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Numerical Simulation of PMM Tests for A Ship in Close Proximity to sidewall and Maneuvering Stability Analysis

China Ocean Engineering 2016年第6期30卷 884-897页

作者：刘晗马宁顾解忡 School of Naval Architecture Ocean&Civil EngineeringShanghai Jiao Tong University State Key Laboratory of Ocean Engineering Shanghai Jiao Tong University Collaborative Innovation Center for Advanced Ship and Deep-Sea Exploration Shanghai Jiao Tong University

As the maneuverability of a ship navigating close to a bank is influenced by the sidewall, the assessment of ship maneuvering stability is important. The hydrodynamic derivatives measured by the planar motion mechanism （PMM） test provide a way to predict the change of ship maneuverability. This paper presents a numerical simulation of PMM model tests with variant distances to a vertical bank by using unsteady RANS equations. A hybrid dynamic mesh technique is developed to realize the mesh configuration and remeshing of dynamic PMM tests when the ship is close to the bank. The proposed method is validated by comparing numerical results with results of PMM tests in a circulating water channel. The first-order hydrodynamic derivatives of the ship are analyzed from the time history of lateral force and yaw moment according to the multiple-run simulating procedure and the variations of hydrodynamic derivatives with the ship-sidewall distance are given. The straight line stability and directional stability are also discussed and stable or unstable zone of proportional-derivative （PD） controller parameters for directional stability is shown, which can be a reference for course keeping operation when sailing near a bank.

关键词： sidewall effect numerical simulation planar motion mechanism (PMM) hybrid dynamic mesh technique ship maneuvering stability

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Experimental study on influence of boundary on location of maximum velocity in open channel flows

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Water Science and Engineering 2011年第2期4卷 185-191页

作者： Jing YAN Hong-wu TANG Yang XIAO Kai-jie LI Zhi-Jun TIAN State Key Laboratory of Hydrology-Water Resources and Hydraulic Engineering Hohai University Nanjing 210098 P. R. China National Engineering Research Center of Water Resources Efficient Utilization and Engineering Safety Nanjing 210098 P. R. China College of Water Conservancy and Hydropowe. Hohai University Nanjing 210098 P. R. China

The velocity dip phenomenon may occur in a part of or in the whole flow field of open channel flows due to the secondary flow effect. Based on rectangular flume experiments and the laser Doppler velocimetry, the influence of the distance to the sidewall and the aspect ratio on the velocity dip is investigated. Through application of statistical methods to the experimental results, it is proposed that the flow field may be divided into two regions, the relatively strong sidewall region and the relatively weak sidewall region. In the former region, the distance to the sidewall greatly affects the location of maximum velocity, and, in the latter region, both the distance to the sidewall and the aspect ratio influence the location of the maximum velocity.

关键词： velocity dip open channel flow location of maximum velocity sidewall effect aspect ratio

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Structure Design Considerations of a Sub-50nm Self-Aligned Double-Gate MOSFET

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Journal of Semiconductors 2002年第12期23卷 1267-1274页

作者：殷华湘徐秋霞中国科学院微电子中心北京100029

A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is *** this way,the gate length and thickness of Si island of DG device show many different scaling limits for various ***,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in *** DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of V th .Finally,a guideline to make a SADG MOSFET is presented.

关键词： double gate MOSFET structure design sidewall effect SCD

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