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Efficient quantum dot light-emitting diodes with ultra-homogeneous and highly ordered quantum dot monolayer

Science China Materials 2022年第3期65卷 757-763页

作者： Denglin Zhao Yueting Zheng Tingtao Meng Yangbin Zhu Jipeng Jing Xiang Chen Hongjin Gao Chaomin Mao Wenchen Zheng Hailong Hu Tailiang Guo Fushan Li Institute of Optoelectronic Technology Fuzhou UniversityFuzhou 350116China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350116China

Regarding conventional quantum dot lightemitting diodes(QLEDs)fabricated by using the spin-coating(SC)technique,voids and interstitial spaces are inevitable due to unordered quantum dots(QDs)stacking,generating device leakage current under an external *** the present study,we fabricated an ultra-homogeneous and highly ordered QD monolayer by adopting the Langmuir-Blodgett(LB)*** QD monolayer was transferred as a emissive layer with a horizontal lifting(HL)method to a red QLED,which exhibited high performance with an external quantum efficiency(EQE)of 19.0% and lifetime(T_(95)@100 cd m^(-2))of13,324 *** compared with the SC-based device,the EQE and lifetime were improved by 15% and 183% due to the compact and ordered QD monolayer that lowered the leakage ***,white QLEDs with stacked QD monolayers could be obtained at a low voltage of 4 V because LB technique is an organic-solvent-free approach avoiding interlayer mixing and controlling the QD layer thickness *** addition,we successfully fabricated an ultra-homogeneous large-area QD monolayer on a rectangular substrate with a size of 9 cm×5 cm,indicating the promising size scalability of the LB-HL strategy.

关键词： quantum dots Langmuir-Blodgett quantum dot light-emitting diodes

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High-resolution, full-color quantum dot light-emitting diode display fabricated via photolithography approach

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Nano Research 2020年第9期13卷 2485-2491页

作者： Wenhai Mei Zhenqi Zhang Aidi Zhang Dong Li Xiaoyuan Zhang Haowei Wang Zhuo Chen Yanzhao Li Xinguo Li Xiaoguang Xu BOE Technology Group Co. Ltd.Beijing 100176China School of Software&Microelectronics Department Peking UniversityBeijing 102600China

Displays play an extremely important role in modern information society,which creates a never-ending demand for the new and better products and *** latest requirements for novel display technologies focus on high resolution and high color *** emerging technologies that include organic light-emitting diode(OL ED),micro light-emiting diode(micro-LED),quantum dot light-emitting diode(QLED),laser display,holographic display and others,QLED is promising owing to its intrinsic high color gamut and the possibility to achieve high resolution with photolithography ***,previously demonstrated photolthography techniques suffer from reduced device performance and color Impurities in subpixels from the *** this study,we demonstrated a sacrificial layer assisted patterming(SLAP)approach,which can be applied in conjunction with photolithography to fabricate high-resolution,full-colo quantum dot(QD)*** this approach,the negative photoresist(PR)and sacrificial layer(SL)were uilized to determine the pixels for QD deposition,while at the same time the SL helps protect the QD layer and keep it intact(named PR-SL approach).To prove this method's viability for QLED display manufacture,a 500-ppi,full-color passive matrix(PM)-QLED prototype was fabricated via this *** show that there were no color impurities in the subpixels,and the PM-QL ED has a high color gamut of 114%National Television Standards Committee(NTSC).To the best of our knowledge,this is the first ull-olor QLED prototype with such a high *** anticipate that this innovative patteming technique will open a new horizon for future display technologies and may lead to a disruptive and innovative change in display industry.

关键词： quantum dots sacrificial layer assisted patterning quantum dot light-emitting diodes photolithography high-resolution

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