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reversible hydrogenation restores defected graphene to graphene

Science China Chemistry 2021年第6期64卷 1047-1056页

作者： Lin Jiang Pauline MGvan Deursen Hadi Arjmandi-Tash Liubov ABelyaeva Haoyuan Qi Jiao He Vincent Kofman Longfei Wu Valery Muravev Ute Kaiser Harold Linnartz Emiel JMHensen Jan PHofmann Grégory FSchneider Leiden Institute of Chemistry Leiden UniversityEinsteinweg 552333CC LeidenThe Netherlands Central Facility for Electron Microscopy Electron Microscopy Group of Materials ScienceUlm UniversityAlbert-Einstein-Allee 11Ulm 89081Germany Laboratory for Astrophysics Leiden ObservatoryLeiden UniversityNiels Bohrweg 22333 CA LeidenThe Netherlands Laboratory for Inorganic Materials and Catalysis Department of Chemical Engineering and ChemistryEindhoven University of TechnologyP.O.Box 5135600 MB EindhovenThe Netherlands Center for Advancing Electronics Dresden(cfaed)and Faculty of Chemistry and Food Chemistry Technical University of Dresden010069 DresdenGermany

Graphene as a two-dimensional material is prone to hydrocarbon contaminations,which can significantly alter its intrinsic electrical properties.Herein,we implement a facile hydrogenation-dehydrogenation strategy to remove hydrocarbon contaminations and preserve the excellent transport properties of monolayer graphene.Using electron microscopy we quantitatively characterized the improved cleanness of hydrogenated graphene compared to untreated samples.In situ spectroscopic investigations revealed that the hydrogenation treatment promoted the adsorption of water at the graphene surface,resulting in a protective layer against the re-deposition of hydrocarbon molecules.Additionally,the further dehydrogenation of hydrogenated graphene rendered a more pristine-like basal plane with improved carrier mobility compared to untreated pristine graphene.Our findings provide a practical post-growth cleaning protocol for graphene with maintained surface cleanness and lattice integrity to systematically carry a range of surface chemistry in the form of a well-performing and reproducible transistor.

关键词： graphene reversible hydrogenation surface cleanness in situ spectroscopy transistors

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reversible hydrogenation of AB2-type Zr–Mg–Ni–V based hydrogen storage alloys

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Progress in Natural Science:Materials International 2021年第2期31卷 319-323页

作者： Yong Wu Yuanting Peng Xiaojing Jiang Hui Zeng Zeyuan Wang Jie Zheng Xingguo Li Beijing National Laboratory for Molecular Sciences (BNLMS) College of Chemistry and Molecular Engineering Peking University Wuhan Institute of Marine Electric Propulsion

The development of hydrogen energy is hindered by the lack of high-efficiency hydrogen storage materials. To explore new high-capacity hydrogen storage alloys, reversible hydrogen storage in AB-type alloy is realized by using A or B-side elemental substitution. The substitution of small atomic-radius element Zr and Mg on A-side of YNiand partial substitution of large atomic-radius element V on B-side of YNialloy was investigated in this study. The obtained ZrMgNi, ZrMgNiV, and ZrMgNiValloys remained single Laves phase structure at asannealed, hydrogenated and dehydrogenated states, indicating that the hydrogen-induced amorphization and disproportionation was eliminated. From ZrMgNito ZrMgNiVwith the increase of the degree of vanadium substitution, the reversible hydrogen storage capacity increased from 0.6 wt%(0.35 H/M) to 1.8 wt%(1.0 H/M),meanwhile the lattice stability gradually increased. The ZrMgNiValloy could absorb 1.8 wt% hydrogen in about 2h at 300 K under 4 MPa Hpressure and reversibly desorb the absorbed hydrogen in approximately 30 min at 473K without complicated activation process. The prominent properties of ZrMgNiVelucidate its high potential for hydrogen storage application.

关键词： Laves phase Hydrogen storage Zr–Mg–Ni–V alloy reversible hydrogenation Vanadium substitution

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