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Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature

Chinese Physics B 2021年第5期30卷 661-666页

作者： Yu Fu Rui-Min Xu Xin-Xin Yu Jian-Jun Zhou Yue-Chan Kong Tang-Sheng Chen Bo Yan Yan-Rong Li Zheng-Qiang Ma Yue-Hang Xu University of Electronic Science and Technology of China Chengdu 611731China Nanjing Electronic Devices institute Nanjing 210016China Sichuan University Chengdu 610041China University of Wisconsin-Madison MadisonWI 53705USA

The interface state of hydrogen-terminated(C-H)diamond metal-oxide-semiconductor field-effect transistor(MOSFET)is critical for device *** this paper,we investigate the fixed charges and interface trap states in C-H diamond MOSFETs by using different gate dielectric *** devices use Al_(2)O_(3) as gate dielectrics that are deposited via atomic layer deposition(ALD)at 80℃and 300℃,respectively,and their C-v and i-v characteristics are comparatively ***-Schottky plots(1/C2-vG)suggest that positive and negative fixed charges with low density of about 10^(11)cm^(-2) are located in the 80-℃-and 300-℃deposition Al2O3 films,*** analyses of direct current(DC)/pulsed i-v and frequency-dependent conductance show that the shallow interface traps(0.46 ev-0.52 ev and 0.53 ev-0.56 ev above the valence band of diamond for the 80-℃and 300-℃deposition conditions,respectively)with distinct density(7.8×10^(13)ev^(-1)·cm^(-2)-8.5×10^(13)ev^(-1)·cm^(-2) and 2.2×10^(13)ev^(-1)·cm^(-2)-5.1×10^(13)ev^(-1)·cm^(-2) for the 80-℃-and 300-℃-deposition conditions,respectively)are present at the Al2O3/C-H diamond *** pulsed i-v and capacitance dispersion results indicate that the ALD Al_(2)O_(3) technique with 300-℃deposition temperature has higher stability for C-H diamond MOSFETs.

关键词： diamond MOSFET ALD temperature pulsed i-v interface trap conductance method

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Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

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Journal of Semiconductors 2015年第7期36卷 83-89页

作者：林体元庞磊王鑫华黄森刘果果袁婷婷刘新宇 Key Laboratory of Microelectronics Devices & integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

An optimized modeling method of 8 ×100μm A1GaN/GaN-based high electron mobility transistor （HEMT） for accurate continuous wave （CW） and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage （l-v） measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at vgs = -3.5 v, vds = 30 v with a frequency of 9.6 GHz are presented.

关键词： A1GaN/GaN HEMT pulsed i-v trapping effect self-heating effect

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