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Bearing Capacity and Critical punch-through Depth of Spudcan on Sand Overlying Clay

China Ocean Engineering 2014年第1期28卷 139-147页

作者：刘君于龙周慧孔宪京 State Key Laboratory of Coastal and Offshore Engineering Dalian University of Technology

Spudcan may experience punch-through failure on strong over weak layered soils, such as sand overlying clay. A large deformation finite element method （LDFE） is used to simulate the penetration process of spudcan into sand overlying clay. The sand is simulated by smoothed hyperbolic Mohr-Coulomb model, and the clay is simulated by a simple elasto-plastic model which obeys Tresca yield criterion. According to the LDFE results of a large amount of cases, the effects of the strength, unit weight and thickness of the top sand layer, as well as the effect of the strength of the underlying clay on the spudcan punch-through behavior, are investigated. The critical depth occurring punch-through and the critical bearing capacity are presented in charts. Fitting equations to calculate the critical punch-through depth and the critical bearing capacity are proposed for the convenience of engineering practice.

关键词： spudcan foundation punch-through sand overlying clay double layer jack-up platform

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Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure

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Science China(Information Sciences) 2012年第4期55卷 962-970页

作者： WANG YongShun,FENG JingJing,LIU ChunJuan,WANG ZiTing,WANG ZaiXing & ZHANG CaiZhen School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China 1. School of Electronic and Information Engineering Lanzhou Jiaotong University Lanzhou 730070 China

The breakdown mechanism of power bipolar static induction transistor (BSIT) with buried gate structure is analyzed in depth.A power BSIT sample with high voltage-resistant capability has been designed and fabricated in this *** technological methods for improving high voltage performances are *** active region of BSIT is surrounded with a deep trench to avoid any probable influences of various defects on device *** field-limiting ring-shape junctions and one channel termination ring-shape junction are arranged around the gate region to reduce the electric field *** gate-source breakdown voltage BV GS of power BSIT has been increased to 110 V from previous value of 50-60 V,and its blocking voltage is increased to 1700 *** optimal geometrical dimensions for achieving the maximum breakdown voltage BV GS and blocking voltage V block are also represented in the paper.

关键词： bipolar static induction transistor voltage-resistant capability punch-through deep trench

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Electric and thermal conduction mechanisms of submicron-structured Ni-ZrO_2 composites

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Science China Mathematics 1995年第11期38卷 1377-1386页

作者：范秋林胡行方郭景坤 Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China

The experimental results indicate that the Ni-ZrO2 composites synthesized with urn-sized Ni powder and nm-sized ZrO2 powder possess submicron structure. Based on the fractal theory, the relationship between the electric and thermal conductance and the chemical composition of the composites has been studied. The results show that with the increase of the nickel content, the electric and thermal conductance of the composites varies. It is proposed that in the submicron structured composites, electrons and phonons have different transport mechanisms. The electric transport in the submicron-structured composites can be attributed to the medium punch-through effect and quantum tunnel punch-through effect of electrons and the low thermal conductance is due to the phonic scattering by the submicron-sized pores, grains and grain boundaries. The reason can also be used to explain why the thermal percolation threshold value lags behind the electric percolation value. The phenomenon has been observed.

关键词： submicron structure electronic punch-through effect phonic scattering abnormal resonance.

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