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Crystalline Structure and Surface Morphology of Tin Oxide Films Grown by DC reactive sputtering

Photonic Sensors 2014年第4期4卷 349-353页

作者： Mohammad K. KHALAF Natheera A. AL-TEMEMEEt Fuad T. IBRAHIM Mohammed A. HAMEED Department of Physics College of Science University of Baghdad Baghdad lraq

Tin oxide thin films were deposited by direct current （DC） reactive sputtering at gas pressures of 0.015 mbar - 0.15 mbar. The crystalline structure and surface morphology of the prepared SnO2 films were introduced by X-ray diffraction （XRD） and atomic force microscopy （AFM）. These films showed preferred orientation in the （110） plane. Due to AFM micrographs, the grain size increased non-uniformly as the working gas pressure increased.

关键词： sputtering reactive sputtering thin films tin oxide

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Active feedback control of reactive sputtering AIN thin film fro FBAR

Active feedback control of reactive sputtering AIN thin film...

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2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Dong Shu-rong Depart.of Info.Sci.＆ Elec.Eng.Zhejiang University

＜正＞A1N thin films with high c-axis orientation are deposited by DC reactive magnetron sputtering and active feedback control *** on the analysis of the Berg hysteresis model,We analyze the technology parameter influence on the hysteresis effect,inclusing pumping speed,temperature of substrate and target,input power,target to substrate distance and area of target.A new active feedback control method and some improvement to eliminate hysteresis effect are presented to quickly depositing A1N thin film with high c-axis oriented.

关键词： AIN thin film reactive sputtering deposition rate hysteresis effect FBAR

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Preparation of CeO_2 Buffer Layer on Cube Textured Nickel Substrate by reactive sputtering

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Journal of Rare Earths 2006年第2期24卷 205-205页

作者： Zhang Hua Yang Jian Gu Hongwei Liu Huizhou Qu Fei Superconducting Materials Research Center General Research Institute for Non-Ferrous Metals Beijing 100088 China

The buffer layer CeO2 films were grown on cube textured metallic Ni substrates by using reactive magnetrun sputtering. Ar/H2 mixed atmosphere, which effectively inhibited the formation of NiO, was used as pre-depositing gas before CeO2 films were grown in Ar and 02. At 700 ℃ under the total pressure of 26 Pa,the pure c-axis orientation tilm was obtained. X-ray θ-2θscan, pole figure and φ-scan were used to observe the microstructure of the buffer layer. The resuits show that CeO2 film has strong cube texture and the FWHM is 9°. In addition, the CeO2 film is dense and crack-free.

关键词： CeO2 buffer layer reactive sputtering cube texture Ni substrate rare earths

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The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films

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Plasma Science and Technology 2022年第6期24卷 157-163页

作者： Yan YANG Peiyu JI Maoyang LI Yaowei YU Jianjun HUANG Bin YU Xuemei WU Tianyuan HUANG College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060People's Republic of China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060People's Republic of China Advanced Energy Research Center Shenzhen UniversityShenzhen 518060People's Republic of China School of Optoelectronic Science and Engineering Soochow UniversitySuzhou 215123People's Republic of China School of Physical Science and Technology Soochow UniversitySuzhou 215123People's Republic of China Institute of Plasma Physics Chinese Academy of SciencesHefei 230031People's Republic of China

A reactive helicon wave plasma(HWP)sputtering method is used for the deposition of tungsten nitride(WNx)thin films.N_(2)is introduced downstream in the diffusion *** impacts of N_(2)on the Ar-HWP parameters,such as ion energy distribution functions(IEDFs),electron energy probability functions(EEPFs),electron temperature(Te)and density(ne),are *** the addition of N_(2),a decrease in electron density is observed due to the dissociative recombination of electrons with N_(2)^(+).The similar IEDF curves of Ar+and N_(2)^(+) indicate that the majority ofN_(2)^(+) stems from the charge transfer in the collision between Ar+and N_(2).Moreover,due to the collisions between electrons and N_(2)ions,EEPFs show a relatively lower Tewith a depletion in the high-energy *** increasing negative bias from 50 to 200 V,a phase transition from hexagonal WN to fcc-WN0.5is observed,together with an increase in the deposition rate and roughness.

关键词： helicon wave plasma reactive sputtering tungsten nitride plasma diagnosis

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Characterization of Polycrystalline Nickel Cobaltite Nanostructures Prepared by DC Plasma Magnetron Co-sputtering for Gas Sensing Applications

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Photonic Sensors 2018年第1期8卷 43-47页

作者： Oday A. HAMMADI Noor E. NAJI Department of Physics College of Education Al-Iraqia University Baghdad 12001 Iraq School of Applied Sciences University of Technology Baghdad 35010 Iraq

In this work, a gas sensor is fabricated from polycrystalline nickel cobaltite nano films deposited on transparent substrates by closed-field unbalanced dual-magnetrons （CFUBDM） co-sputtering technique. Two targets of nickel and cobalt are mounted on the cathode of discharge system and co-sputtered by direct current （DC） argon discharge plasma in presence of oxygen as a reactive gas. The total gas pressure is 0.5 mbar and the mixing ratio of Ar：O2 gases is 5：1. The characterization measurements performed on the prepared films show that their transmittance increases with the incident wavelength, the polycrystalline structure includes 5 crystallographic planes, the average particle size is about 35nm, the electrical conductivity is linearly increasing with increasing temperature, and the activation energy is about 0.41 eV. These films show high sensitivity to ethanol vapor.

关键词： Nickel cobaltite magnetron sputtering reactive sputtering gas sensing

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Deposition of Thick Coatings by Modulated Pulse Power sputtering

Deposition of Thick Coatings by Modulated Pulse Power Sputte...

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第18届国际真空大会

作者： William D. Sproul John J. Moore Colorado School of Mines Department of Metallurgical ＆ Materials EngineeringGoldenColorado 80401USA

High power pulse magnetron sputtering （HPPMS） is a very important advancement in sputtering technology because it produces a high degree of ionization of the sputtered material by applying a very high power pulse of electrical energy to the sputtering target for a short period of time. A variation of the HPPMS process is modulated pulse power （MPP） sputtering, and it applies a multi-step high power pulse to the sputtering target for times longer than the single step HPPMS process. MPP also produces a high degree of ionization of the sputtered material, but it can do so without a reduction in the sputtering rate that is observed with the conventional HPPMS process. MPP can also lead to deposition rates higher than the DC sputtering rate for an equivalent amount of applied power.

关键词： Modulated Pulse Power MPP HPPMS reactive sputtering

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Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor

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Journal of Rare Earths 2006年第5期24卷 I0001-I0001页

作者： Zhang Hua Yang Jian Gu Hongwei Liu Huizhou Qu Fei Superconducting Materials Research Center General Research Institute for Non-Ferrous Metals Beijing 100088 China

The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films.

关键词： CeO2 Y2O3 buffer layer reactive sputtering cube texture Ni substrate rare earths

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大面积反应磁控溅射的均匀性控制(英文)

大面积反应磁控溅射的均匀性控制(英文)

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薄膜技术高峰论坛暨广东省真空学会学术年会

作者： V.Bellido-Gonzalez B.Daniel D.Monaghan J.Counsell GuangZhou HongChuang Machinery Equipment Technology Co. Ltd.Rm3508-09East TowerYang Cheng International Commercial CenterNo.122 TiYu Dong Rd.GuangZhou Gencoa Ltd Physics RoadLiverpoolL24 9HPUK J.Counsell Ltd. Lynwood(54)Grange Cross LaneWest KirbyCH48 8BQUK

Magnetron sputtering is an industrial coating deposition technique which is commonly used in glass coating industry in order to add functionality and properties to the base glass,properties such as antireflection,electrical conductivity, low emissivity are currently achieved thanks to magnetron *** magnetron sputtering occurs when the deposited chemical composition of the coating substantially differs from the composition of the magnetron sputtering targets, (*** coatings deposited from Ti targets) or coating physicochemical properties differ much of the sputtered or cosputtered target(*** power ZnS).Up to a certain point magnetron sputtering has been a tolerated *** Coating Industry has‘opted-out’on certain reactive sputtering processes in order to gain process stability and reproducibility. The use of compound targets has already been adopted,***,ZnO:Al;and more recently TiO which has the potential of replacing Ti reactive *** of these compound targets still would require a certain degree of reactive sputtering, especially for large area deposition requiring high coating ***,the general idea in those instances has been to limit the required control level to a minimum,almost entirely based on control of inputs rather than the monitoring of *** of the key elements in maintaining a uniform reactive sputtering process over a large area under control,is the sensor or sensors which are used as reference in the closed loop *** lack of stable sensors,and/or misuse or misplacement of sensors,has led the industry in many instances to take safer *** present paper would try to highlight the current sensor availability with its pros and cons in large area uniform reactive magnetron sputtering deposition.

关键词： magnetron sputtering uniformity reactive sputtering control

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