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remote heteroepitaxy of transition metal dichalcogenides through monolayer hexagonal boron nitride

Nano Research 2024年第4期17卷 3224-3231页

作者： Jidong Huang Jingren Chen Junhua Meng Siyu Zhang Ji Jiang Jingzhen Li Libin Zeng Zhigang Yin Jinliang Wu Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Faculty of Science Beijing University of TechnologyBeijing 100124China

As a very promising epitaxy technology,the remote epitaxy has attracted extensive attention in recent years,in which graphene is the most used interlayer material.As an isomorphic of graphene,two-dimensional(2D)hexagonal boron nitride(h-BN),is another promising interlayer for the remote epitaxy.However,there is a current debate on the feasibility of using h-BN as interlayer in the remote epitaxy.Herein,we demonstrate that the potential field of sapphire can completely penetrate monolayer h-BN,and hence the remote epitaxy of ZrS_(2) layers can be realized on sapphire substrates through monolayer h-BN.The field of sapphire can only partially penetrate the bilayer h-BN and result in the mixing of remote epitaxy and van der Waals(vdWs)epitaxy.Due to the weak interfacial scattering and high crystalline quality of ZrS_(2) epilayer,the ZrS_(2) photodetector with monolayer h-BN shows the best performance,with an on/off ratio of more than 2×10^(5) and a responsivity up to 379 mA·W^(-1).This work provides an efficient approach to prepare single-crystal transition metal dichalcogenides and their heterojunctions with h-BN,which have great potential in developing large-area 2D electronic devices.

关键词： remote epitaxy hexagonal boron nitride transition metal dichalcogenides chemical vapor deposition photodetectors

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Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

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National Science Open 2023年第4期2卷 86-102页

作者： Zhetong Liu Bingyao Liu Zhaolong Chen Shenyuan Yang Zhiqiang Liu Tongbo Wei Peng Gao Zhongfan Liu Electron Microscopy Laboratory and International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing 100871China Beijing Graphene Institute(BGI) Beijing 100095China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijing 100871China Center for Nanochemistry(CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Institute for Functional Intelligent Materials National University of SingaporeSingapore 117575Singapore State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Research and Development Center for Semiconductor Lighting Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Collaborative Innovation Center of Quantum Matter Beijing 100871China

Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication.However,the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal quality and device performance.Two-dimensional(2D)material-assisted heteroepitaxy offers an effective solution to these challenges.The weak interaction at the interface between films and substrates facilitates the subsequent exfoliation and transfer of epilayer for the fabrication of flexible or high-power electronics.Herein,we summarize the modes of 2D material-assisted epitaxy,which can be classified into remote epitaxy,pinhole epitaxy and van der Waals epitaxy based on the interfacial interaction between the epilayers and substrates.Furthermore,we discuss in detail the improved crystal quality and functional applications,such as flexible devices,wavelength-modulated optoelectronic devices,and thermal management in high-power devices.Moreover,we highlight the challenges and prospects of 2D material-assisted epitaxy,providing roadmaps for lateral research and semiconductor production.

关键词： graphene 2D materials heteroepitaxy remote epitaxy pinhole epitaxy van der Waals epitaxy

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A first-principles study on remote van der Waals epitaxy through a graphene monolayer on semiconductor substrates

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Chinese Physics B 2023年第6期32卷 466-475页

作者：侯锐杨身园 State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-electronic Technology University of Chinese Academy of SciencesBeijing 100049China

To investigate the mechanism of remote epitaxy, where the overlayer can follow the same crystalline structure as the underlying semiconductor substrate through a thin two-dimensional interlayer, we systematically study the potential fluctuations of graphene covered Si, Ga As, and Ga N substrates from first-principles. We find that the uneven semiconductor surface, the distorted graphene, and the non-uniform interface charge transfer make significant contributions to the potential fluctuation. The semiconductor substrate with different surface reconstructions and orientations will generate different potential fluctuations through the graphene interlayer. We also calculate and compare the adsorption of adatoms on graphene covered substrates. The adsorption energies of adatoms not only depend on their distances to the underlying semiconductor surface, but are also sensitive to the direction of the charge transfer at the graphene/substrate interface. Changing the semiconductor reconstruction or orientation could even reverse the order of the adsorption energies of cation and anion adatoms by reversing the interface charge transfer direction, leading to a change in the growth orientation of the overlayer.Our study improves the understanding of the mechanism of remote epitaxy, and reveals that it is possible to control the initial nucleation and orientation of overlayers by changing the semiconductor reconstructions and/or orientations in remote epitaxy.

关键词： interface adsorption remote epitaxy first-principles

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