Thin film solarcells have been proved the next generation photovoltaic devices due to their low cost,less material consumption and easy mass *** them,micro-crystalline Si and Ge based thin film solarcells have advan...
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Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost,less material consumption and easy mass *** them,micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber *** individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific *** this work,w e designed a nd simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet,green,red as well as near infrared range,respectively.B y tuning the G e content,the record efficiency of 24.80%has been realized with the typical quadruple junction structure of a-Si:H/a-Si0.9Ge0.1:H/μc-Si:H/μc-Si0.5Ge0.5:*** further reduce the material cost,thickness dependent device performances have been *** can be found that the design of total thickness of 4μm is the optimal device design in balancing the thickness a nd the *** the design of ultrathin quadruple junction device with total thickness of 2μm is the optimized device design regarding cost and long-term stability with a little bit more reduction in *** results indicated that our solar cells combine the advantages of low cost and high *** work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.
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