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Characteristics of an Indium-Rich InGaN p-n Junction Grown on a Strain-relaxed InGaN Buffer Layer

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Chinese Physics Letters 2013年第4期30卷 174-176页

作者： YANG Lian-Hong ZHANG Bao-Hua GUO Fu-Qiang Xinjiang Laboratory of Phase Transitions and Microstructures of Condensed Matter Yili Normal UniversityYining 835000 Department of Physics Changji CollegeChangji 831100

An indium-rich InGaN p-n junction is grown on a strain-relaxed InGaN buffer *** results show that the n-InGaN is grown coherently on the buffer layer but the p-InGaN layer exhibits a partial strain *** fabricated InGaN p-n junction has a low reverse leakage current density on the order of 10^(-8)A/cm^(2)within the measured voltage range,and exhibits a wide spectral response due to the presence of band tail states or deep level states which origin from indium composition fluctuation or various *** measured peak responsivity at 438 nm is 31 mA/W at zero bias and reaches 118 mA/W at 3 V reverse *** addition,the Raman spectra of the p-and n-type InGaN alloys are also analyzed.

关键词： InGaN relaxed indium

Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with relaxed Ge Buffer

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Chinese Physics Letters 2013年第11期30卷 195-198页

作者： SU Shao-Jian HAN Gen-Quan ZHANG Dong-Liang ZHANG Guang-Ze XUE Chun-Lai WANG Qi-Ming CHENG Bu-Wen College of Information Science and Engineering Huaqiao UniversityXiamen 361021 Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China College of Optoelectronic EngineeringChongqing UniversityChongqing 400044 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesP.O.Box 912Beijing 100083

Germanium-tin(Ge_(1-x)Sn_(x))p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)were fabricated using a strained Ge_(0.985)Sn_(0.015) thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer *** Ge buffer was deposited using a two-step chemical vapor deposition growth *** high quality Ge_(0.985)Sn_(0.015) layer was grown by solid source molecular beam ***_(0.985)Sn_(0.015) pMOSFETs with Si surface passivation,TaN/HfO_(2) gate stack,and nickel stanogermanide[Ni(Ge_(1-x)Sn_(x))]source/drain were fabricated on the grown *** device achieves an effective hole mobility of 182 cm^(2)/V·s at an inversion carrier density of 1×10^(13) cm^(-2).

关键词： technique drain relaxed

Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

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Light(Science & Applications) 2021年第7期10卷 1267-1274页

作者： Ye Yu Tao Wang Xiufang Chen Lidong Zhang Yang Wang Yunfei Niu Jiaqi Yu Haotian Ma Xiaomeng Li Fang Liu Gaoqiang Deng Zhifeng Shi Baolin Zhang Xinqiang Wang Yuantao Zhang State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityQianjin Street 2699Changchun 130012China Electron Microscopy Laboratory School of PhysicsPeking UniversityBeijing 100871China State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Key Laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China

Strain modulation is crucial for heteroepitaxy such as GaN on foreign ***,the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is *** was directly prepared on SiC substrates by thermal *** pre-treatment with nitrogen-plasma can introduce C–N dangling bonds,which provides nucleation sites for subsequent epitaxial *** scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by *** study the growth behavior on different areas of graphene surface after pre-treatment,and propose a growth model to explain the epitaxial growth mechanism of GaN films on ***,graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells(MQWs)active region,which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN *** work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.

关键词： diodes relaxed strain

The Analysis of Impact Factors of Foreign Investment Based on relaxed Lasso

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Journal of Applied Mathematics and Physics 2017年第3期5卷 693-699页

作者： Yanqi He College of Mathematics and Information China West Normal University Nanchong China

relaxed Lasso method is used for variable selection to 15 main economic factors affecting foreign investment. While relaxed Lasso method, method of least squares and regression are compared, the result further reveals... 详细信息

关键词： relaxed Lasso Variable Selection Foreign Investment

ALGEBRAIC MULTILEVEL relaxed PRECONDITIONING METHODS

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Numerical Mathematics A Journal of Chinese Universities(English Series) 1999年第2期8卷 221-230页

作者：林鹭

Some ways of multilevel relaxed preconditioning matrices for the stiffness matrix in the discretization of selfad joint second order elliptic boundary value problems are proposed. For reason-able assumptions of the re... 详细信息

关键词： relaxed preconditioning multilevel method relative conditioning number.

Liu Yang:China's First Female Astronaut

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China News Release 2024年第8期 59-61页

作者： Hu Mengfei 不详

On June 18,2012,during the Shenzhou IX mission,Liu Yang,responsible for documenting the scenes inside the orbiting capsule,unexpectedly turned the camera to herself and took some"selfies."Her sweet and calm smile instantly lightened the mood,bringing laughter to the ground monitoring *** relaxed state not only eased the minds of monitoring experts,but also reassured those concerned about *** the first Chinese female astronaut,Liu captured significant attention with her every move in outer space.

关键词： bringing outer relaxed

Tea for Harmony Yaji Cultural Salon Inviting the Nigerians to Enjoy the Tea Culture

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China & The World Cultural Exchange 2024年第7期 10-10页

作者： Qin Fangfang 不详

On June 20,Tea for Harmony Yaji Cultural Salon heldby China Cultural Centerattracted dozens of students of the Chinese class of the cultural center and their relatives and *** of them sat together,sharing tea fragrance and tea *** event was held in the form of salon,using the way of sitting on the floor to create a relaxed and warm atmosphere,allowing guests to immerse themselves in the Chinese tea culture.

关键词： Harmony floor relaxed

Improving maize seed protein content and nitrogen-use efficiency by a teosinte asparagine synthetase

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Molecular Plant 2023年第3期16卷 497-499页

作者： Yongqiang Liu Chengcai Chu State Key Laboratory of Plant Genomics Institute of Genetics and Developmental BiologyChinese Academy of SciencesBeijingChina Guangdong Laboratory for Lingnan Modern Agriculture College of AgricultureSouth China Agricultural UniversityGuangzhouChina Key Laboratory for Enhancing Resource Use Efficiency of Crops in South China Ministry of Agriculture and Rural AffairsSouth China Agricultural University.GuangzhouChina

From the earliest farming civilization,artificial selection continuously improves the critical agronomic traits for easier cultivation,higher yield,and better nutrient quality during crop *** this process,genetic diversity of modern crops might be largely lost due to bottleneck effect with relative relaxed selection pressure(Doebley et al.,2006).To this end,the wild ancestors of modern crops,with their abundant genetic diversity,act as valuable pools for modern crop improvement.

关键词： crops content relaxed

Addressing Environmental Health Challenges for Sustainable Development in China

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China CDC weekly 2023年第32期5卷 715-719页

作者： Shilu Tong Yuebin Lyu Jiao Wang Xiaoming Shi National Institute of Environmental Health Chinese Center for Disease Control and PreventionBeijingChina Queensland University of Technology BrisbaneAustralia.

On May 5,2023,the World Health Organization(WHO)declared that the coronavirus disease 2019(COVID-19)no longer posed a public health emergency of international concern(1).As restrictions associated with the epidemic are relaxed and a fresh policy cycle commences,China’s economy is expected to serve as a key driver of global economic postpandemic recovery.

关键词： Health policy relaxed