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Design and performance of a complex-coupled DFB laser with sampled grating

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Journal of Semiconductors 2009年第2期30卷 39-41页

作者：王桓朱洪亮贾凌慧陈向飞王圩 Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Sciences Microwave-Photonics Technology Laboratory Nanjing National Laboratory of MicrostructuresNanjing University

A complex-coupled DFB laser with sampled grating has been designed and fabricated. The method uses the ＋ 1 st order reflection of the sampled grating for laser single-mode operation. The typical threshold current of the sampled grating based DFB laser is 25 mA, and the optical output is about 10 mW at the injected current of 100 mA. The lasing wavelength of the device is 1.5385 μm, which is the ＋1 st order wavelength of the sampled grating.

关键词： sampled grating complex-coupled +1st order wavelength DFB

Application of sampled grating to control the lasing wavelength in complex-coupled DFB laser

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Chinese Physics B 2009年第7期18卷 2868-2872页

作者：王桓朱洪亮贾凌慧陈向飞孔端花王列松张伟赵玲娟王圩 Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Sciences Microwave-Photonics Technology Laboratory Nanjing National Laboratory of MicrostructuresNanjing University

This paper reports that the complex-coupled distributed feedback laser with the sampled grating has been designed and *** ＋1st order reflection of the sampled grating is utilized for laser single mode operation,which is 1.5387 μm in the *** typical threshold current of the device is 30 mA,and the optical output power is about 10 mW at the injection current of 100 mA.

关键词： sampled grating complex-coupled +1st order mode distributed feedback laser

Transient mode competition in directly modulated DFB semiconductor laser

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Science China(Physics,Mechanics & Astronomy) 2015年第12期58卷 187-192页

作者： XIAO RuLei SHI YueChun ZHENG JiLin ZHANG YunShan ZHENG JunShou CHEN XiangFei National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and College of Engineering and Applied Sciences Nanjing University Photonics Information Technology Laboratory Institute of Communication Engineering PLA University of Science and Technology

A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift （EPS） technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly de- signed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between -lst order （main mode） and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent n phase shift （n-EPS） is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the -1st order wavelength is around the gain peak, while the stable single longitudinal mode （SLM） operation of the -lst order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation （32 dB extinction ratio） are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation.

关键词： DFB semiconductor laser mode competition relaxation oscillation sampled grating