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Identifying the enhancement mechanism of Al/MoO_(3) reactive multilayered films on the ignition ability of semiconductor bridge using a one-dimensional gas-solid two-phase flow model

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Defence Technology（防务技术） 2024年第3期33卷 168-179页

作者： Jianbing Xu Yuxuan Zhou Yun Shen Yueting Wang Yinghua Ye Ruiqi Shen School of Chemistry and Chemical Engineering Nanjing University of Science and TechnologyNanjing 210094China Micro-Nano Energetic Devices Key Laboratory of MIIT Nanjing 210094China Institute of Space Propulsion Nanjing University of Science and TechnologyNanjing 210094China

Energetic semiconductor bridge(ESCB)based on reactive multilayered films(RMFs)has a promising application in the miniature and intelligence of initiator and pyrotechnics *** the ignition enhancement mechanism of RMFs on semiconductor bridge(SCB)during the ignition process is crucial for the engineering and practical application of advanced initiator and pyrotechnics *** this study,a one-dimensional(1D)gas-solid two-phase flow ignition model was established to study the ignition process of ESCB to charge particles based on the reactivity of Al/MoO_(3) *** order to fully consider the coupled exothermic between the RMFs and the SCB plasma during the ignition process,the heat release of chemical reaction in RMFs was used as an internal heat source in this *** is found that the exothermal reaction in RMFs improved the ignition performance of *** the process of plasma rapid condensation with heat release,the product of RMFs enhanced the heat transfer process between the gas phase and the solid charge particle,which accelerated the expansion of hot plasma,and heated the solid charge particle as well as gas phase region with low *** addition,it made up for pressure loss in the gas *** the plasma dissipation process,the exothermal chemical reaction in RMFs acted as the main heating source to heat the charge particle,making the surface temperature of the charge particle,gas pressure,and gas temperature rise *** result may yield significant advantages in providing a universal ignition model for miniaturized ignition devices.

关键词： Ignition enhancement mechanism 1D gas-solid two-phase flow Al/MoO_(3)reactive multilayered films semiconductor bridge Miniaturized ignition device

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Structural Damage Law of semiconductor bridge Detonator under Impact and Overload Environment

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Journal of Beijing Institute of Technology 2020年第2期29卷 190-194页

作者： Dongxiao Fu Rui Zhang Hu Liu Fang Li Zhenhua Du Hongliang Ma School of Electrical Engineering Xi’an Jiaotong UniversityXi’an 710049China State Key Laboratory of Applied Physics-Chemistry Shaanxi Applied Physics-Chemistry Research InstituteXi’an 710061China

Aiming to know the requirement of penetrating the munition semiconductor bridge detonator under the impact overload environment, the impact overload simulation device and the structural finite element software ANSYS/AUTODYN are used to study the variation of the axial dimension, charge and the chip gap of the semiconductor bridge detonator under the impact overload environment. The typical semiconductor bridge detonator is affected by the acceleration, and the strain increases with the increase of the acceleration. The semiconductor bridge detonator shows axial compression, in which the size becomes smaller, and the structural deformation occurs at the output end of the semiconductor bridge detonator. The typical semiconductor bridge detonator is elastically deformed when the acceleration is less than 40 000 g. When the acceleration is more than40 000 g, the semiconductor bridge detonator housing is plastically deformed. The gap between the drug column and the chip is divided into three stages with the increase of the acceleration. Initially,with the increase of the acceleration, the gap rises rapidly until the acceleration reaches 43 000 g,and when the gap reaches the maximum, the gap decreases rapidly with the increase of the acceleration. When the acceleration reaches 57 000 g, the gap tends to be 0 μm in the initial state, and then the gap does not change with the acceleration to keep tending to 0 μm.

关键词： impact overload semiconductor bridge detonator structural damage

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Experimental Study on Plasma Temperature of semiconductor bridge

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Defence Technology（防务技术） 2012年第1期8卷 35-40页

作者：吴蓉朱顺官张琳李燕冯红艳 Department of Chemistry and Material Science Chaohu University School of Chemical Engineering Nanjing University of Science & Technology School of Chemistry and Material Science University of Science and Technology of China

The plasma temperature of the semiconductor bridge (SCB) was measured in real-time according to relative intensity ratio of dual lines of atomic emission *** plasma temperature under different discharge pulses and the influence of discharge pulse energy on it were *** results show that the plasma peak temperature rises gradually with the increase of initial discharging voltage and charging *** the capacitance of 22 μF,if the initial discharging voltage increases from 21 V to 63 V,the plasma peak temperature rises from 2 000 K to 6 200 *** the discharging voltage of 39 V,the peak temperature rises from 2 200 K to 3 800 K when the capacitance increases from 6.8 μF to 100 μ*** change of pulse discharge has a very small effect on the plasma temperature at the late time discharge (LTD).In view of the change of plasma temperature with the pulse energy,the discharging voltage has a greater effect on the plasma temperature than the *** results provide some experimental basis for the further research on SCB ignition and detonation mechanisms.

关键词： plasma physics semiconductor bridge plasma temperature atomic emission spectrometry discharge pulse

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