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porous silicon biosensor for detection of variable domain of heavy-chain of HCAb antibody

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Optoelectronics Letters 2012年第2期8卷 81-83页

作者：张红燕吕小毅贾振红李江伟张富春 School of Physical Science and Technology Xinjiang University Postdoctoral Station of Computer Science and Technology Xinjiang University College of Information Science and Engineering Xinjiang University Key Laboratory of Xinjiang Biological Resources and Gene Engineering College of Life Sciences and TechnologyXinjiang University

In this paper, we produce porous silicon （PSi） by electrochemical etching, and it is the first time to evaluate the performance of label-free porous silicon biosensor for detection of variable domain of heavy chain of heavy-chain antibody （VHH）. The binding of hen egg white lysozyme （HEWL） and VHH causes a red shift in the reflection spectrum of the biosensor. The red shift is proportional to the VHH concenlration in the range from 14 ***-I to 30 ***~ with a detection limit of 0.648 ***~. The research is useful for the development of label-free biosensor applied in the rapid and sensitive determination of small molecules.

关键词： Antibodies Chemical detection Doppler effect porous silicon

Theoretical Study of Interaction Between S2 and SiHx （x=1, 2, 3） in porous silicon

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Chinese Journal of Chemical Physics 2010年第3期23卷 281-286,I0001页

作者：李佐程新路王江陈海花四川大学原子与分子物理研究所成都610065

The interaction between S2 molecule and SiHx （x=1, 2, 3） in porous silicon is investigated using the B3LYP method of density functional theory with the lanl2dz basis set. The model of porous silicon doped with CH3, Si-O-Si and OH species is built. By analyzing the binding energy and electronic transfer, we conclude that the interaction of S2 molecule with SiHx （x=1, 2, 3） is much stronger than the interaction of S2 molecule with CH3 and OH, as S2 molecule is located in different sites of the model. Using the transition state theory, we study the Si2H6＋S2→H3SiH2SiS＋HS reaction, and the reaction energy barrier is 50.2 kJ/mol, which indicates that the reaction is easy to occur.

关键词： porous silicon IR spectrum Binding energy Transition state

Graphene-encapsulated blackberry-like porous silicon nanospheres prepared by modest magnesiothermic reduction for high-performance lithium-ion battery anode

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Rare Metals 2021年第2期40卷 383-392页

作者： Ben Xiang Wei-Li An Ji-Jiang Fu Shi-Xiong Mei Si-Guang Guo Xu-Ming Zhang Biao Gao Paul K.Chu The State Key Laboratory of Refractories and Metallurgy Institute of Advanced Materials and NanotechnologyWuhan University of Science and TechnologyWuhan430081China BTR New Material Group Co. Ltd.Shenzhen518106China Department of Physics City University of Hong KongTat Chee AvenueKowloon999077Hong KongChina Department of Materials Science and Engineering City University of Hong KongTat Chee AvenueKowloon999077Hong KongChina Department of Biomedical Engineering City University of Hong KongTat Chee AvenueKowloon999077Hong KongChina

porous silicon(Si)nanostructures have aroused much interest as lithium-ion battery anodes because of the large space to accommodate the volume change in lithiation and delithiation and shorter ion transfer ***,fabrication of porous structures tends to be difficult to control and complex,so,the final electrochemical performance can be ***,a modest magnesiothermic reduction(MMR)reaction is demonstrated to produce blackberry-like porous Si nanospheres(PSSs)controllably using magnesium silicide(Mg_(2)Si)as Mg source and SiO_(2)nanospheres as the *** improved MR method provides good control of the kinetics and heat release compared to the traditional MR(TMR)method using Mg powder as the *** PSSs obtained by MMR reaction has higher structural integrity than that fabricated by *** encapsulation with reduced graphene oxide,the Si/C composite exhibits superior cycling stability and rates such as a high reversible capacity of 1034 mAh·g^(-1)at0.5 C(4200 mAh·g^(-1)at 1.0 C)after 1000 cycles,capacity retention of 79.5%,and high rate capacity of 497 mAh·g^(-1)at 2.0 *** strategy offers a new route to fabricate highperformance porous Si anodes and can be extended to other materials such as germanium.

关键词： porous silicon Graphene Anode Magnesiothermic reduction Lithium-ion battery

Photoluminescence Properties of porous silicon Based on FZ(H) Si Wafer

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Rare Metals 2001年第1期20卷 38-42,57页

作者： Yuejiao He, Huaixiang Li, Chenghua Guo, Guirong Liu, Yansheng Chen, Shuzhen Duan (Institute of Semiconductors, Shandong Normal University, Jinan 250014, China Metallurgy School, University of Science and Technology Beijing, Beijing 100083, China) 山东师范大学山东济南 250014 北京科技大学北京 100083

The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80-90 Omega .cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 mum formed by neutron transmutation doping (NTD) and thermal treatment at 940 degreesC for 4 h and then 700 degreesC for 2 h, two-step heating of the floating-zone silicon (FZ Si) grown in a hydrogen (H,) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak position from the PS can be qualitatively controlled factitiously. The as-prepared PS shows an orange-yellow luminescence, while the modified samples emit red, green and blue luminescence. Mechanisms for the different colors of the PL are discussed. Fourier transform infrared (FTIR) is carried out to analyze the differences in the structural configuration of the PS samples.

关键词： porous silicon photoluminescence surface modification rapid thermal oxidation

On-demand production of hydrogen by reacting porous silicon nanowires with water

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Nano Research 2020年第5期13卷 1459-1464页

作者： Rui Ning Yue Jiang Yitian Zeng Huaxin Gong Jiheng Zhao Jeffrey Weisse Xinjian Shi Thomas M.Gill Xiaolin Zheng Department of Materials Science and Engineering Stanford UniversityStanfordCA 94305USA Department of Mechanical Engineering Stanford UniversityStanfordCA 94305USA Department of Chemical Engineering Stanford UniversityStanfordCA 94305USA

On-demand hydrogen generation is desired for fuel cells,energy storage,and clean energy *** nanowires(SiNWs)and nanoparticles(SiNPs)have been reported to generate hydrogen by reacting with water,but these processes usually require external assistance,such as light,electricity or ***,we demonstrate that a porous SiNWs array,which is fabricated via the metal-assisted anodic etching(MAAE)method,reacts with water under ambient and dark conditions without any energy *** reaction between the SiNWs and water generates hydrogen at a rate that is about ten times faster than the reported rates of other Si *** possible sources of enhancement are discussed:SiNWs maintain their high specific surface area as they don’t agglomerate,and the intrinsic strain of the nanowires promotes the ***,the porous SiNWs array is portable,reusable,and environmentally friendly,yielding a promising route to produce hydrogen in a distributed manner.

关键词： silicon nanowire porous silicon hydrogen generation metal-assisted anodic etching metal-assisted chemical etching water splitting

Plasmonic characteristics of suspended graphene-coated wedge porous silicon nanowires with Ag partition

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Chinese Physics B 2021年第1期30卷 267-274页

作者： Xu Wang Jue Wang Tao Ma Heng Liu Fang Wang College of Electronic and Electrical Engineering Henan Normal UniversityXinxiang 453007China Henan Key Laboratory of Optoelectronic Sensing Integrated Application Xinxiang 453007China Academician Workstation of Electromagnetic Wave Engineering of Henan Province Xinxiang 453007China

We investigate a graphene-coated nanowire waveguide(GCNW) composed of two suspended wedge porous silicon nanowires and a thin Ag partition. The plasmonic characteristics of the proposed structure in terahertz(THz) frequency band are simulated by the finite element method(FEM). The parameters including the gap between the nanowires and Ag partition, the height of the nanowire, the thickness of the Ag partition, and the Fermi level of graphene, are optimized. The simulation results show that a normalized mode field area of ~10-4 and a figure of merit of ~100 can be achieved. Compared with the cylindrical GCNW and isolated GCNW, the proposed wedge GCNW has good electric field enhancement.A waveguide sensitivity of 32.28 is obtained, which indicates the prospects of application in refractive index(RI) sensing in THz frequency band. Due to the adjustable plasmonic characteristics by changing the Fermi level(EF), the proposed structure has promising applications in the electro-optic modulations, optical interconnects, and optical switches.

关键词： surface plasmon polariton graphene porous silicon finite element method(FEM)

Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

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Journal of Semiconductors 2011年第5期32卷 149-152页

作者：欧伟英赵雷刁宏伟张俊王文静 Key Laboratory of Solar Thermal Energy and Photovoltaic System Institute of Electrical EngineeringChinese Academy of Sciences

porous silicon （PS） layers were formed on textured crystalline silicon by electrochemical etching in HF- based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance. The longer the anodizing time is, the lower the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range. A minimum reflectance of 3.86% at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.

关键词： texture porous silicon anti-reflectance coating solar cell

Light transmission in porous silicon dioxide filled with liquids of different refractive indices

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Chinese Optics Letters 2011年第6期9卷 94-96页

作者：李俊张心正石凡徐燕王丕东禹宣伊许京军 The MOE Key Laboratory of Weak Light Nonlinear Photonics TEDA Applied Physics School and School of Physics Nankai University

Optical transmission at 532 nm from nonabsorbing disordered porous silicon dioxide has been studied experimentally. The transmission behaviors can be adjusted by filling the pores with liquids of different refractive indics, which are analyzed based on the theory of diffusion in a weak scattering regime. In our experiment, the transmission coefficient changes from a value less than 1% to one that is greater than 75%, that is, the opaque sample becomes transparent, which means that the transport mean free path of light within the material has been effectively adjusted. In addition, this method is a useful nondestructive method to derive the refractive index of an unknown bulk porous material.

关键词： Light refraction porous materials porous silicon Refractive index Refractometers Silica

Preparation and room temperature NO_2-sensing performances of porous silicon/V_2O_5nanorods

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Chinese Physics B 2016年第4期25卷 85-91页

作者：闫文君胡明梁继然王登峰魏玉龙秦玉香 School of Electronics and Information Engineering Tianjin University

In this paper, porous silicon/V205 nanorod composites are prepared by a heating process of as-sputtered V film on porous silicon （PS） at 600 ℃ for different times （15, 30, and 45 min） in air. The morphologies and crystal structures of the samples are investigated by field emission scanning electron microscope （FESEM）, x-ray diffractometer （XRD）, x-ray photoelectron spectroscopy （XPS）, and Raman spectrum （RS）. An improved understanding of the growth process of V205 nanorods on PS is presented. The gas sensing properties of samples are measured for NO2 gas of 0.25 ppm-3 ppm at 25 ℃. We investigate the effects of the annealing time on the NO2-sensing performances of the samples. The sample obtained at 600 ℃ for 30 min exhibits a very strong response and fast response-recovery rate to ppm level NO2, indicating a p-type semiconducting behavior. The XPS analysis reveals that the heating process for 30 rain produces the biggest number of oxygen vacancies in the nanorods, which is highly beneficial to gas sensing. The significant NO2 sensing performance of the sample obtained at 600 ℃ for 30 rain probably is due to the strong amplification effect of the heterojunction between PS and V205 and a large number of oxygen vacancies in the nanorods.

关键词： V205 nanorods porous silicon heterojunction NO2-sensing