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Fabrication and investigation of ferroelectric memristors with various synaptic plasticities

Chinese Physics B 2022年第7期31卷 637-642页

作者： Qi Qin Miaocheng Zhang Suhao Yao Xingyu Chen Aoze Han Ziyang Chen Chenxi Ma Min Wang Xintong Chen Yu Wang Qiangqiang Zhang Xiaoyan Liu Ertao Hu Lei Wang Yi Tong College of Electronic and Optical Engineering and College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210023China Key Laboratory for Organic Electronics and Information Displays and Jiangsu Key Laboratory for Biosensors Nanjing University of Posts and TelecommunicationsNanjing 210023China

In the post-Moore era,neuromorphic computing has been mainly focused on breaking the von Neumann *** have been proposed as a key part of neuromorphic computing architectures,and can be used to emulate the synaptic plasticities of the human *** memristors represent a breakthrough for memristive devices on account of their reliable nonvolatile storage,low write/read latency and tunable conductive ***,among the reported ferroelectric memristors,the mechanisms of resistive switching are still under *** addition,there needs to be more research on emulation of the brain synapses using ferroelectric ***,Cu/PbZr_(0.52)Ti_(0.48)O_(3)(PZT)/Pt ferroelectric memristors have been *** devices are able to realize the transformation from threshold switching behavior to resistive switching *** synaptic plasticities,including excitatory post-synaptic current,paired-pulse facilitation,paired-pulse depression and spike time-dependent plasticity,have been mimicked by the PZT ***,the mechanisms of PZT devices have been investigated by first-principles calculations based on the interface barrier and conductive filament *** work may contribute to the application of ferroelectric memristors in neuromorphic computing systems.

关键词： brain-inspired computing ferroelectric memristors mechanisms resistive-switching

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