desirable electronic material and promising water-splitting photocatalyst

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Chinese Chemical Letters 2022年第8期33卷 3947-3950页

作者： Liang Xu Jian Zeng Quan Li Xin Luo Tong Chen Jingjing Liu Ling-Ling Wang Energy Materials Computing Center School of Energy and Mechanical EngineeringJiangxi University of Science and TechnologyNanchang 330013China Department of Applied Physics School of ScienceEast China Jiaotong UniversityNanchang 330013China Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education School of Physics and ElectronicsHunan UniversityChangsha 410082China

The first-principles calculations demonstrate that covalently bonded(cb)heterojunction and van der Waals(vd W)heterojunction can coexist in silicene/CeO_(2) heterojunctions,due to the different stacking ***,the cb heterojunction with band gap of 1.97 e V,forms a type-II heterojunction,exhibits good redox performance and has high-effective optical absorption spectra,thus it is a promising photocatalyst for overall water ***,for the vd W heterojunction,the Dirac cone of silicene is well kept on CeO_(2) semiconducting substrate,with a considerable energy gap of 0.43 e V,which can be an ideal material in building silicene-based electronic *** results may open a new gateway in both of nanoelectronic device and energy conversion for silicene/Ce O2 nanocomposites.

关键词： silicene CeO_(2) Photocatalyst Interfacial interaction Dirac cone

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Spin and valley half metal induced by staggered potential and magnetization in silicene

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Chinese Physics B 2014年第1期23卷 379-383页

作者：汪萨克田宏玉杨永宏汪军 Department of Physics Southeast University Nanjing 210096 China

We investigate the electron transport in silicene with both staggered electric potential and magnetization; the latter comes from the magnetic proximity effect by depositing silicene on a magnetic insulator. It is shown that the silicene could be a spin and valley half metal under appropriate parameters when the spin–orbit interaction is considered; further, the filtered spin and valley could be controlled by modulating the staggered potential or magnetization. It is also found that in the spin-valve structure of silicene, not only can the antiparallel magnetization configuration significantly reduce the valve-structure conductance, but the reversing staggered electric potential can cause a high-performance magnetoresistance due to the spin and valley blocking effects. Our findings show that the silicene might be an ideal basis for the spin and valley filter analyzer devices.

关键词： silicene spin–orbit interaction spin and valley half metal spin and valley blocking effect

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Spin-current pump in silicene

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Chinese Physics B 2018年第5期27卷 500-503页

作者： John Tombe Jada Marcellino Mei-Juan Wang Sa-Ke Wang Jun Wang Department of Physics Southeast UniversityNanjing 210096China Department of Fundamental Courses Jinling Institute of TechnologyNanjing 211169China

We report a theoretical study of pumped spin currents in a silicene-based pump device,where two time-dependent staggered potentials are introduced through the perpendicular electric fields and a magnetic insulator is considered in between the two pumping potentials to magnetize the Dirac *** is shown that giant spin currents can be generated in the pump device because the pumping can be optimal for each transport mode,the pumping current is *** controlling the relevant parameters of the device,both pure spin currents and fully spin-polarized currents can be *** results may shed a new light on the generation of pumped spin currents in Dirac-electron systems.

关键词： spin currents charge pump quantization silicene

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Honeycomb silicon: a review of silicene

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Science Bulletin 2015年第18期60卷 1551-1562页

作者： Jincheng Zhuang Xun Xu Haifeng Feng Zhi Li Xiaolin Wang Yi Du Institute for Superconducting and Electronic Materials (ISEM) University of Wollongong

silicene, a new allotrope of silicon in a twodimensional honeycomb structure, has attracted intensive research interest due to its novel physical and chemical properties. Unlike carbon atoms in graphene, silicon atoms prefer to adopt sp2/sp3-hybridized state in silicene,enhancing chemical activity on the surface and allowing tunable electronic states by chemical functionalization. The silicene monolayers epitaxially grown on Ag(111) surfaces demonstrate various reconstructions with different electronic structures. In this article, the structure, phonon modes, electronic properties, and chemical properties of silicene are reviewed based on theoretical and experimental works in recent years.

关键词： silicene Electronic states Chemicalfunctionalization

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Observation of a Flat Band in silicene

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Chinese Physics Letters 2014年第12期31卷 103-106页

作者：冯娅冯宝杰谢卓晋黎文彬刘旭刘德发赵林陈岚周兴江吴克辉 Institute of Physics Chinese Academy of Sciences Beijing 100190

Flat bands that exhibit weak band dispersion in crystals can host heavy fermions that are cru- cial to many strongly correlated phenomena, such as ferromagnetism and superconductivity. For topologically trivial flat bands, theories have proven the stability of the ferromagnetic ground state i.e., flat band ferromagnetism. In the presence of weak disorders, systems with flat bands are expected to exhibit unconventional Anderson localization due to the lifting of degeneracy. More interestingly, flat bands with nontrivial topology, i.e., topological flat bands, are expected to host a fractional quantum Hall effect at zero magnetic field. Hence, searching for topologically trivial/nontrivial flat bands （TFB） has been an interesting while challenging task so far.

关键词： Observation Flat Band silicene

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Current-induced pseudospin polarization in silicene

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Chinese Physics B 2014年第9期23卷 539-543页

作者：王磊朱国宝 Department of Physics and Electronic Engineering Heze University

The pseudospin polarization induced by an external electric field in silicene in the presence of weakly spin- independent impurities is considered theoretically in the linear response regime based on Green＇s function method. We study the effects of the interplay between the sublattice potential and the intrinsic spin orbit coupling on the pseudospin polarization. We show that the pseudospin polarization perpendicular to the electric field is independent of the impurity parameter, while the pseudospin polarization in the direction of the electric field is sensitive to the impurity parameter. The dependences of the pseudospin polarizations on the chemical potential are studied.

关键词： silicene pseudospin polarization Green's function

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Construction of twisted graphene–silicene heterostructures

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Nano Research 2023年第5期16卷 7926-7930页

作者： Guangyuan Han Huan Shan Lizhi Zhang Wenpeng Xu Zhao-Yan Gao Hui Guo Geng Li Hong-Jun Gao Beijing National Center for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China National Center for Nanoscience and Technology Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

Van der Waals stacking of two-dimensional crystals with rotation or mismatch in lattice constants gives rise to rich physical phenomena that are closely related to the strong correlations and band *** graphene and silicene heterobilayers have been theoretically predicted to host a tunable transport gap due to the mismatch of Dirac cones in the graphene and silicene ***,experimental realization of such twisted structure is ***,we report the formation of twisted graphene/silicene bilayers on Ru(0001)crystal via *** moirépatterns form as single-crystalline graphene grows over different grains of the Ru *** silicon intercalation,graphene/silicene bilayers are observed with different twisting angles on top of different grains of the Ru *** work provides a new pathway towards construction of graphene based twisted heterobilayers.

关键词： twisted heterobilayers graphene silicene scanning tunneling microscopy first-principles calculations

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Band structure of monolayer of graphene, silicene and silicon-carbide including a lattice of empty or filled holes

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Journal of Semiconductors 2018年第8期39卷 10-19页

作者： N.Nouri G.Rashedi Department of Physics Faculty of Sciences University of Isfahan

We have developed a π-orbital tight-binding Hamiltonian model taking into account the nearest neighbors to study the effect of antidot lattices(two dimensional honeycomb lattice of atoms including holes) on the band structure of silicene and silicon carbide(SiC) sheets. We obtained that the band structure of the silicene antidot superlattice strongly depends on the size of embedded holes, and the band gap of the silicene antidot lattice increases by increasing of holes diameter. The band gap of SiC antidot lattice, except for the lattice of the small unit cell, is independent of the holes diameter and also depends on the distance between holes. We obtained that, the band gap of the SiC antidot lattice is the same as the band gap of the corresponding sheet without hole. Also, the electronic properties of the SiC antidot superlattice occupied either by carbon or by silicon atoms are investigated,numerically. Furthermore, we study the effect of occupation of graphene antidot by Si atoms and vice versa. Also,we have calculated the band structure of graphene and silicene antidot lattice filled by Si + C atoms. Finally, we compute the band structure of the SiC antidot lattice including the holes which are filled by C or by Si ***, in this paper we have generalized the method of paperabout graphene antidot with empty holes to the cases of filled holes by different atoms and also to the case of silicene and silicon carbide antidot lattices.

关键词： tight binding band structure antidot graphene silicene SiC

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Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene

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Journal of Semiconductors 2019年第6期40卷 36-42页

作者： Naili Yue Joshua Myers Liqin Su Wentao Wang Fude Liu Raphael Tsu Yan Zhuang Yong Zhang Department of Electrical and Computer Engineering The University of North Carolina at Charlotte Charlotte North Carolina 28223 USA Department of Electrical Engineering Wright State University Dayton OH 45435 USA Department of Mechanical Engineering The University of Hong Kong Hong Kong China

We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a single crystalline Si Raman mode at around 520 cm^-1, a STM image of an ordered surface structure under ambient condition, and a Schottky junction with graphite. Ultra-thin silicon regions exhibit silicene-like behavior, including a Raman mode at around 550 cm^-1, a triangular lattice structure in STM that has distinctly different lattice spacing from that of either graphene or thicker Si, and metallic conductivity of up to 500 times higher than that of graphite. This work suggests a bottom-up approach to forming a Si nanostructure array on a large-scale patterned graphene substrate that can be used to fabricate nanoscale Si electronic devices.

关键词： silicene silicon Raman STM epitaxial growth oxidation

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