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Proton radiation effect on GaAs/AlGaAs core–shell ensemble nanowires photo-detector

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Chinese Physics B 2017年第8期26卷 333-336页

作者：谭丽英黎发军谢小龙周彦平马晶 National Key Laboratory of Tunable Laser Technology Harbin Institute of TechnologyHarbin 150001China

We demonstrate that the GaAs/AlGaAs nanowires（NWs） ensemble is fabricated into photo-detectors. Current–voltage（I–V） characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10^（13） cm^（-2） to 5.0 × 10^（14） cm^（-2）. The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.

关键词： radiation effect lifetime damage coefficient mobility damage coefficient radiation damage

AGGLOMERATION AND radiation effect OF THE PULL OF URBANIZATION

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Chinese Geographical Science 2003年第3期13卷 224-227页

作者： QI Jin-li (School of Economics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China) School of Economics Huazhong University of Science and Technology Wuhan 430074 P. R. China

In order to explore the train of thought for China’s urbanizing development and coordinated rural economic development, and to find good ways of solving rural problems through urbanization, this paper absorbs the push-and-pull forces theory and the systematic dynamic theory in the traditional population migration theories, views urbanization as a dynamic system, makes research on the push-and-pull mechanism of urbanization. The pulling power of urbanization is analyzed according to two aspects, the agglomeration effect and the radiation effect of cities. The agglomeration effect provides continuous propelling force for urbanization, and the radiation effect further accelerates the urbanization process by pushing forward the development of rural economy. Of course, the slow development of urbanization can result in the hindrance to rural economic development.

关键词： agglomeration effect radiation effect pull of urbanization

Proton radiation effect of NPN-input operational amplifier under different bias conditions

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Journal of Semiconductors 2015年第12期36卷 114-118页

作者：姜柯陆妩郭旗何承发王信刘默寒李小龙 Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences Xinjiang Key Laboratory of Electronic Information Material and Device University of Chinese Academy of Sciences

NPN-input bipolar operational amplifiers LM741 were irradiated with ^60Coγ-ray, 3 MeV protons and10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with^60Coγ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current（±Icc）is another parameter that is sensitive to proton radiation,^60Coγ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of^60Coγ-ray, 3 MeV and 10 MeV proton irradiation.

关键词： NPN input bipolar operational amplifier proton radiation different biases radiation effect

Total Ionizing Dose radiation effects on MOS Transistors with Different Layouts

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Journal of Semiconductors 2007年第2期28卷 171-175页

作者：李冬梅皇甫丽英勾秋静王志华清华大学电子工程系北京100084 清华大学微电子学研究所北京100084

Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose （TID） radiation effects. The leakage current, threshold voltage shift, and transconductance of the devices are monitored before and after T-ray irradiation. Different device bias conditions are used during irradiation. The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures. The impact of the layout on TID effects on pMOS devices is slight and can be neglected.

关键词： MOS transistor layout total ionizing dose radiation effect

radiation-induced defects in different silicon (111) wafers by 400 keV electron irradiation

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Rare Metals 2012年第3期31卷 290-295页

作者： Gao, Hui Wang, Heyi Yuan, Yonggang Institute of Nuclear Physics and Chemistry China Academy of Engineering Physics Mianyang 621900 China

The energy deposition for low-energy electron beam on Si-SiO2 models was calculated by Monte-Carlo method. Making use of electron paramagnetic resonance (EPR) technique, an investigation of the effect of dopant type and concentration on EPR signal variations was carried out by using p-type and n-type silicon(111) wafers with concentration of 1×1015 cm 3 and 1×1017 cm 3, and the changes of intensity of defect paramagnetic centers before and after irradiation of electrons were compared. The chemical states of Si-SiO2 structure were determined by X-ray photoelectrons spectroscopy(XPS). The results clearly indicate that the effects of dopant variations (type and concentration) are of obvious difference. Compared with p-type silicon, n-type silicon, especially with higher dopant concentration, tends to produce defect at the interface under low-energy electron irradiation with certain flux, which arises from the hole trapped on a nonbridging oxygen atom bonded to P. It is represented in the form of distinct changes of POHC intensity and P2P spectrum. According to the theoretical and experimental data, the relationship among electron energy deposition, chemical states of element Si at SiO2 -Si(111) interface, and radiation effect were analyzed and discussed.

关键词： SiO2-Si(111) interface low-energy electron energy deposition XPS spectrum EPR spectrum radiation effect

effects of gamma-ray irradiation on electronic and non-electronic equipment of Large Helical Device

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Plasma Science and Technology 2017年第2期19卷 95-100页

作者： K OGAWA T NISHITANI M ISOBE M SATO M YOKOTA H HAYASHI T KOBUCHI T NISHIMURA National Institute for Fusion Science National Institutes of Natural Sciences322-6 0roshi-choToki 509-5292Japan SOKENDAI(The Graduate University for Advanced Studies) School of Physical Sciences322-6 Oroshi-choTold 509-5292Japan

In a deuterium operation on the Large Helical Device, the measurement and control equipment placed in the toms hall must survive under an environment of radiation, To study the effects of gamma-ray irradiation on the equipment, an irradiation experiment is performed at the Cobalt-60 irradiation facility of Nagoya University. Transient and permanent effects on a personal computer, media converters, programmable logic controllers, isolation amplifiers, a web camera, optical flow meters, and water sealing gaskets are experimentally surveyed. Transient noise appears on the web camera. Offset of the signal increases with an increase of the integrated dose on the programmable logic controller. The DeviceNet module on the programmable logic controller is broken at the integrated dose of 72 Gy, which is the expected range of the integrated dose of the toms hall. The other equipment can survive under the gamma-ray field in the toms hall.

关键词： large helical device gamma-ray irradiation radiation effect

A software solution to estimate the SEU-induced soft error rate for systems implemented on SRAM-based FPGAs

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Journal of Semiconductors 2011年第5期32卷 117-123页

作者：王忠明姚志斌郭红霞吕敏 Department of Engineering Physics Tsinghua University Northwest Institute of Nuclear Technology

SRAM-based FPGAs are very susceptible to radiation-induced Single-Event Upsets （SEUs） in space applications. The failure mechanism in FPGA＇s configuration memory differs from those in traditional memory device. As a result, there is a growing demand for methodologies which could quantitatively evaluate the impact of this effect. Fault injection appears to meet such requirement. In this paper, we propose a new methodology to analyze the soft errors in SRAM-based FPGAs. This method is based on in depth understanding of the device architecture and failure mechanisms induced by configuration upsets. The developed programs read in the placed and routed netlist, search for critical logic nodes and paths that may destroy the circuit topological structure, and then query a database storing the decoded relationship of the configurable resources and corresponding control bit to get the sensitive bits. Accelerator irradiation test and fault injection experiments were carried out to validate this approach.

关键词： radiation effect single-event effect SRAM-based FPGAs fault injection

Total Ionizing Dose effect and Failure Mechanism of Digital Signal Processor

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Chinese Journal of Electronics 2021年第5期30卷 986-990页

作者： YU Xin LU Wu LI Xiaolong LIU Mohan WANG Xin SUN Jing GUO Qi Xinjiang Technical Institute of Physics and Chemistry Laboratory of Solid State Radiation Physics

Ionizing radiation effect and failure mechanism of Digital signal processor(DSP) is studied through test-board and automatic test equipment to find the relationship between system function failure and parameter degradation. Static bias is more sensitive than dynamic bias when DSP is tested on-line during radiation. Core current, high-Z leakage current and timing parameter are sensitive to ionizing radiation. No enhanced low-dose-rate sensitivity is found by comparing experiment results under high and low dose rate *** memory interface and Timer are deduced to be the sensitive module by step radiation and analysis basing full parameter test in Verigy 93000. The timing parameter degradation have a strong correlation to these module functions. And the degeneration mechanism is analysed on inverter through Hspice simulation which indicate the leakage circuit caused by radiation can lead a delay to the digital signal propagating. The parasitical capacitance among long connections make it worse to the data transmission around DSP, field programmable gate array and memory. Then an early function failure occurs in test board than Verigy 93000. This work provide support to systematic radiation hardness design and hardness assurance/lot acceptance testing in space applications.

关键词： Reliability Logic circuits Semiconductor integrated circuit design, layout, modelling and testing CMOS integrated circuits Automatic test systems Other topics in statistics radiation effects (semiconductor technology) Digital signal processor radiation damage radiation effect

Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique

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Chinese Physics B 2017年第8期26卷 328-332页

作者：谭立英黎发军谢小龙周彦平马晶 National Key Laboratory of Tunable Laser Technology Harbin Institute of TechnologyHarbin 150001China

To gain a physical insight into the radiation effect on nanowires（NWs）, the time resolved photoluminescence（TRPL）technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10^（12） cm^（-2） to 3.0 × 10^（13） cm^（-2）. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall（SRH） recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.

关键词： radiation effect minority carrier lifetime defect concentration radiation damage