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Efficient and stable antimony sulfide planar thin film solar cells

Efficient and stable antimony sulfide planar thin film solar...

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第六届新型太阳能电池材料科学与技术学术研讨会

作者： Haisheng Song Hui Deng Shengjie Yuan Jiang Tang Wuhan National Laboratory for Optoelectronics (WNLO) Huazhong University of Science and Technology

Antimony chalcogenide has attracted great research interest very recently as a promising absorber material for thin film photovoltaics because of their unique optical and electrical properties, binary compound and easy synthesis. Firstly, SbS planar solar cells from evaporation method without hole-transport layer(HTM) assistance suffer from sulfur deficit vacancy and high back contact barrier. Thus we developed a post-surface selenization treatment to SbS thin film in order to improve the device performance. The treated HTM-free SbS based solar cells were fabricated and an improved efficiency of 4.17% was obtained. The obtained VOC of 0.714 V was the highest and the power conversion efficiency also reached the top value among HTM-free planar SbS solar cells. The back alloying could suppress the rear contact barrier to improve the fill factor and carrier extraction capability. Secondly, because of the one dimensional crystal structure, it is a big challenge to implement efficient doping. And the performance of reported thin film solar cells is limited by high resistivity and deep work function induced hole extraction barrier. Herein, we introduce a co-evaporation scheme for copper doping into SbS lattice. Cu-doped SbS thin film enhanced the crystallinity and conductivity along with improved carrier concentration. Simultaneously, the deep valance band obtained a minor upshift favoring the hole extraction. Consequently, all the photovoltaic parameters are improved and the power conversion efficiency was boost from 4.18% to 4.61%. Recently, we controlled the crystallization of buffer layer to induce vertical orientation SbS absorber overcoming interface defects and absorber transport loss. Such novel growth could pronouncedly improve the open-circuit voltage due to the superior interface quality and intra-ribbon transport. It was optimized by tuning the grain sizes to form strong light trapping effect, which further enhanced the short-circuit current density with 16% im

关键词： Sb2S3 solar cell quasi-epitaxy preferred orientation doping light trapping

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