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Sparkling hot spots in perovskite solar cells under reverse bias

ChemPhysMater 2022年第1期1卷 71-76页

作者： Weiqi Li Keqing Huang Jianhui Chang Caiqi Hu Caoyu Long Hai Zhang Xavier Maldague Biao Liu Jianqiao Meng Yuxia Duan Junliang Yang School of Physics and Electronics Central South UniversityChangsha 410083China Computer Vision and Systems Laboratory Department of Electrical and Computer EngineeringUniversitéLaval1065av.de la MédecineQuébec(QC)Canada G1V 0A6

Perovskite solar cells(PSCs)are attracting much attention and are on the way to ***,some modules are subject to reverse bias in actual fields,so it is meaningful to investigate the reverse-bias behav-ior of ***,an in-situ temperature and current measurement technique was ***,some hot spots were observed and then quickly disappeared in the reverse biased PSCs,along with the simultaneous increase in the current and local ***,the potential mechanism has been revealed and *** abnormal bulge in the perovskite film was found at the hot ***,the appearance and disappearance of hot spots were perfectly explained by band bending and tunneling current caused by ion ***-tionally,statistical analysis suggested that sparkling hot spots were related to reverse voltage and efficiencies of *** research provides a great significance for the study of PSCs under reverse bias.

关键词： Perovskite solar cells reverse bias Hot spots Stability

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Double Layer Composite Electrode Strategy for Efficient Perovskite Solar Cells with Excellent reverse-bias Stability

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Nano-Micro Letters 2023年第1期15卷 225-235页

作者： Chaofan Jiang Junjie Zhou Hang Li Liguo Tan Minghao Li Wolfgang Tress Liming Ding Michael Grätzel Chenyi Yi State Key Laboratory of Power System Department of Electrical EngineeringTsinghua UniversityBeijing 100084People’s Republic of China Institute of Computational Physics(ICP) ZHAW School of EngineeringWildbachstr.218400 WinterthurSwitzerland Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190People’s Republic of China Laboratory of Photonics and Interfaces Department of Chemistry and Chemical EngineeringSwiss Federal Institute of Technology Lausanne1015 LausanneSwitzerland

Perovskite solar cells(PSCs)have become the represent-atives of next generation of photovoltaics;nevertheless,their stability is insufficient for large scale deployment,particularly the reverse bias ***,we propose a transparent conducting oxide(TCO)and low-cost metal composite electrode to improve the stability of PSCs without sacrificing the *** TCO can block ion migrations and chemical reactions between the metal and perovskite,while the metal greatly enhances the conductivity of the composite *** a result,composite electrode-PSCs achieved a power conversion efficiency(PCE)of 23.7%(certified 23.2%)and exhibited excellent stability,maintaining 95%of the initial PCE when applying a reverse bias of 4.0 V for 60 s and over 92%of the initial PCE after 1000 h continuous light *** composite electrode strategy can be extended to different combinations of TCOs and *** opens a new avenue for improving the stability of PSCs.

关键词： Composite electrode Perovskite solar cells Stability reverse bias Characterization

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A generalized Norde plot for reverse biased Schottky contacts

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International Journal of Minerals,Metallurgy and Materials 2012年第1期19卷 54-58页

作者： Chin-Min Hsiung Chuen-Shii Chou Ting-Lung Chiang Department of Mechanical Engineering Pingtung University of Science and Technology

When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the integrated circuit (IC) electronics field. The parameters of such contacts can be determined from their current-voltage (I-V) characteristics. The literature contains many proposals for extracting the contact parameters using graphical methods. However, such methods are generally applicable only to contacts with a forward bias, whereas many Schottky contacts actually operate under a reverse bias. Accordingly, the present study proposed a generalized reverse current-voltage (I-V) plot which enables the series resis-tance, barrier height, and ideality factor of a reverse biased Schottky contact to be extracted from a single set of I-V measurements. A theo-retical derivation of the proposed approach was presented and a series of validation tests were then performed. The results show that the proposed method is capable of extracting reliable estimates of the contact parameters even in the presence of experimental noise.

关键词： semiconductor materials integrated circuits electric contacts reverse bias Schottky barriers

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Spin-dependent tunneling of light and heavy holes with electric and magnetic fields

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Journal of Semiconductors 2018年第11期39卷 8-12页

作者： L.Bruno Chandrasekar M.Karunakaran K.Gnanasekar Department of Physics The American College Department of Physics Alagappa Govt. Arts College

The spin-dependent tunneling of light holes and heavy holes was analysed in a symmetrical heterostructure with externally applied electric and magnetic fields. The effects of the applied bias voltage, magnetic field and reverse bias were discussed for the polarization efficiency of light holes and heavy holes. The current density of spin-up and spin-down light holes increases as the bias voltage increases and reaches the saturation, whereas the current density of spin-up heavy holes is almost negligible. The applied bias voltage and the magnetic field highly influence the energy of resonance polarization, polarization efficiency, and the current density of heavy holes more than for the light holes.

关键词： heterostructure reverse bias current density

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