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selective growth of wide band gap atomically thin Sb2O3 inorganic molecular crystal on WS2

Nano Research 2019年第11期12卷 2781-2787页

作者： Guangzhuang Sun Bo Li Shifa Wang Zhengwei Zhang Jia Li Xidong Duan Xiangfeng Duan State Key Laboratory for Chemo/Biosensing and Chemometrics and Hunan Key Laboratory of Two Dimensional Materials College of Chemistry and Chemical EngineeringHunan UniversitChangsha 410082China Department of Applied Physics School of Physics and ElectronicsHunan UniversityChangsha 410082China School of Electronic and Information Engineering Chongqing Three Gorges UniversityChongqing Wanzhou 404000China Department of Chemistry and Biochemistry University of CaliforniaLos AngelesCalifornia 90095USA

Heterostructures combined by different individual two-dimensional(2D)materials are essential building blocks to realize unique electronic,optoelectronic properties and multifunctional *** date,the direct growth of 2D/2D atomic van der Waals heterostructures(vdWHs)have been extensively ***,the heterostructures from 2D inorganic molecular crystals and atomic crystals have been rarely *** we report two-step direct epitaxial growth of the inorganic molecular-atomic Sb2O3/WS2 *** thickness of Sb2O3 nanosheets on WS2 nanosheets can be tuned by variable growth *** growth behavior of Sb2O3 on WS2 was determined through *** images,Raman spectra,Raman mappings and selected-area electron diffraction(SAED),etc.,reveal that Sb2O3/WS2 heterostructures are vertically stacked with high crystal *** transport measurements demonstrate that the heterotransistors based on the heterostructures possess high current on/off ratio of 5 × 10^5,obvious gate-tunable and current rectification output *** characterizations show that the heterostructures have a clear photoresponse with high responsivity of 16.4 *** growth of vdWHs from 2D inorganic molecular-atomic crystals may open up new opportunities in 2D functional electronics and optoelectronics.

关键词： vapor phase epitaxy selective growth Sb2O3/WS2 heterostructures band alignment rectification effect

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selective growth of ZnO Nanorods on SiO2/Si Substrates Using a Graphene Buffer Layer

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Nano Research 2011年第5期4卷 440-447页

作者： Won Mook Choi Kyung-Sik Shin Hyo Sug Lee Dukhyun Choi Kihong Kim Hyeon-Jin Shin Seon-Mi Yoon Jae-Young Choi Sang-Woo Kim Samsung Advanced Institute of Technology Giheung Yongin Gyeonggi 446-712 Republic of Korea School of Advanced Materials Science and Engineering Sungkyunkwan （SKKU） Advanced Institute of Nanotechnology （SAINT） Center for Human Interface Nanotechnology （HINT） Sungkyunkwan University Suwon 440-746 Republic of Korea Department of Mechanical Engineering Kyung Hee University Yongin Gyeonggi 446-701 Republic of Korea

A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO-graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO-graphene materials have promising applications in future flexible electronic and optical devices.

关键词： Graphene ZnO nanorod heterojunction selective growth solution

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selective growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate

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Chemical Research in Chinese Universities 2014年第4期30卷 556-559页

作者： YANG Dechao LIANG Hongwei QIU Yu LI Pengchong LIU Yang SHEN Rensheng XIA Xiaochuan YU Zhennan CHANG Yuchun ZHANG Yuantao DU Guotong State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 P. R. China Department of Electronic Engineering Dalian Neusoft University of Information Dalian 116024 P. R. China School of Physics and Optoelectronic Technology Dalian University of Technology Dalian 116024 P. R. China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 P. R. China Zhejiang Crystal-optech Co. Ltd. Taizhou 318015 P. R. China

Cone-shaped patterned sapphire substrate was prepared by inductively coupled plasma etching and GaN nucleation layer was grown on it by metal-organic chemical vapor deposition.A selective growth of GaN nucleation layer was found on the slope of the cone-shaped patterned sapphire substrat,and the distribution morphology of GaN had significantly changed after it was *** selective growth and redistribution were analyzed by investigating the distribution of crystallographic planes on the cone surface and the atom array of specific planes at atom level.

关键词： Patterned sapphire substrate GaN selective growth Crystallographic plane

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Highly selective growth of(6,5)single-walled carbon nanotubes from sigma phase alloy catalyst

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Nano Research 2024年第3期17卷 1999-2003页

作者： Liantao Xin Chen Ma Qianru Wu Shaokang Liu Linhai Li Xiuyun Zhang Liu Qian Maoshuai He Dong Li Fangqian Han Shulan Hao Lihu Feng Yahan Li Huaping Liu Lili Zhang Chang Liu Jin Zhang College of Chemistry and Molecular Engineering Qingdao University of Science and TechnologyQingdao 266042China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China College of Physics Science and Technology Yangzhou UniversityYangzhou 225002China Center for Nanochemistry Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China

The chirality structure of a single-walled carbon nanotube(SWNT)strongly depends on the composition of catalyst used in the chemical vapor deposition *** this study,we develop a porous magnesia supported manganese-rhenium(MnRe/MgO)catalyst for chirality-selective synthesis of *** characterizations reveal that(6,5)tubes with a selectivity higher than 70%are grown from the Re-rich MnRe/MgO *** comparing the SWNT growth results with those of monometallic Mn or Re,the formation of sigma phase,an intermetallic compound occurring in transition-metal alloy systems,is revealed to be crucial for the dominant synthesis of(6,5)*** work not only extends the application of sigma phase alloy for catalytic synthesis of SWNTs,but also sheds lights on the growth of SWNTs with a high chirality selectivity.

关键词： single-walled carbon nanotubes sigma phase manganese-rhenium catalyst selective growth transition-metal alloy

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Unlocking the potential of ultra-thin two-dimensional antimony materials:selective growth and carbon coating for efficient potassium-ion storage

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Journal of Energy Chemistry 2024年第5期92卷 440-449页

作者： Dongyu Zhang Zhaomin Wang Yabin Shen Yeguo Zou Chunli Wang Limin Wang Yong Cheng State Key Laboratory of Rare Earth Resource Utilization Changchun Institute of Applied ChemistryChinese Academy of Sciences(CAS)Changchun 130022JilinChina School of Applied Chemistry and Engineering University of Science and Technology of ChinaHefei 230026AnhuiChina

Antimony-based anodes have attracted wide attention in potassium-ion batteries due to their high theoretical specific capacities(∼660 mA h g^(-1))and suitable voltage ***,severe capacity fading caused by huge volume change and limited ion transportation hinders their practical ***,strategies for controlling the morphologies of Sb-based materials to improve the electrochemical performances have been *** these,the two-dimensional Sb(2D-Sb)materials present excellent properties due to shorted ion immigration paths and enhanced ion ***,the synthetic methods are usually tedious,and even the mechanism of these strategies remains elusive,especially how to obtain large-scale 2D-Sb ***,a novel strategy to synthesize 2D-Sb material using a straightforward solvothermal method without the requirement of a complex nanostructure design is *** method leverages the selective adsorption of aldehyde groups in furfural to induce crystal growth,while concurrently reducing and coating a nitrogen-doped carbon *** to the reported methods,it is simpler,more efficient,and conducive to the production of composite nanosheets with uniform thickness(3–4 nm).The 2D-Sb@NC nanosheet anode delivers an extremely high capacity of 504.5 mA h g^(-1) at current densities of 100 mA g^(-1) and remains stable for more than 200 *** characterizations and molecular dynamic simulations,how potassium storage kinetics between 2D Sb-based materials and bulk Sb-based materials are explored,and detailed explanations are *** findings offer novel insights into the development of durable 2D alloy-based anodes for next-generation potassium-ion batteries.

关键词： Antimony Two-dimensional materials selective growth Nitrogen-doped carbon Potassium-ion batteries

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Screwdriver-like Pd-Ag heterostructures formed via selective deposition of Ag on Pd nanowires as efficient photocatalysts for solvent-free aerobic oxidation of toluene

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Nano Research 2020年第3期13卷 646-652页

作者： Caihong He Lingli Yu Na Lu Wenjing Wang Wei Chen Shaojie Lu Yun Yang Dekun Ma Shaoming Huang Key Laboratory of Carbon Materials of Zhejiang Province College of Chemistry and Materials EngineeringWenzhou University Wenzhou 325035China School of Materials and Energy Guangdong University cf TechnologyGuangzhou 510006China

Heterostructured bimetal nanocrystals with a component having localized surface plasmon resonance(LSPR)property are promising photocatalysts for a series of *** this work,kinetic products of Pd-Ag with a screwdriver-like heterostructure have been successfully fabricated via the selective epitaxial growth of Ag on Pd nanowires(NWs).It was confirmed that the deposition rate(Vdeposition)of Ag is much more sensitive to the temperature,compared to the surface diffusion rate(Vdiffusion)which can be effectively reduced by the binding of poly(vinylpyrrolidone)(PVP)*** the magnitude of Vdeposition/Vdiffusion has been well tailored for the formation of a kinetic growth *** interactions between the components of the as-prepared Pd-Ag heterostructures resulted in intensified LSPR *** a result,they gained better photocatalytic performance toward solvent free aerobic oxidation of toluene than Pd NWs,Ag NWs and the mixture of ***,the Pd-Ag heterostructured nanocrystals exhibited excellent catalytic stability for *** work not only presents an idea for realizing kinetic growth but also supports that LSPR effect is a good tool for improving the photocatalytic activity.

关键词： heterostructure selective growth kinetics aerobic oxidation reaction

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Rational distribution of Ru nanodots on 2D Ti_(3−x)C_(2)T_(y)/g-C_(3)N_(4)heterostructures for boosted photocatalytic H_(2)evolution

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Nano Research 2023年第5期16卷 6652-6660页

作者： Wen-Jing Yi Xin Du Meng Zhang Sha-Sha Yi Rui-Hao Xia Chuan-Qi Li Yan Liu Zhong-Yi Liu Wen-Lei Zhang Xin-Zheng Yue College of Chemistry Zhengzhou UniversityZhengzhou 450001China School of Materials Science and Engineering Zhengzhou UniversityZhengzhou 450001China

Incorporating metal nanodots(NDs)into heterostructures for high charge separation and transfer capacities is one of the most effective strategies for improving their photocatalytic ***,controlling the space distribution of metal NDs for optimizing charge transport pathways remains a significant challenge,particularly in two-dimensional(2D)face-to-face ***,we develop a simple targeted self-reduction strategy for selectively loading Ru NDs onto the Ti_(3−x)C_(2)T_(y)(TC)surface of 2D TC/g-C_(3)N_(4)(CN)heterojunction based on the reductive Ti vacancy defects creatively increased during the preparation of TC/CN by reducing ***,the optimized Ru/TC/CN photocatalyst exhibits an outstanding H_(2)evolution rate of 3.21 mmol·g^(−1)·h^(−1)and a high apparent quantum efficiency of 30.9%at 380 nm,which is contributed by the unidirectional transfer of the photogenerated electrons from CN to Ru active sites(CN→TC→Ru)and the suppressed backflow of electrons from Ru sites to CN,as revealed by comprehensive characterizations and density functional theory(DFT)*** work provides a novel strategy for synthesizing the highly efficient photocatalysts with a controllable charge transfer paths,which will boost the development of photocatalysis.

关键词： Ru/Ti_(3−x)C_(2)T_(y)/g-C_(3)N_(4) targeted self-reduction strategy selective growth unidirectional electron migration photocatalytic H_(2)evolution

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Plasmon-directed polymerization:Regulating polymer growth with light

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Nano Research 2018年第12期11卷 6384-6390页

作者： Yunxia Wang Shuangshuang Wang Shunping Zhang Oren A.Scherman Jeremy J.Baumberg Tao Ding Hongxing Xu Key Laboratory of Artificial Micro-and Nano-structures Of Ministry of Education of China School of Physics and Technologywuhan UniversityWuhan 430072China Nanophotonics Centre Cavendish LaboratoryUniversity of CambridgeCambridgeCB30HEUK Department of Chemistry University of CambridgeLensfield RoadCambridgeCB2I EWUK

Plasmon-induced polymerization can facilitate the site-selectivity and orientation of polymer growth, which enriches the toolbox of polymerization and nanofabrication. Here, we demonstrate plasmon-induced polymerization, accomplished by low-power laser excitation of gold nanoparticles (NPs). We selectively control the growth of polymers around single plasmonic NPs while monitoring the polymerization using dark field spectroscopy and subsequent scanning electron microscopy. This plasmon-induced polymerization, generated by hot electron initiation, not only precisely controls the thickness and composition of the polymer coatings but also regulates the location and orientation of the growth, which are strongly influenced by the laser polarization and near-field distribution around the plasmonic NPs. A saturation increase in the polymer thickness provides a strong support for our mechanism. This facile approach of nanoscale polymerization directed by light not only provides new opportunities in nanosynthesis and nanofabrication for functional devices, but also opens many routes for polymer physics and chemistry at the nanoscale level.

关键词： hot electrons plasmons polarization selective growth

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Hydrothermal Synthesis and Field Enhancement Behavior of ZnO Nanorods Pattern

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Chinese Journal of Chemical Physics 2011年第6期24卷 753-758,I0004页

作者：汤儆杜琳庞文辉郑晶晶田小春庄金亮福州大学化学化工学院教育部暨福建省食品安全和分析检测重点实验室福州350108 法兰克福大学无机及分析化学研究所法兰克福60325

We provide a new way to prepare ZnO nanorods pattern from the solution composed of hexamethylenetetramine （HMT） and Zn（NO3）2. The substrate is ITO substrate covered by well ordered Au islands. Since Au and the underneath ITO substrate have two different nucleation rates in the initial stage of heterogeneous nucleation process, the subsequent ZnO growth on the quick nucleating area takes place under diffusion control and is able to confine the synthesis of ZnO nanorods to specific locations. The concentrations of zinc nitrate and HMT are well adjusted to show the possibility of the new route for the patterning of the ZnO nanorods. Furthermore, the nanorods pattern was characterized by X-ray diffraction and photoluminescence and the performance of field emission property from ZnO nanorod patterns was investigated. The ZnO nanorods pattern with a good alignment also shows a good field enhancement behavior with a high value of the field enhancement factor.

关键词： Heterogeneous nucleation ZnO nanorods pattern selective growth Field enhancement

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Direct growth of single-walled carbon nanotubes on substrates

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Science Bulletin 2012年第Z1期 225-233页

作者： PENG Fei,LIU Yu,CUI RongLi,GAO DongLiang,YANG Feng & LI Yan* Beijing National Laboratory for Molecular Sciences,National Laboratory of Rare Earth Material Chemistry and Application,Key Laboratory for the Physics and Chemistry of Nanodevices,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871,China

As one of the most promising candidate material for next generation electronic devices,the reliable and controllable synthesis of high quality single-walled carbon nanotubes(SWNTs) has long been an essential and important issue in the *** growth of SWNTs on flat substrates by chemical vapor deposition(CVD) process is the best way to obtain SWNTs because it is immediately ready for building *** orientation of the SWNTs has been well controlled by gas flow or substrate lattice during the CVD growth *** chirality and structure control of SWNTs is still a big ***,the conductivity selective growth has already partially *** catalysts have been explored to obtain SWNTs of higher *** with the further progress in the study of the SWNT growth,the precise control over the orientation,position and conductivity of SWNTs is expected to meet the requirements of carbon-based nanoelectronics.

关键词： single-walled carbon nanotubes chemical vapor deposition selective growth

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