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Effects of Oxygen Concentration in Monocrystalline Silicon on reverse leakage current of PIN Rectifier Diodes

Journal of Wuhan University of Technology(Materials Science) 2021年第4期36卷 472-477页

作者：孙新利 GUO Hui ZHANG Yuming GUO Bingjian LI Xingpeng CAO Zhen State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China Xi'an Zhongjing Semiconductor Materials Co. Ltd.Xi'an 710071China

The effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diodes were studied.We fabricated the PIN rectifier diodes with different initial oxygen concentrations,and analyzed the electrical properties,anisotropic preferred etching by means of optical microscopy,Fourier transform infrared spectroscopy and transmission electron microscopy.It is pointed out that the reverse leakage current increases exponentially with the increasing initial oxygen concentration.Furtherly,we researched and analyzed the mechanism of the effects of initial oxygen concentration on the reverse leakage current of PIN rectifier diode.It is shown that the oxygen precipitations present in an "S" curve with increasing initial oxygen concentration after high temperature diffusion.The main reason is that the nucleation and growth of oxygen precipitation at high temperature induce bulk oxidation-induced defects (B-OSF),which are mainly dislocations,and a small amount of rod stacking faults.The density of B-OSF increases with the increasing initial oxygen concentration.The existence of B-OSF has great effects on the reverse leakage current of PIN rectifier diode.

关键词： oxygen concentration PIN rectifier diode induced defect reverse leakage current

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NiO/β-Ga_(2)O_(3)heterojunction diodes with ultra-low leakage current below 10^(-10)A and high thermostability

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中国物理B:英文版 2023年第9期32卷 530-534页

作者：黄义杨稳王琦高升陈伟中唐孝生张红升刘斌 School of Optoelectronic Engineering Chongqing University of Posts and TelecommunicationsChongqing 400065China School of Electronic Science and Engineering Nanjing UniversityNanjing 210093China

The 10 nm p-NiO thin film is prepared by thermal oxidation of Ni onβ-Ga_(2)O_(3)to form NiO/β-Ga_(2)O_(3)p-n heterojunction diodes(HJDs).The NiO/β-Ga_(2)O_(3)HJDs exhibit excellent electrostatic properties,with a high breakdown voltage of 465 V,a specific on-resistance(Ron,sp)of 3.39 mΩ·cm^(2),and a turn-on voltage(V on)of 1.85 V,yielding a static Baliga's figure of merit(FOM)of 256 MW/cm^(2).Also,the HJDs have a low turn-on voltage,which reduces conduction loss dramatically,and a rectification ratio of up to 108.Meanwhile,the HJDs'reverse leakage current is essentially unaffected at temperatures below 170?C,and their leakage level may be controlled below 10^(-10)A.This indicates that p-NiO/β-Ga_(2)O_(3)HJDs with good thermal stability and high-temperature operating ability can be a good option for high-performanceβ-Ga_(2)O_(3)power devices.

关键词： NiO/β-Ga_(2)O_(3)p-n heterojunction diodes Baliga's figure of merit reverse leakage current β-Ga_(2)O_(3)power devices

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Resistive switching characteristic of electrolyte-oxide-semiconductor structures

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Journal of Semiconductors 2017年第8期38卷 32-37页

作者： Xiaoyu Chen Hao Wang Gongchen Sun Xiaoyu Ma Jianguang Gao Wengang Wu National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking University

The resistive switching characteristic of SiO2 thin film in electrolyte-oxide-semiconductor （EOS） struc- tures under certain bias voltage is reported. To analyze the mechanism of the resistive switching characteristic, a batch olEOS structures were fabricated under various conditions and their electrical properties were measured with a set of three-electrode systems. A theoretical model based on the formation and rupture of conductive filaments in the oxide layer is proposed to reveal the mechanism of the resistive switching characteristic, followed by an experimental investigation of Auger electron spectroscopy （AES） and secondary ion mass spectroscopy （SIMS） to verify the proposed theoretical model. It is found that different threshold voltage, reverse leakage current and slope value features of the switching I-V characteristic can be observed in different EOS structures with different elec- trolyte solutions as well as different SiO2 layers made by different fabrication processes or in different thicknesses. With a simple fabrication process and significant resistive switching characteristic, the EOS structures show great potential for chemical/biochemical applications.

关键词： electrolyte-oxide-semiconductor structure resistive switching characteristic conductive filament threshold voltage reverse leakage current

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