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Single-electron pumping in a ZnO single-nanobelt quantum dot transistor

Science China(Physics,Mechanics & Astronomy) 2020年第6期63卷 97-104页

作者： Hassan Ali Jing Tang Kai Peng SiBai Sun Attia Falak FeiLong Song ShiYao Wu ChenJiang Qian Meng Wang XiTian Zhang Muhammad Aftab Rafiq XiuLai Xu Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Laboratory of quantum Engineering and quantum Metrology School of Physics and AstronomySun Yat-Sen University(Zhuhai Campus)Zhuhai 519082China National Center for Nanoscience and Technology Chinese Academy of SciencesBeijing 100190China Department of Physics University of the PunjabQuaid-e-Azam CampusLahore 54000Pakistan Key Laboratory for Photonic and Electronic Bandgap Materials Ministry of EducationSchool of Physics and Electronic EngineeringHarbin Normal UniversityHarbin 150025China Department of Physics and Applied Mathematics Pakistan Institute of Engineering and Applied SciencesIslambad 45650Pakistan CAS Center for Excellence in Topological quantum Computation School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

Diluted magnetic semiconductors(DMSs)have traditionally been employed to implement spin-based quantum computing and quantum information ***,their low Curie temperature is a major hurdle in their use in this field,which creates the necessity for wide bandgap DMSs operating at room *** view of this,a single-electron transistor(SET)with a global back-gate was built using a wide bandgap ZnO nanobelt(NB).Clear Coulomb oscillations were observed at 4.2 *** periodicity of the Coulomb diamonds indicates that the Coulomb oscillations arise from single quantum dots of uniform size,whereas quasi-periodic Coulomb diamonds correspond to the contribution of multi-dots present in the ZnO *** applying an AC signal to the global back-gate across a Coulomb peak with varying frequencies,single-electron pumping was observed;the increase in current was equal to the production of electron charge and *** current accuracy of about 1%for both single-and double-electron pumping was achieved at a high frequency of 25 *** accurate single-electron pumping makes the ZnO NB SET suitable for single-spin injection and detection,which has great potential for applications in quantum information technology.

关键词： ZnO nanobelt Coulomb blockade quantum dot transistor single-electron pumping

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