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Effect of residual-stress on microyield behavior of Al alloy reinforced by SiC_p

中国有色金属学会会刊：英文版 2005年第S3期15卷 7-11页

作者：李多生左敦稳周贤良华小珍陈同彩张建云 College of Mechanical and Electrical Engineering Nanjing University of Aeronautics and Astronautics Nanjing 210016ChinaCollege of Material Science and Engineering Nanchang Institute of Aeronautical Technology Nanchang 330034 China College of Mechanical and Electrical Engineering Nanjing University of Aeronautics and Astronautics Nanjing 210016China College of Material Science and Engineering Nanchang Institute of Aeronautical Technology Nanchang 330034 China

Because of the difference in the coefficient of thermal expansion of Al alloy and SiC_p, the residual-stress generates during the process of fabricating Al alloy reinforced by SiC_p. The analyzing residual-stress quantitatively by XRD shows that residual-stress is essential character of Al alloy reinforced by SiC_p, and the residual-stress in Al alloy matrix is tensile stress. The residual-stress decreases along with lessening of SiC_p size, which shows better microyield behavior. In annealing, the residual-stress of LY12+150#SiC_p is lower than that of ZL101+150#SiC, thus it has better microyield behavior. The residual-stress of solution-aging is bigger than that of annealing. The microyield behavior is also explained from the parameter change of microstructure to microyield behavior. Space-group relative microdistortion of Al alloy reinforced decreases along with lessening of SiC_p size, which has good microyield behavior.

关键词： microyield SiC_p space-group relative microdistortion XRD residual-stress

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Variability on Raman Shift to stress Coefficient of Porous Silicon

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Chinese Physics Letters 2006年第6期23卷 1623-1626页

作者：雷振坤亢一澜岑皓胡明 Department of Engineering Mechanics Dalian University of Technology Dalian 116024 Department of Mechanics School of Mechanical Engineering Tianjin University Tianjin 300072 Department of Electronic Science and Technology School of Electronic Information Engineering Tianjin University Tianjin 300072

Porous silicon film is a capillary-like medium, which is able to reveal different meso-elastic modulus with porosity. During the preparation of porous silicon samples, the capillary force is a non-classic force related to the liquid evaporation which directly influences the evolution of residual stress. In this study, a non-linear relation of Raman shift to stress coefficient and the porosity is obtained from the elastic modulus measured with nano-indentation by Bellet et al. [J. Appl. Phys. 60 （1996） 3772] Dynamic capillarity during the drying process of porous silicon is investigated using micro-Raman spectroscopy, and the results reveal that the residual stress resulted from the capillarity increased rapidly. Indeed, the dynamic capillarity has a close relationship with a great deal of micro-pore structures of the porous silicon.

关键词： SPECKLE PATTERN INTERFEROMETRY X-RAY-DIFFRACTION residual-stress DEFORMATION MEASUREMENT SPECTROSCOPY MODULUS

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Low Temperature Deposition of Titanium Nitride

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Journal of Materials Science & Technology 1998年第4期14卷 289-293页

作者： Wen, LS Huang, RF Chinese Acad Sci Inst Met Res Shenyang 110015 Peoples R China

Low temperature deposition (LTD) is an actual frontier in materials sicence and engineering, especially for thin film technology. In this paper the fundamentals and processing of low temperature deposition of TiN coating are reviewed. The prerequisites of a low temperature deposition process are enough good densification, hardness and adhesion of the deposited coating. The fundamentals of low temperature deposition are structure zone model and nonequilibrium plasma vapor growth in a combined DC and pulsed electromagnetic fields, namely a combination of a DC bias voltage superimposed by a DC pulsed bias voltage with variable frequency and peak voltage height. Low temperature deposition processing can be realized simply with only stationary electric fields. However, sensitivity of the product quality to the process parameters is the main barrier of this processing in the way to mass production. Low temperature deposition processing using the effects of a combined DC and pulsed electromagnetic fields has attained some promising results for the future commercialization. But they need still further systematic and deep study. The application of low temperature deposition processing is not limited in range of low melting substrate materials. It is also important for internal stress control, defect minimization, microstructure densification and performance improvement for coatings on broad spectrum of substrate materials as well as for different types of applications.

关键词： PULSE BIAS VOLTAGE residual-stress ION-BOMBARDMENT HARD COATINGS PVD COATINGS FILM GROWTH TIN ARC RESISTANCE SUBSTRATE

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