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Room-temperature vertical ferroelectricity in rhenium diselenide induced by interlayer sliding

Frontiers of physics 2023年第5期18卷 143-151页

作者： Fang Li Jun Fu Mingzhu Xue You Li Hualing Zeng Erjun Kan Ting Hu Yi Wan MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing and Department of Applied PhysicsNanjing University of Science and TechnologyNanjing 210094China International Center for Quantum Design of Functional Materials(ICQD) Hefei National Laboratory for Physical Sciences at the Microscaleand Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026China State Key Laboratory for Artificial Microstructure&Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China

One variety of ferroelectricity that results from lateral relative movements between the adjacent atomic layers is referred to as sliding ferroelectricity,which generates an interfacial charge transfer and hence a polarization *** mechanism of sliding ferroelectricity existent in van der Waals crystals is quite distinct from the conventional ferroelectric switching mechanisms mediated by ion *** creates new possibilities for the design of two-dimensional(2D)ferroelectrics since it can be achieved even in non-polar *** 2D ferroelectrics can be widely employed for practical implementations,however,there is still significant work to be done on several fronts,such as exploring ferroelectricity possibly in more potential 2D ***,we report the experimental observation of room-temperature robust vertical ferroelectricity in layered semiconducting rhenium diselenide(ReSe_(2)),a representative member of the transition metal dichalcogenides material family,based on a combined research of nanoscale piezoresponse and second harmonic generation *** no such ferroelectric behavior was seen in 1L ReSe_(2),2L ReSe_(2)exhibits vertical ferroelectricity at ambient *** on density-functional theory calculations,we deduce that the microscopic origin of ferroelectricity for ReSe_(2)is uncompensated vertical charge transfer that is dependent on in-plane translation and switchable upon interlayer *** findings have important ramifications for the ongoing development of sliding ferroelectricity since the semiconducting properties and low switching barrier of ReSe2 open up the fascinating potential for functional nanoelectronics applications.

关键词： rhenium diselenide transition metal dichalcogenides vertical ferroelectricity sliding ferroelectricity

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Thickness-dependent exciton relaxation dynamics of few-layer rhenium diselenide

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Chinese Physics B 2023年第6期32卷 522-528页

作者：霍唱福云田田鄢小卿刘泽文赵欣许文雄崔乾楠刘智波田建国 Key Laboratory of Weak-Light Nonlinear Photonics Ministry of EducationSchool of PhysicsNankai UniversityTianjin 300071China School of Physical Science and Technology Tiangong UniversityTianjin 300387China State Key Laboratory of Bioelectronics School of Biological Science and Medical EngineeringSoutheast UniversityNanjing 210096China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China

rhenium diselenide(ReSe_(2))has gathered much attention due to its low symmetry of lattice structure,which makes it possess in-plane anisotropic optical,electrical as well as excitonic properties and further enables ReSe_(2)have an important application in optoelectronic ***,we report the thickness-dependent exciton relaxation dynamics of mechanically exfoliated few-layer ReSe_(2)flakes by using time-resolved pump–probe transient transmission *** results reveal two thickness-dependent relaxation processes of the *** fast one correlates with the exciton formation(i.e.,the conversion of hot carriers to excitons),while the slow one is attributed to the exciton recombination dominated by defect-assisted exciton trapping besides photon emission *** decrease of scattering probability caused by defects leads to the increase of fast lifetime with thickness,and the increase of slow lifetime with thickness is related to the trap-mediated exciton depopulation induced by surface ***-dependent transient spectroscopy indicates the isotropic exciton dynamics in the two-dimensional(2D)*** results are insightful for better understanding of excitonic dynamics of ReSe_(2)materials and its application in future optoelectronic and electronic devices.

关键词： rhenium diselenide pump–probe spectroscopy carrier dynamics exciton

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Direct identification of monolayer rhenium diselenide by an individual diffraction pattern

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Nano Research 2017年第7期10卷 2535-2544页

作者： Zhen Fei Bo Wang Ching-Hwa Ho Fang Lin Jun Yuan Ze Zhang Chuanhong Jin State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China School of Physical Science and Technology Lanzhou University Lanzhou 730000 China Graduate Institute of Applied Science and Technology Taiwan University of Science and Technology Taipei 106 Taiwan China College of Electronic Engineering South China Agricultural University Guangzhou 510642 China Department of Physics University of York Heslington York YO 10 5DD UK

In the current extensive studies of layered two-dimensional （2D） materials, compared to hexagonal structures such as graphene, hBN, and MoS2, low- symmetry 2D materials have shown great potential for applications in anisotropic devices. rhenium diselenide （ReSe2） possesses the bulk space group P1 and belongs to the triclinic crystal system with a deformed cadmium-iodide-type structure. Here, we propose an electron diffraction-based method to distinguish the monolayer ReSe2 membrane from multilayer ReSe2 and its two different vertical orientations. Our method is also applicable to other low-symmetry crystal systems, including both triclinic and monoclinic lattices, as long as their third unit-cell basis vectors are not perpendicular to the basal plane. Our experimental results are well explained by kinematical electron diffraction theory and the corresponding simulations. Generalization of our method to other 2D materials, such as ~：raphene, is also discussed.

关键词： rhenium diselenide electron diffraction monolayer reciprocal rel-rod

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Application of chemical vapor-deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reaction

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Nano Research 2018年第4期11卷 1787-1797页

作者： Shaolong Jiang Zhepeng Zhang Na Zhang Yahuan Huan Yue Gong Mengxing Sun Jianping Shi Chunyu Xie Pengfei Yang Qiyi Fang He Li Lianming Tong Dan Xie Lin Gu Porun Liu Yanfeng Zhang Department of Materials Science and Engineering College of Engineering Peking University Beijing 100871 China Center for Nanochemistry (CNC) Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China School of Physical Sciences University of Chinese Academy of Sciences Beijing 100190 China Institute of Microelectronics Tsinghua National Laboratory for Information Science and Technology (TNList) Tsinghua University Beijing 100084 China Collaborative Innovation Center of Quantum Matter Beijing 100190 China Centre for Clean Environment and Energy Griffith University Gold Coast 4222 Australia

Controlled synthesis of structurally anisotropic rhenium diselenide （ReSe2） with macroscopically uniform and strictly monolayer thickness as well as tunable domain shape/size is of great interest for electronics-, optoelectronics-, and electrocatalysis-related applications. Herein, we describe the controlled synthesis of uniform monolayer ReSe2 flakes with variable morphology （sunflower- or truncated-triangle-shaped） on SiO2/Si substrates using different ambient-pressure chemical vapor deposition （CVD） setups. The prepared polycrystalline ReSe2 flakes were transferred intact onto Au foil electrodes and tested for activity in the hydrogen evolution reaction （HER）. Interestingly, compared to the compact truncated-triangle-shaped ReSe2 flakes, their edge-abundant sunflower-shaped counterparts exhibited superior electrocatalytic HER activity, featuring a relatively low Tafel slope of - 76 mV/dec and an exchange current density of 10.5 μA/cm2. Thus, our work demonstrates that CVD-grown ReSe2 is a promising two- dimensional anisotropic material for applications in the electrocatalytic HER.

关键词： rhenium diselenide chemical vapor deposition(CVD) monolayer morphology control hydrogen evolution reaction (HER)

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Highly crystalline ReSe2 atomic layers synthesized by chemical vapor transport

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InfoMat 2019年第4期1卷 552-558页

作者： Lei Xing Xingxu Yan Jingying Zheng Guanchen Xu Zhixing Lu Lina Liu Jinghui Wang Peng Wang Xiaoqing Pan Liying Jiao Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education Department of ChemistryTsinghua UniversityBeijingChina National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjingChina Department of Materials Science and Engineering University of CaliforniaIrvineCalifornia

Two-dimensional (2D) anisotropic rhenium diselenide (ReSe2) has attracted lots ofattention due to its promising applications in electronics and optoelectronics. However,controlled synthesis of high quality ultrathin ReSe2 remains as a *** we developed an approach for synthesizing high quality 2D ReSe2 flakes witha thickness down to monolayer by chemical vapor transport (CVT) through carefullytuning the growth kinetics. The atomic structures and anisotropy of theobtained ReSe2 flakes were intensively characterized with scanning transmissionelectron microscope and angle-resolved polarized Raman spectroscopy. Fieldeffecttransistors fabricated on the CVT-grown ReSe2 flakes showed n-typesemiconducting behavior with an on/off current ratio of 105 and a mobility up to5 cm2 V−1 s−1, which is comparable to mechanically exfoliated flakes and isobvious higher than the samples synthesized with other approaches. This study notonly make high quality 2D ReSe2 easily accessible for both fundamental and applicationexplorations but also sheds new lights on the chemical synthesis of otheranisotropic 2D materials.

关键词： anisotropy chemical vapor transport field-effect transistor rhenium diselenide two-dimensional

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