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Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOvPE

Chinese Physics B 2016年第4期25卷 418-421页

作者：韩东岳李辉杰赵桂娟魏鸿源杨少延汪连山 Key Laboratory of Semiconductor materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor materials and Devices Institute of Semiconductors Chinese Academy of Sciences

The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOvPE） are investigated. It is found that the aluminum content in A-plane A1GaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the v/Ⅲ ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the A1GaN films, especially nonpolar A1GaN epilayers.

关键词： metalorganic chemical vapor deposition nitrides semiconducting iii-v materials semiconduct- ing ternary compounds

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Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)

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Science China(Technological Sciences) 2012年第11期55卷 3200-3203页

作者： GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui XIE ZiLi School of Electronic Science and Engineering Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210093China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Photoluminescence properties of highly p＋-doped GaASl_ySby are investigated. Band gap narrowing （BGN） effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg（GaAsl_ySby）=l.25y2-1.95y＋1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K. Fermi level （El） and full width at half maximum （FWHM） of photolumines- cence increase with antimony mole fraction. The increase of Fermi level is attributed to hole mass of GaAsl_ySby decrease which is resulted from antimony composition increase. The increase of Fermi level means that more electrons participate in in- direct transition to result in FWHM increases.

关键词： molecular beam epitaxy photoluminescence semiconducting iii-v materials

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Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations

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Journal of Semiconductors 2022年第2期43卷 59-65页

作者： Xianchun Peng Jie Sun Huan Liu Liang Li Qikun Wang Liang Wu Wei Guo Fanping Meng Li Chen Feng Huang Jichun Ye Ningbo Institute of materials Technology and Engineering Chinese Academy of SciencesNingbo 315201China Faculty of materials Science and Chemical Engineering Ningbo UniversityNingbo 315211China State Key Laboratory of Advanced Special Steel Shanghai Key Laboratory of Advanced Ferrous MetallurgySchool of Materials Science and EngineeringShanghai UniversityShanghai 200044China Ultratrend Technologies Inc. Hangzhou 311199China

AlN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering *** in-fluence of high-temperature thermal annealing(HTTA)on the structural,optical properties as well as surface stoichiometry were comprehensively *** significant narrowing of the(0002)diffraction peak to as low as 68 arcsec of AlN after HTTA implies a reduction of tilt component inside the AlN thin films,and consequently much-reduced dislocation *** is also supported by the appearance of E2(high)Raman peak and better Al-N stoichiometry after ***,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption *** is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AlN regardless of sapphire orienta-tion.

关键词： nitrides physical vapor deposition processes semiconducting iii-v materials defects

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