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quasi-two-dimensionalβ-Ga2O3 field effect transistors with large drain current density and low contact resistance via controlled formation of interfacial oxygen vacancies

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Nano Research 2019年第1期12卷 143-148页

作者： Zhen Li Yihang Liu Anyi Zhang Qingzhou Liu Chenfei Shen Fanqi Wu Chi Xu Mingrui Chen Hongyu Fu Chongwu Zhou Ming Hsieh Department of Electrical Engineering Mork Family Department of Chemical Engineering and Material ScienceDepartment of Physics and AstronomyUniversity of Southern CalifomiOy Los AngelesCalifornia 90089USA

quasi-two-dimensi on al(2D)β-Ga2O3 is a rediscovered metal-oxide semiconductor with an ultra-wide bandgap of *** has been reported to be a promising material for next-generation power and radio frequency *** effect transistors(FETs)that can switch at high voltage are key compone nts in power and radio frequency devices,and reliable Ohmic con tacts are essential for high FET ***,obtaining low contact resistance onβ-Ga2O3 FETs is difficult since reactions betweenβ-Ga2O3 and metal contacts are not fully ***,we experimentally demonstrate the importanee of reactions at the metal/β-Ga2O3 interface and the corresponding effects of these reactions on FET *** Ti is employed as the metal contact,annealing ofβ-Ga2O3 FETs in argon can effectively transform Schottky contacts into Ohmic contacts and permit a large drain current density of-3.1 mA//μ*** contact resistance(Rcontact)between the Ti electrodes andβ-Ga2O3 decreased from^430 to^0.387Ω·mm after annealing.X-ray photoelectron spectroscopy(XPS)confirmed the formation of oxygen vacancies at the Ti/β-Ga2O3 interface after annealing,which is believed to cause the improved FET *** results of this study pave the way for greater application ofβ-Ga2O3 in electronics.

关键词： quasi-two-dimensional material metal-oxides field effect transistor β-Ga2O3 contact resistanee

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基于准二维钙钛矿的高稳定电阻随机存储器

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Science China Materials 2024年第3期67卷 879-886页

作者：陈享潘孝鑫蒋博闻危家昀龙研汤杰李晓庆张军段金霞桃李马国坤王浩 Institute of Microelectronics and Integrated Circuits School of MicroelectronicsHubei UniversityWuhan 430062China Hubei Yangtze Memory Laboratories Wuhan 430205China

电阻式随机存储器(RRAM)一直被视为新兴存储器技术中具有挑战性的替代品.近年来,人们发现基于有机-无机杂化卤化物钙钛矿的RRAM具有优异的存储特性.本研究利用简单的一步旋涂策略,在空气中不使用反溶剂,制备出了具有准二维钙钛矿活性层... 详细信息

电阻式随机存储器(RRAM)一直被视为新兴存储器技术中具有挑战性的替代品.近年来,人们发现基于有机-无机杂化卤化物钙钛矿的RRAM具有优异的存储特性.本研究利用简单的一步旋涂策略,在空气中不使用反溶剂,制备出了具有准二维钙钛矿活性层的Al/(PEA)_(2)-MAPb_(2)I_(3)Br_(4)/SnO_(2)/氧化铟锡(ITO)非易失性RRAM,该器件表现出了出色且高度稳定的双极性电阻切换特性.此外,该器件表现出约为10~4的开/关比,低SET电压(约0.8 V),并且具有相对稳定的耐久性(大于1000次循环).高阻态和低阻态的传导机制分别是空间电荷限流传导和欧姆传导.此外,由于苯乙胺分子的疏水性,该器件在40%湿度下放置90天依然表现出显著的阻变特性.因此,这种高性能、稳定的RRAM为未来存储器的商业化提供了可能性.

关键词： resistive random access memory organic-inorganic hybrid quasi-two-dimensional high stability

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钾氨电子化合物中的准二维自旋-派尔斯相变

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Science Bulletin 2024年第8期69卷 1027-1036页

作者：丁驰鲁清郭照芃黄天衡王俊杰韩瑜邢定钰孙建 National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China

Electron-phonon interactions and electron-electron correlations represent two crucial facets of condensed matter *** instance,in a half-filled spin-1/2 anti-ferromagnetic chain,the lattice dimerization induced by electron-nucleus interaction can be intensified by onsite Coulomb repulsion,resulting in a spin-Peierls *** first-principles calculations and crystal structure prediction methods,we have identified that under mild pressures,potassium and ammonia can form stable compounds:R3m K(NH_(3))_(2),Pm3 m K(NH_(3))_(2),and Cm K_(2)(NH_(3))_(3).Our predictions suggest that the R3 m K(NH_(3))_(2)exhibits electride characteristics,marked by the formation of interstitial anionic electrons(IAEs)in the interlayer *** IAEs are arranged in quasi-two-dimensional triangular *** increasing pressure,the electronic van-Hove singularity shifts toward the Fermi level,resulting in an augmented density of states and the onset of both Peierls and magnetic *** these instabilities,we determine that the ground state of the R3 m K(NH_(3))_(2)is the dimerized P2_(1)/m phase with zigzag-type anti-ferromagnetic *** state can be described by the triangular-lattice antiferromagnetic Heisenberg model with modulated magnetic ***,we unveil the coexistence and positive interplay between magnetic and Peierls instability,constituting a scenario of spin-Peierls instability unprecedented in realistic 2D materials,particularly involving *** work provides valuable insights into the coupling of IAEs with the adjacent lattice and their spin correlations in quantum materials.

关键词： quasi-two-dimensional Interstitial anionic electrons Potassium ammonia compounds Spin-Peierls transition Antiferromagnetism

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