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检索条件"主题词=porous SiC"
3 条 记 录,以下是1-10 订阅
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Spontaneous infiltration and wetting behaviors of a Zr-based alloy melt on a porous sic substrate
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International Journal of Minerals,Metallurgy and Materials 2018年 第7期25卷 817-823页
作者: Zhang Wen Li Hong Li Hai-feng Zhang School of Materials Science and Engineering Shenyang Aerospace UniversityShenyang 110136China School of Materials Science and Engineering Shenyang Ligong UniversityShenyang 110159China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China
The spontaaleous infiltration aald wetting behaviors of a Zr-based alloy melt on porous a sic ceramic plate were studied using tile sessile drop metilod by continuous heating and holding for 1800 s at different temper... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Dynamic indentation response of porous sic/Ti-based metallic glass composite
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Transactions of Nonferrous Metals Society of China 2016年 第12期26卷 3154-3160页
作者: Ben-peng WANG Lu WANG Yun-fei XUE Yang-wei WANG Hai-feng ZHANG Hua-meng FU School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China National Key Laboratory of Science and Technology on Materials under Shock and Impact Beijing 100081 China Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of Sciences Shenyang 110016 China
porous sic/Ti-based metallic glass composite (Ti-BMGC), a new kind of composite, has significant application prospectin the field of light armor. To evaluate the dynamic mechanical response of the composite, dynamic V... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Investigation on the Luminescent Properties of sic
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Semiconductor Photonics and Technology 2003年 第3期9卷 182-188页
作者: WANG Qiang, LI Yu-guo, SHI Li-wei, SHUN Hai-bo, XUE Cheng-shan (Institute of Semiconductor, Shandong Normal University, Jinan 250014,CHN) Institute of Semiconductor Shandong Normal University Jinan 250014
Silicon carbide (sic) is an excellent microelectronic material used to fabricate high frequency, high temperature,high power and non-volatile memory *** due to its indirect band gap,sic based LED cant emit light so ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论